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Jung-Woo Lee

Publications and source records attributed to Jung-Woo Lee.

At least 19 recordsLinked to original sources

Selective Perception for Robot: Task-Aware Attention in Multimodal VLA

In robotics, Vision-Language-Action (VLA) models that integrate diverse multimodal signals from multi-view inputs have emerged as an effective approach. However, most prior work adopts static fusion that processes all visual inputs uniformly, which incurs unnecessary computational overhead and allows task-irrelevant background information to act as noise. Inspired by the principles of human active perception, we propose a dynamic information fusion framework designed to maximize the efficiency and robustness of VLA models. Our approach introduces a lightweight adaptive routing architecture that analyzes the current text prompt and observations from a wrist-mounted camera in real-time to predict the task-relevance of multiple camera views. By conditionally attenuating computations for views with low informational utility and selectively providing only essential visual features to the policy network, Our framework achieves computation efficiency proportional to task relevance. Furthermore, to efficiently secure large-scale annotation data for router training, we established an automated labeling pipeline utilizing Vision-Language Models (VLMs) to minimize data collection and annotation costs. Experimental results in real-world robotic manipulation scenarios demonstrate that the proposed approach achieves significant improvements in both inference efficiency and control performance compared to existing VLA models, validating the effectiveness and practicality of dynamic information fusion in resource-constrained, real-time robot control environments.

cs.RO

Metal-organic Pulsed Laser Deposition for Complex Oxide Heterostructures

Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis technique for the precise manipulation of these defects, using LaAlO3/SrTiO3 (LAO/STO) as a model system. By employing titanium tetraisopropoxide (TTIP) as the titanium precursor, MOPLD achieves refined stoichiometric control in STO layers while preserving their structural integrity, as confirmed by X-ray diffraction and Raman spectroscopy. Depth-resolved cathodoluminescence spectroscopy and density functional theory calculations reveal that increasing TTIP flux during STO growth enhances the [TiSr]/[VSr] ratio and reduces the [VO] concentration. These defect modifications lead to a significant improvement in the low-temperature mobility of the two-dimensional electron gas at the LAO/STO interface, evidenced by distinct Shubnikov-de Haas oscillations. This work underscores the potential of MOPLD to advance defect engineering in complex oxide heterostructures, opening new avenues for quantum material research.

cond-mat.mtrl-sci

Electronic-grade epitaxial (111) KTaO3 heterostructures

KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.

cond-mat.mtrl-sci

Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography

We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.

cond-mat.mes-hall

One-dimensional Kronig-Penney superlattices at the LaAlO$_3$/SrTiO$_3$ interface

The paradigm of electrons interacting with a periodic lattice potential is central to solid-state physics. Semiconductor heterostructures and ultracold neutral atomic lattices capture many of the essential properties of 1D electronic systems. However, fully one-dimensional superlattices are highly challenging to fabricate in the solid state due to the inherently small length scales involved. Conductive atomic-force microscope (c-AFM) lithography has recently been demonstrated to create ballistic few-mode electron waveguides with highly quantized conductance and strongly attractive electron-electron interactions. Here we show that artificial Kronig-Penney-like superlattice potentials can be imposed on such waveguides, introducing a new superlattice spacing that can be made comparable to the mean separation between electrons. The imposed superlattice potential "fractures" the electronic subbands into a manifold of new subbands with magnetically-tunable fractional conductance (in units of $e^2/h$). The lowest $G=2e^2/h$ plateau, associated with ballistic transport of spin-singlet electron pairs, is stable against de-pairing up to the highest magnetic fields explored ($|B|=16$ T). A 1D model of the system suggests that an engineered spin-orbit interaction in the superlattice contributes to the enhanced pairing observed in the devices. These findings represent an important advance in the ability to design new families of quantum materials with emergent properties, and mark a milestone in the development of a solid-state 1D quantum simulation platform.

cond-mat.str-el

Engineered spin-orbit interactions in LaAlO$_3$/SrTiO$_3$-based 1D serpentine electron waveguides

The quest to understand, design, and synthesize new forms of quantum matter guides much of contemporary research in condensed matter physics. One-dimensional (1D) electronic systems form the basis for some of the most interesting and exotic phases of quantum matter. The variety of experimentally-accessible ballistic 1D electronic systems is highly restricted, and furthermore these systems typically have few tuning parameters other than electric and magnetic fields. However, electron waveguides formed from two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ heterointerfaces exhibit remarkable 1D properties, including ballistic multi-mode transport and strong attractive electron-electron interaction, but these systems conspicuously lack strong or tunable spin-orbit interactions. Here we describe a new class of quasi-1D nanostructures, based on LaAlO$_3$/SrTiO$_3$ electron waveguides, in which a sinusoidal transverse spatial modulation is imposed. Nanowires created with this "serpentine" modulation display unique dispersive features in the subband spectra, namely (1) a significant shift ($\sim$ 7 tesla) in the spin-dependent subband minima, and (2) fractional conductance plateaus, some of which are continuously tunable with a magnetic field. The first property can be understood as an engineered spin-orbit interaction associated with the periodic acceleration of electrons as they undulate through the nanowire (ballistically), while the second property signifies the presence of enhanced electron-electron scattering in this system due to the imposed periodic structure. The ability to engineer these interactions in quantum wires contributes to the tool set of a 1D solid-state quantum simulation platform.

