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arXiv · 1303.3730

Statistical investigations on nitrogen-vacancy center creation

Denis Antonov·Timo Häußermann·Andrew Aird·Johannes Roth·Hans-Reiner Trebin·Christoph Müller·Liam McGuiness·Fedor Jelezko·Takashi Yamamoto·Junichi Isoya·Sébastien Pezzagna·Jan Meijer·Jörg Wrachtrup
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Abstract

Experiments show that shallow nitrogen implantations (<10keV) result in a negatively charged nitrogen-vacancy center (NV-) yield of 0.01-0.1%. The most succesful technique for introducing NV- centers in the carbon matrix is ion implantation followed by annealing at 1100K. We investigated the influence of channeling effects during shallow implantation and statistical diffusion using molecular dynamics (MD) and Monte Carlo (MC) approaches. Energy barriers for the diffusion process were calculated using the density functional theory (DFT). Our simulations show a significant difference in the NV yield compared to the experiment. Statistically, 25% of the implanted nitrogens form a NV center after annealing.

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Denis Antonov, Timo Häußermann, Andrew Aird, Johannes Roth, Hans-Reiner Trebin, Christoph Müller, Liam McGuiness, Fedor Jelezko, Takashi Yamamoto, Junichi Isoya, Sébastien Pezzagna, Jan Meijer, Jörg Wrachtrup. 2013-09-03. Statistical investigations on nitrogen-vacancy center creation. https://doi.org/10.1063/1.4860997

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