arXiv subjects

J. Meijer

Publications and source records attributed to J. Meijer.

36 records · Page 2Linked to original sources

arXiv2015

Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.

cond-mat.mtrl-sci↗

arXiv2015

Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond

We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analysis reveals a double-Lorentzian noise spectra consistent with a surface electronic spin bath, with slower dynamics due to spin-spin interactions and faster dynamics related to phononic coupling. These results shed new light on the mechanisms responsible for surface noise affecting shallow spins at semiconductor interfaces, and suggests possible directions for further studies. We demonstrate dynamical decoupling from the surface noise, paving the way to applications ranging from nanoscale NMR to quantum networks.

quant-ph↗

arXiv2014

Temperature dependent creation of nitrogen-vacancy centers in CVD diamond layers

In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy (NV-) centers. This luminescent defect possesses specific physical characteristics that make it suitable as an addressable solid-state electron spin for measuring magnetic fields with unprecedented sensitivity. To this aim, a relatively large number of NV- centers (> 10^12 cm^-3) should ideally be located in a thin diamond layer (a few tens of nm) close to the surface which is particularly challenging to achieve with the PACVD technique. Here we show that intentional temperature variations can be exploited to tune NV- creation efficiency during growth, allowing engineering complex stacking structures with a variable doping. Because such a temperature variation can be performed quickly and without any change of the gas phase composition, thin layers can be grown. Measurements show that despite the temperature variations, the luminescent centers incorporated using this technique exhibit spin coherence properties similar to those reached in ultra-pure bulk crystals, which suggests that they could be successfully employed in magnetometry applications.

cond-mat.mtrl-sci↗

arXiv2014

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

cond-mat.mes-hall↗

arXiv2014

Nanoscale nuclear magnetic resonance with a 1.9-nm-deep nitrogen-vacancy sensor

We present nanoscale NMR measurements performed with nitrogen-vacancy (NV) centers located down to about 2 nm from the diamond surface. NV centers were created by shallow ion implantation followed by a slow, nanometer-by-nanometer removal of diamond material using oxidative etching in air. The close proximity of NV centers to the surface yielded large 1H NMR signals of up to 3.4 uT-rms, corresponding to ~330 statistically polarized or ~10 fully polarized proton spins in a ~(1.8 nm)^3 detection volume.

cond-mat.mes-hall↗

arXiv2012

Spin Properties of Very Shallow Nitrogen Vacancy Defects in Diamond

We investigate spin and optical properties of individual nitrogen-vacancy centers located within 1-10 nm from the diamond surface. We observe stable defects with a characteristic optically detected magnetic resonance spectrum down to lowest depth. We also find a small, but systematic spectral broadening for defects shallower than about 2 nm. This broadening is consistent with the presence of a surface paramagnetic impurity layer [Tisler et al., ACS Nano 3, 1959 (2009)] largely decoupled by motional averaging. The observation of stable and well-behaved defects very close to the surface is critical for single-spin sensors and devices requiring nanometer proximity to the target.

cond-mat.mes-hall↗

arXiv2011

Nano-fabricated solid immersion lenses registered to single emitters in diamond

We describe a technique for fabricating micro- and nano-structures incorporating fluorescent defects in diamond with a positional accuracy in the hundreds of nanometers. Using confocal fluorescence microscopy and focused ion beam (FIB) etching we first locate a suitable defect with respect to registration marks on the diamond surface and then etch a structure using these coordinates. We demonstrate the technique here by etching an 8 micron diameter hemisphere positioned such that a single negatively charged nitrogen-vacancy defect lies at its origin. This type of structure increases the photon collection efficiency by removing refraction and aberration losses at the diamond-air interface. We make a direct comparison of the fluorescence photon count rate before and after fabrication and observe an 8-fold increase due to the presence of the hemisphere.

quant-ph↗

arXiv2010

Chemical control of the charge state of nitrogen-vacancy centers in diamond

We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the dissappearance of NV- in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer leads to a depletion of electrons in the nitrogen vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way for the control of the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to an electrostatic control of the charge state with the use of an external gate electrode.

cond-mat.mtrl-sci↗

arXiv2010

The 198Au beta-half-life in the metal Au revisited

The half-life of the beta-decay of 198Au has been measured for room temperature and 12 K. The resulting values of T(RT) = 2.684 +- 0.004 d and T(12 K) = 2.687 +- 0.005 d agree well within statistical uncertainties. An evidence for a temperature dependence of the half-life was not observed.

nucl-ex↗

arXiv2010

Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures

We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a PMMA layer deposited on a diamond surface. The implantation was performed with CN- molecules which increased the NV defect formation yield. This method could enable the realization of a solid-state coupled-spin array and could be used for positioning an optically active NV center on a photonic microstructure.

quant-ph↗

arXiv2010

Scalable quantum register based on coupled electron spins in a room temperature solid