cond-mat.str-el

Frictional drag between superconducting LaAlO$_3$/SrTiO$_3$ nanowires

We report frictional drag measurements between two superconducting LaAlO$_3$/SrTiO$_3$ nanowires. In these experiments, current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. The frictional drag signal contains both symmetric and antisymmetric components. The antisymmetric component arises from the rectification of quantum shot noise in the drive nanowire by the broken symmetry in the drag nanowire. The symmetric component in the drag resistance is ascribed to rectification of thermal noise in the drive nanowire during superconducting-normal transition. The suppression of the symmetric component is observed when a normal nanowire is used as either a drag or drive nanowire with the other nanowire superconducting. The absence of symmetric drag resistance between a normal drag nanowire and a superconducting drive nanowire suggests a higher electron-hole asymmetry in the superconducting LaAlO$_3$/SrTiO$_3$ nanowire arising from the 1D nature of superconductivity at LaAlO$_3$/SrTiO$_3$ interface.

cond-mat.mes-hall

Gate-Tunable Optical Nonlinearities and Extinction in Graphene/LaAlO$_3$/SrTiO$_3$ Nanostructures

Pristine, undoped graphene has a constant absorption of 2.3 % across the visible to near-infrared (VIS-NIR) region of the electromagnetic spectrum. Under certain conditions, such as nanostructuring and intense gating, graphene can interact more robustly with VIS-NIR light and exhibit a large nonlinear optical response. Here, we explore the optical properties of graphene/LaAlO$_3$/SrTiO$_3$ nanostructures, where nanojunctions formed at the LaAlO$_3$/SrTiO$_3$ interface enable large (~10$^8$ V/m) electric fields to be applied to graphene over a scale of ~10 nm. Upon illumination with ultrafast VIS-NIR light, graphene/LaAlO$_3$/SrTiO$_3$ nanostructures produce broadband THz emission as well as a sum-frequency generated (SFG) response. Strong spectrally sharp, gate-tunable extinction features (>99.99%) are observed in both the VIS-NIR and SFG regions alongside significant intensification of the nonlinear response. The observed gate-tunable strong graphene-light interaction and nonlinear optical response are of fundamental interest and open the way for future exploitation in graphene-based optical devices.

cond-mat.mes-hall

Strong Aharonov-Bohm quantum interference in simply-connected LaAlO$_3$/SrTiO$_3$ structures

We report Aharonov-Bohm (AB)-type quantum interference in simply-connected devices created at the LaAlO$_3$/SrTiO$_3$ interface using conductive-atomic force microscope (c-AFM) lithography. The oscillations are multi-periodic functions of magnetic field strength, and they exhibit a substantial magnetic hysteresis with frequencies that depends on the magnetic sweep direction. The oscillation amplitude for the lowest two frequencies approaches $e^2/h$, consistent with the theoretical maximum for the AB effect, and harmonics up to third order are observable. Broadband quasiperiodic behavior is reported in a fraction of simply-connected electron waveguide devices that exhibit magnetic asymmetries. Curiously, nanoscale ring devices that are multiply-connected lack signatures of AB quantum interference. The interference phenomena are associated with an inhomogeneous magnetic landscape within the LaAlO$_3$/SrTiO$_3$ nanostructures.

cond-mat.mes-hall

Performance of Recommender Systems: Based on Content Navigator and Collaborative Filtering

In the world of big data, many people find it difficult to access the information they need quickly and accurately. In order to overcome this, research on the system that recommends information accurately to users is continuously conducted. Collaborative Filtering is one of the famous algorithms among the most used in the industry. However, collaborative filtering is difficult to use in online systems because user recommendation is highly volatile in recommendation quality and requires computation using large matrices. To overcome this problem, this paper proposes a method similar to database queries and a clustering method (Contents Navigator) originating from a complex network.

cs.CY

Pascal conductance series in ballistic one-dimensional LaAlO$_3$/SrTiO$_3$ channels

The ability to create and investigate composite fermionic phases opens new avenues for the investigation of strongly correlated quantum matter. We report the experimental observation of a series of quantized conductance steps within strongly interacting electron waveguides formed at the LaAlO$_3$/SrTiO$_3$ interface. The waveguide conductance follows a characteristic sequence within Pascal's triangle: $(1, 3, 6, 10, 15, ...)\cdot e^2/h$, where $e$ is the electron charge and $h$ is the Planck constant. The robustness of these steps with respect to magnetic field and gate voltage indicate the formation of a new family of degenerate quantum liquids formed from bound states of $n = 2, 3, 4, ...$ electrons. These experiments could provide solid-state analogues for a wide range of composite fermionic phases ranging from neutron stars to solid-state materials to quark-gluon plasmas.

