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arXiv · 1506.08510

X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement

Ikuo Kurachi·Kazuo Kobayashi·Hiroki Kasai·Marie Mochizuki·Masao Okihara·Takaki Hatsui·Kazuhiko Hara·Yasuo Arai
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Abstract

X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement.

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Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai, Marie Mochizuki, Masao Okihara, Takaki Hatsui, Kazuhiko Hara, Yasuo Arai. 2015-06-29. X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement. https://arxiv.org/abs/1506.08510

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