arXiv subjects

Karl K. Berggren

Publications and source records attributed to Karl K. Berggren.

At least 55 records · Page 3Linked to original sources

arXiv2022

Electrical Control of Surface Acoustic Waves

Acoustic waves at microwave frequencies have been widely used in wireless communication and recently emerged as versatile information carriers in quantum applications. However, most acoustic devices are passive components, and dynamic control of acoustic waves in a low-loss and scalable manner remains an outstanding challenge, which hinders the development of phononic integrated circuits. Here we demonstrate electrical control of traveling acoustic waves on an integrated lithium niobate platform at both room and millikelvin temperatures. We modulate the phase and amplitude of the acoustic waves and demonstrate an acoustic frequency shifter by serrodyne phase modulation. Furthermore, we show reconfigurable nonreciprocal modulation by tailoring the phase matching between acoustic and quasi-traveling electric fields. Our scalable electro-acoustic platform comprises the fundamental elements for arbitrary acoustic signal processing and manipulation of phononic quantum information.

physics.app-ph↗

arXiv2022

Electron Emission Regimes of Planar Nano Vacuum Emitters

Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free-space, such as high nonlinearity and relative insensitivity to temperature and ionizing radiation, all the while drastically reducing the footprint, increasing the operating bandwidth and reducing the power consumption of each device. Furthermore, planarized vacuum nanoelectronics could easily be integrated at scale similar to typical micro and nanoscale semiconductor electronics. However, the interplay between different electron emission mechanisms from these devices are not well understood, and inconsistencies with pure Fowler-Nordheim emission have been noted by others. In this work, we systematically study the current-voltage characteristics of planar vacuum nano-diodes having few-nanometer radii of curvature and free-space gaps between the emitter and collector. By investigating the current-voltage characteristics of nearly identical diodes fabricated from two different materials and under various environmental conditions, such as temperature and atmospheric pressure, we were able to clearly isolate three distinct emission regimes within a single device: Schottky, Fowler-Nordheim, and saturation. Our work will enable robust and accurate modeling of vacuum nanoelectronics which will be critical for future applications requiring high-speed and low-power electronics capable of operation in extreme conditions.

physics.app-ph↗

arXiv2021

50 Ohm Transmission Lines with Extreme Wavelength Compression Based on Superconducting Nanowires on High-Permittivity Substrates

We demonstrate impedance-matched low-loss transmission lines with a signal wavelength more than 150 times smaller than the free space wavelength using superconducting nanowires on high permittivity substrates. A niobium nitride thin film is patterned in a coplanar waveguide (CPW) transmission line geometry on a bilayer substrate consisting of 100 nm of epitaxial strontium titanate on high-resitivity silicon. The use of strontium titanate on silicon enables wafer-scale fabrication and maximizes process compatibility. It also makes it possible to realize a $50$ $Ω$ characteristic impedance across a wide range of CPW widths, from the nanoscale to the macroscale. We fabricated and characterized an approximately $50$ $Ω$ CPW device with two half-wave stub resonators. Comparing the measured transmission coefficient to numerical simulations, we determine that the strontium titanate film has a dielectric constant of $1.1 \times 10^3$ and a loss tangent of not more than 0.009. To facilitate the design of distributed microwave devices based on this type of material system, we describe an analytical model of the CPW properties that gives good agreement with both measurements and simulations.

cond-mat.supr-con↗

arXiv2021

Secondary Electron Count Imaging in SEM

Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons (SEs) emitted from the sample and is subject to noise due to variations in the voltage signal from the detector. This noise can result in degradation of the SEM image quality for a given imaging dose. SE count imaging, which uses the direct count of SEs detected from the sample instead of the average signal intensity, would overcome this limitation and lead to improvement in SEM image quality. In this paper, we implement an SE count imaging scheme by synchronously outcoupling the detector and beam scan signals from the microscope and using custom code to count detected SEs. We demonstrate a ~30% increase in the image signal-to-noise-ratio due to SE counting compared to conventional imaging. The only external hardware requirement for this imaging scheme is an oscilloscope fast enough to accurately sample the detector signal for SE counting, making the scheme easily implementable on any SEM.

physics.ins-det↗

arXiv2021

PHz Electronic Device Design and Simulation for Waveguide-Integrated Carrier-Envelope Phase Detection

