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K. Ensslin

Publications and source records attributed to K. Ensslin.

At least 127 records · Page 7Linked to original sources

Counting statistics and super-Poissonian noise in a quantum dot

We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore, we have detected bunching of electrons, leading to super-Poissonian noise. We have used the framework of the full counting statistics (FCS) to model the experimental data. The existence of super-Poissonian noise suggests a long relaxation time for the involved excited state, which could be related to the spin relaxation time.

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Quantum dots based on parabolic quantum wells: importance of electronic correlations

We present measurements and theoretical interpretation of the magnetic field dependent excitation spectra of a two-electron quantum dot. The quantum dot is based on an Al$_x$Ga$_{1-x}$As parabolic quantum well with effective $g^\star$-factor close to zero. Results of tunneling spectroscopy of the four lowest states are compared to exact diagonalization calculations and a generalized Heitler--London approximation and good agreement is found. Electronic correlations, associated with the formation of an H$_2$-type Wigner molecule, turn out to be very important in this system.

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Top-gate defined double quantum dots in InAs nanowires

We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport.

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Tunable few electron quantum dots in InAs nanowires

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.

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Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab-initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

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Single electron charging of impurity sites visualized by scanning gate experiments on a quantum point contact

A quantum point contact (QPC) patterned on a two-dimensional electron gas is investigated with a scanning gate setup operated at a temperature of 300 mK. The conductance of the point contact is recorded while the local potential is modified by scanning the tip. Single electron charging of impurities induced by the local potential is observed as a stepwise conductance change of the constriction. By selectively changing the state of some of these impurities, it is possible to observe changes in transmission resonances of the QPC. The location of such impurities is determined, and their density is estimated to be below 50 per μm^2, corresponding to less than 1 % of the doping concentration.

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Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring

We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear mesoscopic transport. The observed asymmetry can be tuned continuously by changing the gate voltages near the arms of the ring, showing that the phase of the nonlinear conductance in a two-terminal interferometer is not rigid, in contrast to the case for the linear conductance.

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Stray-field-induced modification of coherent spin dynamics

Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous field below the Fe stripes is measured for varying magnetic fields. Comparing with reference stripes made of Au, we find an enhancement of the spin precession frequency proportional to the Fe magnetization, in line with a decrease of the spin decay time, which is attributed to the inhomogeneous magnetic stray-field in the quantum well layer.

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Counting statistics of single-electron transport in a quantum dot

We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of the distribution) in a tunable semiconductor QD is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels.

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Two-subband quantum Hall effect in parabolic quantum wells

The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum Hall plateaus. These effects set in with the occupation of the second subband. We discuss our observations in the context of single-particle Landau fan charts of a two-subband system empirically extended by a density dependent subband separation and an enhanced spin-splitting g*.

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Fano effect in a ring-dot system with tunable coupling

Transport measurements are presented on a quantum ring that is tunnel-coupled to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly coupled to the open ring, Fano line shapes are observed in the current through the ring, when the electron number in the dot changes by one. The symmetry of the Fano resonances is found to depend on the magnetic flux penetrating the area of the ring and on the strength of the ring-dot coupling. At temperatures above T=0.65 K the Fano effect disappears while the Aharonov-Bohm interference in the ring persists up to T=4.2 K. Good agreement is found between these experimental observations and a single channel scattering matrix model including decoherence in the dot.

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Design of Q-Band loop-gap resonators at frequencies 34-36 GHz for single electron spin spectroscopy in semiconductor nanostructures

We report on the design of loop-gap resonators (LGR) operating in the frequency range 34-36 GHz with the goal to achieve single electron spin resonance (ESR) in quantum dot nanostructures. We present a comprehensive study of the magnetic field strength and the spatial distribution of the electric and magnetic fields in the resonator by means of experiments and numerical simulations.

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Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages

Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for constant and modulated voltage applied to the conductive tip of the scanning force microscope. All the lithography has been performed in non-contact mode. Modulating the applied voltage enhances the aspect ratio of the oxide lines, which significantly strengthens the insulating properties of the lines on GaAs. In addition, the oxidation process is found to be more reliable and reproducible. Using this technique, a quantum point contact and a quantum wire have been defined and the electronic stability, the confinement potential and the electrical tunability are demonstrated to be similar to the oxidation with constant voltage.

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Excitation spectrum of two correlated electrons in a lateral quantum dot with negligible Zeeman splitting

The excitation spectrum of a two-electron quantum dot is investigated by tunneling spectroscopy in conjuction with theoretical calculations. The dot made from a material with negligible Zeeman splitting has a moderate spatial anisotropy leading to a splitting of the two lowest triplet states at zero magnetic field. In addition to the well-known triplet excitation at zero magnetic field, two additional excited states are found at finite magnetic field. The lower one is identified as the second excited singlet state on the basis of an avoided crossing with the first excited singlet state at finite fields. The measured spectra are in remarkable agreement with exact diagonalization calculations. The results prove the significance of electron correlations and suggest the formation of a state with Wigner-molecular properties at low magnetic fields.

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Phase coherence in the inelastic cotunneling regime

Two quantum dots with tunable mutual tunnel coupling have been embedded in a two-terminal Aharonov-Bohm geometry. Aharonov-Bohm oscillations are investigated in the cotunneling regime. Visibilities of more than 0.8 are measured indicating that phase-coherent processes are involved in the elastic and inelastic cotunneling. An oscillation-phase change of pi is detected as a function of bias voltage at the inelastic cotunneling onset.

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Probing the Kondo density of states in a three-terminal quantum ring

We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration non-linear transport measurements allow to check which lead contributes to the Kondo density of states (DOS) and which does not. When the ring is connected to two strongly and one weakly coupled leads, the measurement of the differential conductance through the weakly coupled lead allows to probe directly the Kondo DOS. In addition, by applying a bias between the two strongly coupled leads, we show the splitting of the out-of-equilibrium DOS.

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Finite bias charge detection in a quantum dot

We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.

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Cotunneling-mediated transport through excited states in the Coulomb blockade regime

We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded regime. In addition, we observe structures related to sequential tunneling through the dot, occuring after it has been excited by an inelastic cotunneling process. We explain our findings using transport calculations within the real-time Green's function approach, including diagrams up to fourth order in the tunneling matrix elements.

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