arXiv subjects

K. Hamaya

Publications and source records attributed to K. Hamaya.

At least 37 records · Page 2Linked to original sources

arXiv2011

Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.

cond-mat.mes-hall↗

arXiv2011

Room-temperature generation of giant pure spin currents using Co$_2$FeSi spin injectors

Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power consumptions. Conventional ferromagnetic electrodes such as Co and NiFe have so far been utilized as a spin injector for generating the pure spin currents in nonmagnetic channels. However, the generation efficiency of the pure spin currents is extremely low at room temperature, giving rise to a serious obstacle for device applications. Here, we demonstrate the generation of giant pure spin currents at room temperature in lateral spin valve devices with a highly ordered Heusler-compound Co$_2$FeSi spin injector. The generation efficiency of the pure spin currents for the Co$_2$FeSi spin injectors reaches approximately one hundred times as large as that for NiFe ones, indicating that Heusler-compound spin injectors enable us to materialize a high-performance lateral spin device. The present study is a technological jump in spintronics and indicates the great potential of ferromagnetic Heusler compounds with half metallicity for generating pure spin currents.

cond-mat.mes-hall↗

arXiv2011

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

cond-mat.mtrl-sci↗

arXiv2009

Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.

cond-mat.mes-hall↗

arXiv2009

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.

cond-mat.mtrl-sci↗

arXiv2009

Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

cond-mat.mes-hall↗

arXiv2009

Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)

For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe_3-xMn_xSi alloys become half-metallic for 0.75 < x < 1.5. We discuss the possibility of room-temperature ferromagnetic Fe_3-xMn_xSi/Ge epilayers with high spin polarization.

cond-mat.mtrl-sci↗

arXiv2008

Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic Fe$_{3}$Si layers on Si (111) with keeping an abrupt interface, and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical properties for the Fe$_{3}$Si/Si(111) yield a magnetic moment of ~ 3.16 $mu_{B}$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

cond-mat.mtrl-sci↗

arXiv2007

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

cond-mat.mes-hall↗

arXiv2007

Dynamic nuclear polarization and Knight shift measurements in a breakdown regime of integer quantum Hall effect

Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin polarity flips nuclear spins through the hyperfine interaction. The polarized nuclear spins reduce the spin-splitting energy and accelerate the QHE breakdown. The Knight shift of the nuclear spins is also measured by tuning electron density during the irradiation of radio-frequency magnetic fields.

cond-mat.mes-hall↗

arXiv2007

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.

cond-mat.mes-hall↗

arXiv2007

Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

cond-mat.mes-hall↗

arXiv2007

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

cond-mat.mes-hall↗

arXiv2006

Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect

We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically polarizes nuclear spins through the hyperfine interaction. The polarized nuclear spins in turn accelerate the QHE breakdown, leading to hysteretic voltage-current characteristics of the quantum Hall conductor.

cond-mat.mes-hall↗

arXiv2006

Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.

cond-mat.mes-hall↗

arXiv2006

Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.

cond-mat.mes-hall↗

arXiv2006

Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration

We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperature-dependent ac susceptibility is significantly changed with increasing annealing time. On the basis of our recent scenario [Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we deduce that the growth of highly hole-concentrated cluster regions with [110] uniaxial anisotropy is likely the predominant cause of the enhancement in [110] uniaxial anisotropy at the high hole concentration regime. We can clearly rule out anisotropic lattice strain as a possible origin of the switching of the magnetic anisotropy.

cond-mat.mtrl-sci↗

arXiv2006

Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations

We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of <100> cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.

cond-mat.mtrl-sci↗