Carrier-envelope phase (CEP) detection of ultrashort optical pulses and low-energy waveform field sampling have recently been demonstrated using direct time-domain methods that exploit optical-field photoemission from plasmonic nanoantennas. These devices make for compact and integratable solid-state detectors operating at optical frequency that work in ambient conditions and require minute pulse energies (picojoule-level). Applications include frequency-comb stabilization, visible to near-infrared time-domain spectroscopy, compact tools for attosecond science and metrology and, due to the high electronic switching speeds, petahertz-scale information processing. However, these devices have been driven by free-space optical waveforms and their implementation within integrated photonic platforms has yet to be demonstrated. In this work, we design and simulate fully-integrated plasmonic bow-tie nanoantennas coupled to a Si$_3$N$_4$-core waveguide for CEP detection. We find that when coupled to realistic on-chip, few-cycle supercontinuum sources, these devices are suitable for direct time-domain CEP detection within integrated photonic platforms. We estimate a signal-to-noise ratio of 30 dB at 50 kHz resolution bandwidth. We address technical details, such as the tuning of the nanoantennas plasmonic resonance and the waveform's CEP slippage in the waveguide. Moreover, we evaluate power losses due to absorption and scattering and we study the device sensitivity to pulse duration and pulse peak field intensity. Our results provide the basis for future design and fabrication of time-domain CEP detectors and allow for the development of fully-integrated attosecond science applications, frequency-comb stabilization and light-wave-based PHz electronics.

physics.optics↗

arXiv2021

Physical properties of amorphous molybdenum silicide films for single photon detectors

We systematically investigated the physical properties of amorphous Mo$_{\rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{\rm x}$ Si$_{1-x}$ films increases gradually with the stoichiometry x, and the highest $T_C$=7.9 K was found in Mo$_{\rm 0.83}$ Si$_{0.17}$. Beyond $x$=0.83, preformed Cooper pairs and superconducting domains persist in the films, despite the superconducting state with perfect zero-resistivity is absent. The thick films of Mo$_{\rm 0.83}$ Si$_{0.17}$ show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo$_{\rm 0.83}$ Si$_{0.17}$ films, however, reveal robust superconductivity even with thickness d$\leq$1 nm. We also characterized wide microwires based on the 2 nm thin Mo$_{\rm 0.8}$ Si$_{0.2}$ films with widths 40 and 60 $μ$m, which show single-photon sensitivity at 780 nm and 1550 nm wavelength

cond-mat.supr-con↗

arXiv2021

Impedance-matched differential superconducting nanowire detectors

Superconducting nanowire single-photon detectors (SNSPDs) are the highest performing photon-counting technology in the near-infrared (NIR). Due to delay-line effects, large area SNSPDs typically trade-off timing resolution and detection efficiency. Here, we introduce a detector design based on transmission line engineering and differential readout for device-level signal conditioning, enabling a high system detection efficiency and a low detector jitter, simultaneously. To make our differential detectors compatible with single-ended time taggers, we also engineer analog differential-to-single-ended readout electronics, with minimal impact on the system timing resolution. Our niobium nitride differential SNSPDs achieve $47.3\,\% \pm 2.4\,\%$ system detection efficiency and sub-$10\,\mathrm{ps}$ system jitter at $775\,\mathrm{nm}$, while at $1550\,\mathrm{nm}$ they achieve $71.1\,\% \pm 3.7\,\%$ system detection efficiency and $13.1\,\mathrm{ps} \pm 0.4\,\mathrm{ps}$ system jitter. These detectors also achieve sub-100 ps timing response at one one-hundredth maximum level, $30.7\,\mathrm{ps} \pm 0.4\,\mathrm{ps}$ at $775\,\mathrm{nm}$ and $47.6\,\mathrm{ps} \pm 0.4\,\mathrm{ps}$ at $1550\,\mathrm{nm}$, enabling time-correlated single-photon counting with high dynamic range response functions. Furthermore, thanks to the differential impedance-matched design, our detectors exhibit delay-line imaging capabilities and photon-number resolution. The properties and high-performance metrics achieved by our system make it a versatile photon-detection solution for many scientific applications.

physics.app-ph↗

arXiv2021

Nanoantenna Design for Enhanced Carrier-Envelope-Phase Sensitivity

Optical-field emission from nanostructured solids such as subwavelength nanoantennas can be leveraged to create sub-femtosecond, PHz-scale electronics for optical-field detection. One application that is of particular interest is the detection of an incident optical pulse's carrier-envelope phase. Such carrier-envelope-phase detection requires few-cycle, broadband optical excitation where the resonant properties of the nanoantenna can strongly alter the response of the near field in time. Little quantitative investigation has been performed to understand how the geometry and resonant properties of the antennae should be tuned to enhance the carrier-envelope phase sensitivity and signal to noise ratio. Here we examine how the geometry and resonance frequency of planar plasmonic nanoantennas can be engineered for enhancing the emitted carrier-envelope-phase-sensitive photocurrent when driven by a few-cycle optical pulse. We find that with the simple addition of curved sidewalls leading to the apex, and proper tuning of the resonance wavelength, the net CEP-sensitive current per nanoantenna can be improved by $5$-$10\times$, and the signal-to-noise-ratio by $50$-$100\times$ relative to simple triangular antennas operated on resonance. Our findings will inform the next generation of nanoantenna designs for emerging applications in ultrafast photoelectron metrology and petahertz electronics.

