TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

Shunsuke Honda; Kazuhiko Hara; Daisuke Sekigawa; Bipin Subedi; Mari Asano; Naoshi Tobita; Wataru Aoyagi; Yasuo Arai; Akimasa Ishikawa; Yoshimasa Ono; Itaru Ushiki; SOI Collaboration

arXiv · 1507.07035

TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

Shunsuke Honda·Kazuhiko Hara·Daisuke Sekigawa·Bipin Subedi·Mari Asano·Naoshi Tobita·Wataru Aoyagi·Yasuo Arai·Akimasa Ishikawa·Yoshimasa Ono·Itaru Ushiki·SOI Collaboration

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Abstract

We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.

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Shunsuke Honda, Kazuhiko Hara, Daisuke Sekigawa, Bipin Subedi, Mari Asano, Naoshi Tobita, Wataru Aoyagi, Yasuo Arai, Akimasa Ishikawa, Yoshimasa Ono, Itaru Ushiki, SOI Collaboration. 2015-07-24. TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices. https://arxiv.org/abs/1507.07035

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