arXiv subjects

Kazuhiko Hara

Publications and source records attributed to Kazuhiko Hara.

13 recordsLinked to original sources

arXiv2024

Development of HPK Capacitive Coupled LGAD (AC-LGAD) detectors

The detectors with $\mathcal{O}$(10) $μ$m spatial resolution and $\mathcal{O}$(10) ps timing resolution construct powerful particle trackers for future hadron or lepton collider experiments. LGAD: Low-Gain-Avalanche-Diode is a semiconductor detector technology to improve timing resolution. Capacitive Coupled LGAD (AC-LGAD) detectors have been developed with HPK in order to meet both spatial and timing resolution requirements. Prototype samples with finely segmented electrodes have been produced and tested with various sensor fabrication parameters: doping concentrations, active thickness and electrode coupling capacitance. Timing resolution and signal height were evaluated with beta-ray. As a result, 100 $μ$m pitch pixel detector has been successfully developed achieving a good signal to noise ratio and 30 ps timing resolution for beta-ray. The detectors have to meet radiation hardness requirements as well. Radiation hardness of LGAD detectors has to be improved to use the detectors as inner trackers for hadron colliders. One of the major mechanisms of radiation damage of LGAD detectors is acceptor removal: shallow dopants in the gain layer of LGAD detectors are reduced by radiation damage. Two novel ideas are tested on effectiveness of delaying the acceptor removal.

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arXiv2023

Development of AC-LGAD detector with finer pitch electrodes for high energy physics experiments

Low-Gain Avalanche Diode (LGAD) sensor is one of candidate sensors for the tracker at future hadron collider experiments. To use this sensor as a tracking detector, AC-LGAD sensor is being developed which has both timing and spatial resolutions. In high luminosity environments, good timing resolution (typically 30 ps) together with $\mathcal{O}$(10) ${\mathrmμ}$m spatial resolution helps to reduce pileup effect and reconstruct tracks correctly. By optimizing fabrication parameters, 80 ${\mathrmμ}$m pitch strip and 100 ${\mathrmμ}$m pitch pixel sensors are successfully produced. The signal height (MPV) was 39.26$\pm$0.08 mV and 128.9$\pm$3.3 mV, respectively, for penetrating $β$ particles. The observed 60% of signal reduction of the strip sensor is explained by a larger inter-electrode capacitance compared with the pixel sensor. In this paper, we present the performance of fine electrode pitch AC-LGAD sensors including the pulse height and cross-talk of pixel and strip type sensors evaluated using a $β$-ray source and the detection efficiency measured in an 800 MeV electron beam.

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arXiv2022

Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV

We developed a beam telescope system comprising five layers of 300-$μ$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $μ$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The signal-to-noise ratio of 140--230 is realized at a bias voltage of 20~V. The tracker system was tested using a positron beam of 200--822 MeV/c, and various tracking methods are examined to optimize spatial precision achievable at these energies. The best tracking precision including the precision of the sensor under test itself is 11.04 $\pm$ 0.10 $μ$m for 822-MeV/c positrons for an equidistant sensor spacing of 32 mm. The achieved precision results combined with the intrinsic spatial resolution value obtained for a similar system using 120 GeV protons are used to estimate the tracking performance of electrons in the GeV energy range; a tracking precision of 2.22 $μ$m is evaluated for 5-GeV electrons. The method to estimate the tracking performance is verified using a Geant4-based simulation. The developed high precision tracker system enables to map the detailed performance of the sensors with pixel sizes of $\mathcal{O}$(10 $μ$m), therefore will be a powerful system for development of devices targeting precision position resolutions.

