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K. Ensslin

Publications and source records attributed to K. Ensslin.

At least 145 records · Page 8Linked to original sources

Density dependence of microwave induced magneto-resistance oscillations in a two-dimensional electron gas

We have measured the magneto-resistance of a two-dimensional electron gas (2DEG) under continuous microwave irradiation as a function of electron density and mobility tuned with a metallic top-gate. In the entire range of density and mobility we have investigated, we observe microwave induced oscillations of large amplitude that are B-periodic. These B-periodic oscillations are reminiscent of the ones reported by Kukushkin \textit{et al}[1] and which were attributed to the presence of edge-magneto-plasmons. We have found that the B-periodicity does not increase linearly with the density in our sample but shows a plateau in the range (2.4-3) 10^{11}\rm cm^{-2} $. In this regime, the phase of the B-periodic oscillations is found to shift continuously by two periods.

cond-mat.str-el↗

Spatially resolved manipulation of single electrons in quantum dots using a scanned probe

The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage independent contribution.

cond-mat.mes-hall↗

Multiple layer local oxidation for fabricating semiconductor nanostructures

Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system with integrated charge readout are realized. The structures are tunable via in-plane gates formed by isolated regions in the electron gas and by mutually isolated regions of the Ti film acting as top gates. Coulomb blockade experiments demonstrate the high quality of this fabrication process.

cond-mat.mes-hall↗

Magnetotransport in C-doped AlGaAs heterostructures

High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic fields. This allows us to determine the densities, effective masses and mobilities of the holes populating the spin-split subbands arising from the lack of inversion symmetry in these structures.

cond-mat.mes-hall↗

Time-Resolved Detection of Individual Electrons in a Quantum Dot

We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off the dot can be observed in real time in the current signal from the quantum point contact. From these time-dependent traces, the quantum mechanical coupling between dot and reservoir can be extracted quantitatively. A similar analysis allows the determination of the occupation probability of the dot states.

cond-mat.mes-hall↗

Spin Effects in a Quantum Ring

Recent experiments are reviewed that explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive electron number allows to select possible sequences of spin ground states of the ring. Spin-paired orbital levels can be identified by probing their response to magnetic fields normal to the plane of the ring and electric fields caused by suitable gate voltages. This narrows down the choice of ground-state spin sequences. A gate-controlled singlet--triplet transition is identified and the size of the exchange interaction matrix element is determined.

cond-mat.mes-hall↗

Kondo Effect in a Many-Electron Quantum Ring

The Kondo effect is investigated in a many-electron quantum ring as a function of magnetic field. For fields applied perpendicular to the plane of the ring a modulation of the Kondo effect with the Aharonov-Bohm period is observed. This effect is discussed in terms of the energy spectrum of the ring and the parametrically changing tunnel coupling. In addition, we use gate voltages to modify the ground-state spin of the ring. The observed splitting of the Kondo-related zero-bias anomaly in this configuration is tuned with an in-plane magnetic field.

cond-mat.mes-hall↗

Single-Electron Effects in a Coupled Dot-Ring System

Aharonov-Bohm oscillations are studied in the magnetoconductance of a micron-sized open quantum ring coupled capacitively to a Coulomb-blockaded quantum dot. As the plunger gate of the dot is modulated and tuned through a conductance resonance, the amplitude of the Aharonov-Bohm oscillations in the transconductance of the ring displays a minimum. We demonstrate that the effect is due to a single-electron screening effect, rather than to dephasing. Aharonov-Bohm oscillations in a quantum ring can thus be used for the detection of single charges.

cond-mat.mes-hall↗

Multi-terminal transport through a quantum dot in the Coulomb blockade regime

Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent fluctuations of the coupling strengths as a function of electron number and magnetic field due to changes in the shape of the wave function in the dot. Such a detailed understanding and control of the dot-lead coupling can be extended to more complex systems such as coupled dots, and is essential for building functional quantum electronic systems.

cond-mat.mes-hall↗

Transmission Phase Through Two Quantum Dots Embedded in a Four-Terminal Quantum Ring

We use the Aharonov-Bohm effect in a four-terminal ring based on a Ga[Al]As heterostructure for the measurement of the relative transmission phase. In each of the two interfering paths we induce a quantum dot. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots.

cond-mat.mes-hall↗

Magnetic field dependent transmission phase of a double dot system in a quantum ring

The Aharonov-Bohm effect is measured in a four-terminal open ring geometry based on a Ga[Al]As heterostructure. Two quantum dots are embedded in the structure, one in each of the two interfering paths. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. Although the measured phase shifts are in qualitative agreement with theoretical predictions, the phase evolution exhibits unexpected dependence on the magnetic field. For example, phase lapses are found only in certain ranges of magnetic field.

cond-mat.mes-hall↗

Kelvin Probe Spectroscopy of a Two-Dimensional Electron Gas Below 300 mK

A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in an Ga[Al]As heterostructure. At different separations between AFM tip and sample, a dc-voltage is applied between the tip and the electron gas while simultaneously recording the frequency shift of the oscillating tip. Using a plate capacitor model the local electron density can be extracted from the data. The result coincides within 10% with the data obtained from transport measurements.

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Singlet-Triplet Transition Tuned by Asymmetric Gate Voltages in a Quantum Ring

Wavefunction and interaction effects in the addition spectrum of a Coulomb blockaded many electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field. Hartree and exchange contributions to the interaction are quantitatively evaluated at a crossing between states extended around the ring and states which are more localized in one arm of the ring. A gate tunable singlet-triplet transition of the two uppermost levels of this many electron ring is identified at zero magnetic field.

cond-mat.mes-hall↗

Operating a phase-locked loop controlling a high-Q tuning fork sensor for scanning force microscopy

The implementation of a tuning fork sensor in a scanning force microscope operational at 300 mK is described and the harmonic oscillator model of the sensor is motivated. These sensors exhibit very high quality factors at low temperatures. The nested feedback comprising the sensor, a phase locked loop and a conventional $z$-feedback is analyzed in terms of linear control theory and the dominant noise source of the system is identified. It is shown that the nested feedback has a low pass response and that the optimum feedback parameters for the phase-locked loop and the $z$-feedback can be determined from the knowledge of the tuning fork resonance alone regardless of the tip shape. The advantages of this system compared to pure phase control are discussed.

cond-mat.mes-hall↗

Transport signatures of correlated disorder in a two-dimensional electron gas

We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.

cond-mat.mes-hall↗

Energy spectra of quantum rings

Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence of transport through a quantum dot embedded in one arm of an open ring has been demonstrated. The energy spectrum of closed rings has only recently been analysed by optical experiments and is the basis for the prediction of persistent currents and related experiments. Here we report magnetotransport experiments on a ring-shaped semiconductor quantum dot in the Coulomb blockade regime. The measurements allow us to extract the discrete energy levels of a realistic ring, which are found to agree well with theoretical expectations. Such an agreement, so far only found for few-electron quantum dots, is here extended to a many-electron system. In a semiclassical language our results indicate that electron motion is governed by regular rather than chaotic motion, an unexplored regime in many-electron quantum dots.

cond-mat.mes-hall↗

Electronic properties of antidot lattices fabricated by atomic force lithography

Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20 x20 lattices are demonstrated with periods of 300 nm. The low temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B periodic oscillations superimposed on the classical commensurability peaks at temperatures as high as 1.7 K. These observations indicate the high electronic quality of our samples.

cond-mat.mes-hall↗

Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths.

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