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arXiv · 1311.2688

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Jaesung Son·Karan Banerjee·Matthew Brahlek·Nikesh Koirala·Seoung-Ki Lee·Jong-Hyun Ahn·Seongshik Oh·Hyunsoo Yang
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Abstract

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

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Jaesung Son, Karan Banerjee, Matthew Brahlek, Nikesh Koirala, Seoung-Ki Lee, Jong-Hyun Ahn, Seongshik Oh, Hyunsoo Yang. 2013-11-12. Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating. https://doi.org/10.1063/1.4833315

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