cond-mat.str-el

Reconfigurable edge-state engineering in graphene using LaAlO$_3$/SrTiO$_3$ nanostructures

The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The local electron density and resulting conductivity of the LAO/STO interface can be patterned with a conductive AFM tip, and placed within two nanometers of an active graphene device. The proximal LAO/STO nanostructures shift the position of graphene CNP by ~ $10^{12}$ cm$^{-2}$, and are also gateable. Here we use this effect to create reconfigurable edge states in graphene, which are probed using the quantum Hall effect. Quantized resistance plateaus at $h/e^2$ and $h/3e^2$ are observed in a split Hall device, demonstrating edge transport along the c-AFM written edge that depends on the polarity of both the magnetic field and direction of currents. This technique can be readily extended to other device geometries.

cond-mat.mes-hall

Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO$_3$/SrTiO$_3$ Nanowires

SrTiO$_3$-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO$_3$/SrTiO$_3$ interface can support quantized ballistic transport of electrons and (non-superconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest $e^2/h$ plateau indicate a ballistic mean-free path $l_{MF}\sim$ 20 $μ$m, more than two orders of magnitude larger than for 2D LaAlO$_3$/SrTiO$_3$ heterostructures. Non-superconducting electron pairs are found to be stable in magnetic fields as high as $B=11$ T, and propagate ballistically with conductance quantized at 2$e^2/h$. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO$_3$/SrTiO$_3$ system and offers a new platform for the study of strongly interacting 1D electronic systems.

cond-mat.mes-hall

Graphene-Complex-oxide Nanoscale Device Concepts

The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of novel multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Unique capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron-tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine unique transport properties of these two intimately coupled two-dimensional electron systems.

cond-mat.mes-hall

Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels

The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3 heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH) effect, despite a pronounced inconsistency with low-field Hall resistance measurements. Here we report SdH-like resistance oscillations in quasi-1D electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomic force microscopy lithography. These oscillations can be directly attributed to magnetic depopulation of magnetoelectric subbands. Our results suggest that the SdH oscillations in 2D SrTiO3-based systems may originate from naturally forming quasi-1D channels.

cond-mat.mes-hall

Direct Imaging of Sketched Conductive Nanostructures at the LaAlO3/SrTiO3 Interface

Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the conductance is crucial for such devices, it is challenging to directly visualize the local electrical properties at the buried interface. Here we demonstrate conductivity imaging of sketched nanostructures at the LAO/STO interface by microwave impedance microscopy (MIM) with a lateral resolution on the order of 100 nm. The sheet conductance extracted from the MIM data agrees with the transport measurement. The tip-induced insulator-to-metal transition is observed above a threshold voltage of +4 V. Our work paves the way to study emergent phenomena at oxide interfaces by probing nanoscale conductance distribution.

cond-mat.mes-hall

One-Dimensional Nature of Pairing and Superconductivity at the LaAlO$_3$/SrTiO$_3$ Interface

We examine superconductivity in LaAlO$_3$/SrTiO$_3$ channels in which the channel width transitions from the 1D to 2D regime. The superconducting critical current is independent of the channel width and increases approximately linearly with the number of parallel channels. Signatures of electron pairing outside of the superconducting phase are also independent of channel width. Collectively, these results indicate that electron pairing and superconductivity exist at the boundary of these channels and are absent within the interior region of the channels. The intrinsic 1D nature of superconductivity at the LaAlO$_3$/SrTiO$_3$ interface imposes strong physical constraints on possible electron pairing mechanisms.

cond-mat.supr-con

Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures

The pseudospin quantum degree of freedom is one of the most remarkable properties of graphene that distinguishes it from ordinary two-dimensional metals and semiconductors. Pseudospin quantum interference leads to weak antilocalization (WAL) and is influenced strongly by point defects and thermal perturbations that break chirality and destroy phase coherence. Preserving and manipulating quantum transport properties up to room temperature is key to realizing practical pseudospin-based graphene devices. Here we report fabrication and transport characterization of graphene field-effect devices on a complex-oxide heterostructure, LaAlO3/SrTiO3. Signatures of WAL, a consequence of pseudospin quantum interference, persist up to room temperature. The LaAlO3/SrTiO3 substrate plays a critical role in suppressing short-range impurity scattering and electron-phonon coupling. The observation of quantum transport signatures at room temperature is unique to this system and presents new opportunities for the development of pseudospin-based devices and novel multifunctional devices that couple to the complex-oxide interface.

cond-mat.mes-hall