Realization of devices based on quantum laws might lead to building processors that outperform their classical analogues and establishing unconditionally secure communication protocols. Solids do usually present a serious challenge to quantum coherence. However, owing to their spin-free lattice and low spin orbit coupling, carbon materials and particularly diamond are suitable for hosting robust solid state quantum registers. We show that scalable quantum logic elements can be realized by exploring long range magnetic dipolar coupling between individually addressable single electron spins associated with separate color centers in diamond. Strong distance dependence of coupling was used to characterize the separation of single qubits 98 A with unprecedented accuracy (3 A) close to a crystal lattice spacing. Our demonstration of coherent control over both electron spins, conditional dynamics, selective readout as well as switchable interaction, opens the way towards a room temperature solid state scalable quantum register. Since both electron spins are optically addressable, this solid state quantum device operating at ambient conditions provides a degree of control that is currently available only for atomic systems.

quant-ph↗

arXiv2009

Dynamic polarization of single nuclear spins by optical pumping of NV color centers in diamond at room temperature

We report a versatile method to efficiently polarize single nuclear spins in diamond, which is based on optical pumping of a single NV color center and mediated by a level-anti crossing in its excited state. A nuclear spin polarization higher than 98% is achieved at room temperature for the 15N nuclear spin associated to the NV center, corresponding to $μ$K effective nuclear spin temperature. We then show simultaneous deterministic initialization of two nuclear spins (13C and 15N) in close vicinity to a NV defect. Such robust control of nuclear spin states is a key ingredient for further scaling up of nuclear-spin based quantum registers in diamond.

quant-ph↗

arXiv2009

Deterministic Ultracold Ion Source targeting the Heisenberg Limit

The major challenges to fabricate quantum processors and future nano solid state devices are material modification techniques with nanometre resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a segmented ion trap with mK laser cooled ions we have realized a deterministic single ion source which could operate with a huge range of sympathetically cooled ion species, isotopes or ionic molecules. We have deterministically extracted a predetermined number of ions on demand and have measured a longitudinal velocity uncertainty of 6.3m/s and a spatial beam divergence of 0.6 mrad. We show in numerical simulations that if the ions are cooled to the motional ground state (Heisenberg limit) nanometre spatial resolution can be achieved.

quant-ph↗

arXiv2008

A parameter study of self-consistent disk models around Herbig AeBe stars

We present a parameter study of self-consistent models of protoplanetary disks around Herbig AeBe stars. We use the code developed by Dullemond and Dominik, which solves the 2D radiative transfer problem including an iteration for the vertical hydrostatic structure of the disk. This grid of models will be used for several studies on disk emission and mineralogy in followup papers. In this paper we take a first look on the new models, compare them with previous modeling attempts and focus on the effects of various parameters on the overall structure of the SED that leads to the classification of Herbig AeBe stars into two groups, with a flaring (group I) or self-shadowed (group II) SED. We find that the parameter of overriding importance to the SED is the total mass in grains smaller than 25um, confirming the earlier results by Dullemond and Dominik. All other parameters studied have only minor influences, and will alter the SED type only in borderline cases. We find that there is no natural dichotomy between group I and II. From a modeling point of view, the transition is a continuous function of the small dust mass. We also show that moderate grain growth produces spectra with weak or no 1um feature, both for flaring (Group I) and non-flaring (Group II) sources. The fact that sources with weak features have been found mostly in Group I sources is therefore surprising and must be due to observational biases or evolutionary effects.

astro-ph↗

arXiv2006

Room temperature coherent control of coupled single spins in solid

Coherent coupling between single quantum objects is at the heart of modern quantum physics. When coupling is strong enough to prevail over decoherence, it can be used for the engineering of correlated quantum states. Especially for solid-state systems, control of quantum correlations has attracted widespread attention because of applications in quantum computing. Such coherent coupling has been demonstrated in a variety of systems at low temperature1, 2. Of all quantum systems, spins are potentially the most important, because they offer very long phase memories, sometimes even at room temperature. Although precise control of spins is well established in conventional magnetic resonance3, 4, existing techniques usually do not allow the readout of single spins because of limited sensitivity. In this paper, we explore dipolar magnetic coupling between two single defects in diamond (nitrogen-vacancy and nitrogen) using optical readout of the single nitrogen-vacancy spin states. Long phase memory combined with a defect separation of a few lattice spacings allow us to explore the strong magnetic coupling regime. As the two-defect system was well-isolated from other defects, the long phase memory times of the single spins was not diminished, despite the fact that dipolar interactions are usually seen as undesirable sources of decoherence. A coherent superposition of spin pair quantum states was achieved. The dipolar coupling was used to transfer spin polarisation from a nitrogen-vacancy centre spin to a nitrogen spin, with optical pumping of a nitrogen-vacancy centre leading to efficient initialisation. At the level anticrossing efficient nuclear spin polarisation was achieved. Our results demonstrate an important step towards controlled spin coupling and multi-particle entanglement in the solid state.

quant-ph↗

arXiv2006

Concept of deterministic single ion doping with sub-nm spatial resolution

We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all hemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electric devices.

cond-mat.mtrl-sci↗

arXiv2005

Generation of single colour centers by focussed nitrogen implantation

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the nitrogen-vacancy colour center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average two 2 MeV nitrogen atoms need to be implanted per defect center.

cond-mat.mtrl-sci↗

arXiv2002

Single Ion Implantation for Solid State Quantum Computer Development

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficieny. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10keV), single ion implantation scheme for 31P(q+) ions. When 31P(q+) ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

cond-mat↗