arXiv subjects

Jaesung Son

Publications and source records attributed to Jaesung Son.

12 recordsLinked to original sources

arXiv2022

Efficient Estimation in Tensor Ising Models

The tensor Ising model is a discrete exponential family used for modeling binary data on networks with not just pairwise, but higher-order dependencies. A particularly important class of tensor Ising models are the tensor Curie-Weiss models, where all tuples of nodes of a particular order interact with the same intensity. The maximum likelihood estimator (MLE) is not explicit in this model, due to the presence of an intractable normalizing constant in the likelihood, and a computationally efficient alternative is to use the maximum pseudolikelihood estimator (MPLE). In this paper, we show that the MPLE is in fact as efficient as the MLE (in the Bahadur sense) in the $2$-spin model, and for all values of the null parameter above $\log 2$ in higher-order tensor models. Even if the null parameter happens to lie within the very small window between the threshold and $\log 2$, they are equally efficient unless the alternative parameter is large. Therefore, not only is the MPLE computationally preferable to the MLE, but also theoretically as efficient as the MLE over most of the parameter space. Our results extend to the more general class of Erdős-Rényi hypergraph Ising models, under slight sparsities too.

math.ST↗

arXiv2022

Phase Transitions of the Maximum Likelihood Estimates in the $p$-Spin Curie-Weiss Model

In this paper we consider the problem of parameter estimation in the $p$-spin Curie-Weiss model, for $p \geq 3$. We provide a complete description of the limiting properties of the maximum likelihood (ML) estimates of the inverse temperature and the magnetic field given a single realization from the $p$-spin Curie-Weiss model, complementing the well-known results in the 2-spin case (Comets and Gidas (1991)). Our results unearth various new phase transitions and surprising limit theorems, such as the existence of a 'critical' curve in the parameter space, where the limiting distribution of the ML estimates is a mixture with both continuous and discrete components. The number of mixture components is either two or three, depending on, among other things, the sign of one of the parameters and the parity of $p$. Another interesting revelation is the existence of certain 'special' points in the parameter space where the ML estimates exhibit a superefficiency phenomenon, converging to a non-Gaussian limiting distribution at rate $N^{\frac{3}{4}}$. Using these results we can obtain asymptotically valid confidence intervals for the inverse temperature and the magnetic field at all points in the parameter space where consistent estimation is possible.

math.ST↗

arXiv2020

Estimation in Tensor Ising Models

The $p$-tensor Ising model is a one-parameter discrete exponential family for modeling dependent binary data, where the sufficient statistic is a multi-linear form of degree $p \geq 2$. This is a natural generalization of the matrix Ising model, that provides a convenient mathematical framework for capturing higher-order dependencies in complex relational data. In this paper, we consider the problem of estimating the natural parameter of the $p$-tensor Ising model given a single sample from the distribution on $N$ nodes. Our estimate is based on the maximum pseudo-likelihood (MPL) method, which provides a computationally efficient algorithm for estimating the parameter that avoids computing the intractable partition function. We derive general conditions under which the MPL estimate is $\sqrt N$-consistent, that is, it converges to the true parameter at rate $1/\sqrt N$. In particular, we show the $\sqrt N$-consistency of the MPL estimate in the $p$-spin Sherrington-Kirkpatrick (SK) model, spin systems on general $p$-uniform hypergraphs, and Ising models on the hypergraph stochastic block model (HSBM). In fact, for the HSBM we pin down the exact location of the phase transition threshold, which is determined by the positivity of a certain mean-field variational problem, such that above this threshold the MPL estimate is $\sqrt N$-consistent, while below the threshold no estimator is consistent. Finally, we derive the precise fluctuations of the MPL estimate in the special case of the $p$-tensor Curie-Weiss model. An interesting consequence of our results is that the MPL estimate in the Curie-Weiss model saturates the Cramer-Rao lower bound at all points above the estimation threshold, that is, the MPL estimate incurs no loss in asymptotic efficiency, even though it is obtained by minimizing only an approximation of the true likelihood function for computational tractability.

math.ST↗

arXiv2017

Oscillatory spin-orbit torque switching induced by field-like torques

Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory switching in incoherent SOT process by controlling domain wall dynamics. We find that a large field-like component can dynamically influence the domain wall chirality which determines the direction of SOT switching. Consequently, under nanosecond current pulses, the magnetization switches alternatively between the two stable states. By utilizing this oscillatory switching behavior we demonstrate a unipolar deterministic SOT switching scheme by controlling the current pulse duration.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection

Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so that the efficient SOT switching requires to understand combined effects of the two torque-components. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted with considering the damping-like torque only. Here we report a decreased switching probability at longer pulse-widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection is found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in the deterministic SOT switching and notifies the importance of sign correlation of the two torque-components, which may shed light on the SOT switching mechanism.

cond-mat.mtrl-sci↗

arXiv2016

Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light

Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

cond-mat.mtrl-sci↗

arXiv2015

Graphene terahertz modulators by ionic liquid gating

Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

physics.optics↗

arXiv2015

Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2

Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance in the topological insulator BiSbTeSe2, at temperatures below 50 K. Our analysis shows that the negative magnetoresistance originates from an increase in the density of defect states created by introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative magnetoresistance contribution with increasing temperature and a robustness of the topological surface states to external disorder.

cond-mat.mes-hall↗

arXiv2014

Observation of inverse spin Hall effect in bismuth selenide

Bismuth Selenide (Bi2Se3) is a topological insulator exhibiting helical spin polarization and strong spin-orbit coupling. The spin-orbit coupling links the charge current to spin current via the spin Hall effect (SHE). We demonstrate a Bi2Se3 spin detector by injecting the pure spin current from a magnetic permalloy layer to a Bi2Se3 thin film and detect the inverse SHE in Bi2Se3. The spin Hall angle of Bi2Se3 is found to be 0.0093 and the spin diffusion length in Bi2Se3 to be 6.2 nm at room temperature. Our results suggest that topological insulators with strong spin-orbit coupling can be used in functional spintronic devices.

cond-mat.mtrl-sci↗

arXiv2013

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

cond-mat.mtrl-sci↗

arXiv2012

Shifting of surface plasmon resonance due to electromagnetic coupling between graphene and Au nanoparticles

Shifting of the surface plasmon resonance wavelength induced by the variation of the thickness of insulating spacer between single layer graphene and Au nanoparticles is studied. The system demonstrates a blue shift of 29 nm as the thickness of the spacer layer increases from 0 to 15 nm. This is due to the electromagnetic coupling between the localized surface plasmons excited in the nanoparticles and the graphene film. The strength of the coupling decays exponentially with a decay length of d/R=0.36, where d is the spacer layer thickness and R is the diameter of the Au nanoparticles. The result agrees qualitatively well with the plasmon ruler equation. Interestingly, a further increment of the spacer layer thickness induces a red shift of 17 nm in the resonance wavelength and the shift saturates when the thickness of the spacer layer increases above 20 nm.

cond-mat.mtrl-sci↗

arXiv2011

Tunneling characteristics of graphene

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.

cond-mat.mes-hall↗