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arXiv · 1704.03482

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J. A. Beukman·Folkert K. de Vries·Jasper van Veen·Rafal Skolasinski·Michael Wimmer·Fanming Qu·David T. de Vries·Binh-Minh Nguyen·Wei Yi·Andrey A. Kiselev·Marko Sokolich·Michael J. Manfra·Fabrizio Nichele·Charles M. Marcus·Leo P. Kouwenhoven
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Abstract

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.

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Arjan J. A. Beukman, Folkert K. de Vries, Jasper van Veen, Rafal Skolasinski, Michael Wimmer, Fanming Qu, David T. de Vries, Binh-Minh Nguyen, Wei Yi, Andrey A. Kiselev, Marko Sokolich, Michael J. Manfra, Fabrizio Nichele, Charles M. Marcus, Leo P. Kouwenhoven. 2017-04-11. Spin-orbit interaction in a dual gated InAs/GaSb quantum well. https://doi.org/10.1103/physrevb.96.241401

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