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Junichi Isoya

Publications and source records attributed to Junichi Isoya.

44 records · Page 3Linked to original sources

Electronic structure of the negatively-charged silicon-vacancy center in diamond

The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\langle111\rangle$ aligned split-vacancy structure with $D_{3d}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738 nm optical resonance.

cond-mat.mtrl-sci↗

Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces

Synthetic diamond production is key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers that is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor decomposition (MPCVD) diamond growth technique on (111)-oriented substrates that yields perfect alignment ($94\pm2%$) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority ($74\pm4%$) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.

cond-mat.mes-hall↗

Strongly Coupled Diamond Spin Qubits by Molecular Nitrogen Implantation

Ionized nitrogen molecules ($^{15}$N$_{2}^+$) are used as efficient point sources for creating NV$^-$ pairs in diamond with nanoscale spatial separation and up to 55 kHz magnetic coupling strength. Co-implantation of $^{12}$C$^+$ increased the yield of pairs, and a $^{13}$C-depleted diamond allowed 0.65 ms coherence times to be obtained. Further coupling to a third dark spin provided a strongly coupled three spin register. These results mark an important step towards realization of multi-qubit systems and scalable NV$^-$ quantum registers.

quant-ph↗

Statistical investigations on nitrogen-vacancy center creation

Experiments show that shallow nitrogen implantations (<10keV) result in a negatively charged nitrogen-vacancy center (NV-) yield of 0.01-0.1%. The most succesful technique for introducing NV- centers in the carbon matrix is ion implantation followed by annealing at 1100K. We investigated the influence of channeling effects during shallow implantation and statistical diffusion using molecular dynamics (MD) and Monte Carlo (MC) approaches. Energy barriers for the diffusion process were calculated using the density functional theory (DFT). Our simulations show a significant difference in the NV yield compared to the experiment. Statistically, 25% of the implanted nitrogens form a NV center after annealing.

cond-mat.mtrl-sci↗

High precision nano scale temperature sensing using single defects in diamond

Measuring local temperature with a spatial resolution on the order of a few nanometers has a wide range of applications from semiconductor industry over material to life sciences. When combined with precision temperature measurement it promises to give excess to small temperature changes caused e.g. by chemical reactions or biochemical processes. However, nanoscale temperature measurements and precision have excluded each other so far owing to the physical processes used for temperature measurement of limited stability of nanoscale probes. Here we experimentally demonstrate a novel nanoscale temperature sensing technique based on single atomic defects in diamonds. Sensor sizes range from millimeter down to a few tens of nanometers. Utilizing the sensitivity of the optically accessible electron spin level structure to temperature changes we achieve a temperature noise floor of 5 mK Hz$^{-1/2}$ for single defects in bulk sensors. Using doped nanodiamonds as sensors yields temperature measurement with 130 mK Hz$^{-1/2}$ noise floor and accuracies down to 1 mK at length scales of a few ten nanometers. The high sensitivity to temperature changes together with excellent spatial resolution combined with outstanding sensor stability allows for nanoscale precision temperature determination enough to measure chemical processes of few or single molecules by their reaction heat even in heterogeneous environments like cells.

quant-ph↗

Sensing remote nuclear spins

Sensing single nuclear spins is a central challenge in magnetic resonance based imaging techniques. Although different methods and especially diamond defect based sensing and imaging techniques in principle have shown sufficient sensitivity, signals from single nuclear spins are usually too weak to be distinguished from background noise. Here, we present the detection and identification of remote single C-13 nuclear spins embedded in nuclear spin baths surrounding a single electron spins of a nitrogen-vacancy centre in diamond. With dynamical decoupling control of the centre electron spin, the weak magnetic field ~10 nT from a single nuclear spin located ~3 nm from the centre with hyperfine coupling as weak as ~500 Hz is amplified and detected. The quantum nature of the coupling is confirmed and precise position and the vector components of the nuclear field are determined. Given the distance over which nuclear magnetic fields can be detected the technique marks a firm step towards imaging, detecting and controlling nuclear spin species external to the diamond sensor.

cond-mat.mes-hall↗

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.

cond-mat.mtrl-sci↗