physics.optics↗

arXiv2021

Precise, Sub-Nanosecond, and High-Voltage Switching of Complex Loads Enabled by Gallium Nitride Electronics

In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 V to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. These circuits also have 0.25 cm$\mathrm{^2}$ active regions and <1 W power dissipation, enabling their integration into a wide variety of environments and apparatus. The proximity of the GaNFETs to the load due to this integration minimizes parasitic quantities that slow switching as well as remove the need to match from 50 $Ω$ lines by allowing for a lumped element approximation small loads. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions.

physics.ins-det↗

arXiv2020

Electrostatic electron mirror in SEM for simultaneous imaging of top and bottom surfaces of a sample

The use of electron mirrors in aberration correction and surface-sensitive microscopy techniques such as low-energy electron microscopy has been established. However, in this work, by implementing an easy to construct, fully electrostatic electron mirror system under a sample in a conventional scanning electron microscope (SEM), we present a new imaging scheme which allows us to form scanned images of the top and bottom surfaces of the sample simultaneously. We believe that this imaging scheme could be of great value to the field of in-situ SEM which has been limited to observation of dynamic changes such as crack propagation and other surface phenomena on one side of samples at a time. We analyze the image properties when using a flat versus a concave electron mirror system and discuss two different regimes of operation. In addition to in-situ SEM, we foresee that our imaging scheme could open up avenues toward spherical aberration correction by the use of electron mirrors in SEMs without the need for complex beam separators.

physics.app-ph↗

arXiv2020

A compact and tunable forward coupler based on high-impedance superconducting nanowires

Developing compact, low-dissipation, cryogenic-compatible microwave electronics is essential for scaling up low-temperature quantum computing systems. In this paper, we demonstrate an ultra-compact microwave directional forward coupler based on high-impedance slow-wave superconducting-nanowire transmission lines. The coupling section of the fabricated device has a footprint of $416\,\mathrm{μm^2}$. At 4.753 GHz, the input signal couples equally to the through port and forward-coupling port (50:50) at $-6.7\,\mathrm{dB}$ with $-13.5\,\mathrm{dB}$ isolation. The coupling ratio can be controlled with DC bias current or temperature by exploiting the dependence of the kinetic inductance on these quantities. The material and fabrication-process are suitable for direct integration with superconducting circuits, providing a practical solution to the signal distribution bottlenecks in developing large-scale quantum computers.

physics.app-ph↗

arXiv2020

Refractory doped titanium nitride nanoscale field emitters

Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities. Recent results have demonstrated that the optical properties of titanium nitride, a refractory and CMOS-compatible plasmonic material, can be tuned by adding silicon and oxygen dopants. However, to fully leverage the potential of titanium (silicon oxy)nitride, a reliable and scalable fabrication process with few-nm precision is needed. In this work, we developed a fabrication process for producing engineered nanostructures with gaps between 10 and 15 nm, aspect ratios larger than 5 with almost 90° steep sidewalls. Using this process, we fabricated large-scale arrays of electrically-connected bow-tie nanoantennas with few-nm free-space gaps. We measured a typical variation of 4 nm in the average gap size. Using applied DC voltages and optical illumination, we tested the electronic and optoelectronic response of the devices, demonstrating sub-10-V tunneling operation across the free-space gaps, and quantum efficiency of up to 1E-3 at 1.2 μm, which is comparable to a bulk silicon photodiode at the same wavelength. Tests demonstrated that the titanium silicon oxynitride nanostructures did not significantly degrade, exhibiting less than 5 nm of shrinking of the average gap dimensions over few-μm^2 areas after roughly 6 hours of operation. Our results will be useful for developing the next generation of robust and CMOS-compatible nanoscale devices for high-speed and low-power field-emission electronics and optoelectronics applications.

physics.app-ph↗

arXiv2020

Impact of DC bias on Weak Optical-Field-Driven Electron Emission in Nano-Vacuum-Gap Detectors