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arXiv2022

Optimization of capacitive coupled Low Gain Avalanche Diode (AC-LGAD) sensors for precise time and spatial resolution

Capacitive-coupled Low-Gain Avalanche Diode (AC-LGAD) sensors are being developed for high-energy particle physics experiments as a detector which provides fast time information with fine spatial resolution. This paper describes optimizations of AC-LGAD sensor fabrication parameters, such as doping concentrations of the gain and electrode layers as well as the AC insulator capacitance, to realize $\mathcal{O}$(10)~\um{} spacial resolution, small charge cross talk to the neighboring electrodes, detection efficiency higher than 99\% at a 10$^{-4}$ fake rate and time resolution of about 30~ps. The radiation tolerance of the sensor is presented. In addition, further application to a device capable of visible and infra-red light detection is discussed.

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arXiv2022

Characterization of BNL and HPK AC-LGAD sensors with a 120 GeV proton beam

We present measurements of AC-LGADs performed at the Fermilab's test beam facility using 120 GeV protons. We studied the performance of various strip and pad AC-LGAD sensors that were produced by BNL and HPK. The measurements are performed with our upgraded test beam setup that utilizes a high precision telescope tracker, and a simultaneous readout of up to 7 channels per sensor, which allows detailed studies of signal sharing characteristics. These measurements allow us to assess the differences in designs between different manufacturers, and optimize them based on experimental performance. We then study several reconstruction algorithms to optimize position and time resolutions that utilize the signal sharing properties of each sensor. We present a world's first demonstration of silicon sensors in a test beam that simultaneously achieve better than 6-10 micron position and 30 ps time resolution. This represents a substantial improvement to the spatial resolution than would be obtained with binary readout of sensors with similar pitch.

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arXiv2020

Investigation of the Status of Unit 2 Nuclear Reactor of the Fukushima Daiichi by the Cosmic Muon Radiography

We have investigated the status of the nuclear debris in the Unit-2 Nuclear Reactor of the Fukushima Daiichi Nuclear Power plant by the method called Cosmic Muon Radiography. In this measurement, the muon detector was placed outside of the reactor building as was the case of the measurement for the Unit-1 Reactor. Compared to the previous measurements, the detector was down-sized, which made us possible to locate it closer to the reactor and to investigate especially the lower part of the fuel loading zone. We identified the inner structures of the reactor such as the containment vessel, pressure vessel and other objects through the thick concrete wall of the reactor building. Furthermore, the observation showed existence of heavy material at the bottom of the pressure vessel, which can be interpreted as the debris of melted nuclear fuel dropped from the loading zone.

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arXiv2020

Investigation of Unit-1 Nuclear Reactor of the Fukushima Daiichi by Cosmic Muon Radiography

We have investigated the status of the nuclear fuel assemblies in Unit-1 reactor of the Fukushima Daiichi Nuclear Power plant by the method called Cosmic Muon Radiography. In this study, muon tracking detectors were placed outside of the reactor building. We succeeded in identifying the inner structure of the reactor complex such as the reactor containment vessel, pressure vessel, and other structures of the reactor building, through the concrete wall of the reactor building. We found that a large amount of fuel assemblies was missing in the original fuel loading zone inside the pressure vessel. It can be naturally interpreted that most of the nuclear fuel was melt and dropped down to the bottom of the pressure vessel or even below.

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arXiv2019

Imaging the Inner Structure of a Nuclear Reactor by Cosmic Muon Radiography

We studied the inner structure of the nuclear reactor of the Japan Atomic Power Company (JAPC) at Tokai, Japan, by the muon radiography. In this study, muon detectors were placed outside of the reactor building. By detecting cosmic muons penetrating through the wall of the reactor building, we could successfully identify the objects such as the containment vessel, pressure vessel, and other structures of the reactor. We also observed a concentration of heavy material which can be attributed to the nuclear fuel assemblies stored in the nuclear fuel storage pool.

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arXiv2016

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

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arXiv2015

TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.

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arXiv2015

Compensation for TID Damage in SOI Pixel Devices

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy.

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arXiv2015

Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

We are developing monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $\mathrm{^{60}Co}~γ$'s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed a response for IR laser similar to of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. We conclude that the Double SOI sensor is radiation hard enough to be used in HEP experiments in harsh radiation environments such as at Bell II or ILC.

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arXiv2015

X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement

X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement.

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