In this work, we investigate multiphoton and optical-field tunneling emission from metallic surfaces with nanoscale vacuum gaps. Using time-dependent Schrodinger equation (TDSE) simulations, we find that the properties of the emitted photocurrent in such systems can be greatly altered by the application of only a few-volt DC bias. We find that when coupled with expected plasmonic enhancements within the nanometer-scale metallic gaps, the application of this DC bias significantly reduces the threshold for the transition to optical-field-driven tunneling from the metal surface, and could sufficiently enhance the emitted photocurrents, to make it feasible to electronically tag fJ ultrafast pulses at room temperature. Given the petahertz-scale instantaneous response of the photocurrents, and the low effective capacitance of thin-film nanoantenna devices that enables < 1 fs response time, detectors that exploit this bias-enhanced surface emission from nanoscale vacuum gaps could prove to be useful for communication, petahertz electronics, and ultrafast optical-field-resolved metrology.

physics.optics↗

arXiv2020

Superconducting MoN thin films prepared by DC reactive magnetron sputtering for nanowire single-photon detectors

We present a comprehensive study of molybdenum nitride (MoN) thin film deposition using direct current (DC) reactive magnetron sputtering. We have investigated the effect of various deposition conditions on the superconducting and electrical properties of the films. Furthermore, we have shown that meander-shaped single-photon detectors made from 5 nm MoN films have saturated quantum detection efficiency at the telecom wavelength of 1550 nm. Our results indicate that MoN may be a material of interest for practical applications of low-temperature superconductors, including single-photon detectors and transition-edge sensors.

cond-mat.supr-con↗

arXiv2020

Enhancing the Performance of Superconducting Nanowire-Based Detectors with High-Filling Factor by Using Variable Thickness

Current crowding at bends of superconducting nanowire single-photon detectors is one of the main factors limiting the performance of meander-style detectors with large filling factors. In this paper, we propose a new concept to reduce influence of the current crowding effect, a so-called variable thickness SNSPD, which is composed of two regions with different thicknesses. A larger thickness of bends in comparison to the thickness of straight nanowire sections locally reduces the current density and reduces the suppression of the critical current caused by the current crowding. This allows variable thickness SNSPD to have a higher critical current, an improved detection efficiency, and decreased dark count rate in comparison with a standard uniform thickness SNSPD with an identical geometry and film quality.

cond-mat.supr-con↗

arXiv2020

On-chip sampling of optical fields with attosecond resolution

Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improvements with regard to molecular sensitivity and limits of detection compared to traditional spectroscopic methods. Despite the many scientific and technological motivations, time-domain, optical-field sampling systems operating in the visible to near-infrared spectral regions are seldom accessible, requiring large driving pulse energies, and large laser amplifier systems, bulky apparatuses, and vacuum environments. Here, we demonstrate an all-on-chip, optoelectronic device capable of sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. Our solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron bursts. These bursts are used to probe the electric field of weak optical transients. We demonstrated our devices by sampling the electric field of a ~5 fJ, broadband near-infrared ultrafast laser pulse using a ~50 pJ near-infrared driving pulse. Our sampling measurements recovered the weak optical transient as well as localized plasmonic dynamics of the emitting nanoantennas $in~situ$. This field-sampling device--with its compact footprint and low pulse-energy requirements--offers opportunities in a variety of applications, including: broadband time-domain spectroscopy in the molecular fingerprint region, time-domain analysis of nonlinear phenomena, and detailed studies of strong-field light-matter interactions.

physics.optics↗

arXiv2020

Image-Histogram-based Secondary Electron Counting to Evaluate Detective Quantum Efficiency in SEM

Scanning electron microscopy is a powerful tool for nanoscale imaging of organic and inorganic materials. An important metric for characterizing the limits of performance of these microscopes is the Detective Quantum Efficiency (DQE), which measures the fraction of emitted secondary electrons (SEs) that are detected by the SE detector. However, common techniques for measuring DQE approximate the SE emission process to be Poisson distributed, which can lead to incorrect DQE values. In this paper, we introduce a technique for measuring DQE in which we directly count the mean number of secondary electrons detected from a sample using image histograms. This technique does not assume Poisson distribution of SEs and makes it possible to accurately measure DQE for a wider range of imaging conditions. As a demonstration of our technique, we map the variation of DQE as a function of working distance in the microscope.

physics.ins-det↗

arXiv2020

A superconducting nanowire spiking element for neural networks

As the limits of traditional von Neumann computing come into view, the brain's ability to communicate vast quantities of information using low-power spikes has become an increasing source of inspiration for alternative architectures. Key to the success of these largescale neural networks is a power-efficient spiking element that is scalable and easily interfaced with traditional control electronics. In this work, we present a spiking element fabricated from superconducting nanowires that has pulse energies on the order of ~10 aJ. We demonstrate that the device reproduces essential characteristics of biological neurons, such as a refractory period and a firing threshold. Through simulations using experimentally measured device parameters, we show how nanowire-based networks may be used for inference in image recognition, and that the probabilistic nature of nanowire switching may be exploited for modeling biological processes and for applications that rely on stochasticity.

q-bio.NC↗