arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 901 records · Page 50Linked to original sources

arXiv2024

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

The use of metal van der Waals contacts and the implicit reduction in Fermi-level pinning in contacted semiconductors has led to remarkable device optimizations. For example, using graphene as an electrical contact allows for tunable Schottky barriers in transistors and barristors. In this study, we present a double Schottky barrier model and apply it to barrier tunable all van der Waals transistors. In a molybdenum disulfide (MoS$_2$) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky-Mott rule from simple two-terminal current-voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrier \textit{in-situ} using a regional contact gate. Our results show that a basic back-to-back diode model, applied to two terminal measurements, can capture the diode properties of all-van-der-Waals transistors relatively well.

cond-mat.mes-hall↗

arXiv2024

Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES

Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic correlations. Numerous technical challenges arising from spatial inhomogeneity of interlayer interactions, twist angle and device functionality have so far limited momentum-resolved electronic structure measurements of these systems to static conditions. Here, we present a detailed characterization of the electronic structure exhibiting miniband dispersions for twisted bilayer graphene, near the magic angle, integrated in a functional device architecture using micro-focused angle-resolved photoemission spectroscopy. The optimum conditions for visualizing the miniband dispersion are determined by exploiting the spatial resolution and photon energy tunability of the light source and applied to extract a hybridization gap size of $(0.14 \pm 0.03)$~eV and flat band segments extending across a moiré mini Brillouin zone. \textit{In situ} electrostatic gating of the sample enables significant electron-doping, causing the conduction band states to shift below the Fermi energy. Our work emphasizes key challenges in probing the electronic structure of magic angle bilayer graphene devices and outlines conditions for exploring the doping-dependent evolution of the dispersion that underpins the ability to control many-body interactions in the material.

cond-mat.mes-hall↗

arXiv2024

Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator

We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance ($Z_\mathrm{r} \approx 1 \mathrm{kΩ}$) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waals heterostructure. Electric dipole coupling between the subsystems allows the resonator to sense the electric susceptibility of the double quantum dot from which we reconstruct its charge stability diagram. We achieve sensitive and fast detection with a signal-to-noise ratio of 3.5 within 1 $μ\mathrm{s}$ integration time. The charge-photon interaction is quantified in the dispersive and resonant regimes by comparing the coupling-induced change in the resonator response to input-output theory, yielding a maximal coupling strength of $g/2π = 49.7 \mathrm{MHz}$. Our results introduce cQED as a probe for quantum dots in van der Waals materials and indicate a path toward coherent charge-photon coupling with bilayer graphene quantum dots.

cond-mat.mes-hall↗

arXiv2024

Strongly coupled edge states in a graphene quantum Hall interferometer

Electronic interferometers using the chiral, one-dimensional (1D) edge channels of the quantum Hall effect (QHE) can demonstrate a wealth of fundamental phenomena. The recent observation of phase jumps in a Fabry-Pérot (FP) interferometer revealed anyonic quasiparticle exchange statistics in the fractional QHE. When multiple integer edge channels are involved, FP interferometers have exhibited anomalous Aharonov-Bohm (AB) interference frequency doubling, suggesting putative pairing of electrons into 2e quasiparticles. Here, we use a highly tunable graphene-based QHE FP interferometer to observe the connection between interference phase jumps and AB frequency doubling, unveiling how strong repulsive interaction between edge channels leads to the apparent pairing phenomena. By tuning electron density in-situ from filling factor ν<2 to ν>7, we tune the interaction strength and observe periodic interference phase jumps leading to AB frequency doubling. Our observations demonstrate that the combination of repulsive interaction between the spin-split ν=2 edge channels and charge quantization is sufficient to explain the frequency doubling, through a near-perfect charge screening between the localized and extended edge channels. Our results show that interferometers are sensitive probes of microscopic interactions and enable future experiments studying correlated electrons in 1D channels using our highly tunable platform.

cond-mat.mes-hall↗

arXiv2024

Long-lived valley states in bilayer graphene quantum dots

Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital degeneracy that arises from the symmetry of the hexagonal crystal structure. The use of valleys could be advantageous, as known spin- and orbital-mixing mechanisms are unlikely to be at work for valleys, promising more robust qubits. The Berry curvature associated with valley states allows for electrical control of their energies, suggesting routes for coherent qubit manipulation. However, the relaxation time of valley states -- which ultimately limits these qubits' coherence properties and therefore their suitability as practical qubits -- is not yet known. Here, we measure the characteristic relaxation times of these spin and valley states in gate-defined bilayer graphene quantum dot devices. Different valley states can be distinguished from each other with a fidelity of over 99%. The relaxation time between valley triplets and singlets exceeds 500ms, and is more than one order of magnitude longer than for spin states. This work facilitates future measurements on valley-qubit coherence, demonstrating bilayer graphene as a practical platform hosting electrically controlled long-lived valley qubits.

cond-mat.mes-hall↗

arXiv2024

Tunable interplay between light and heavy electrons in twisted trilayer graphene

In strongly interacting systems with multiple energy bands, the interplay between electrons with different effective masses and the enlarged Hilbert space drives intricate correlated phenomena that do not occur in single-band systems. Recently, magic-angle twisted trilayer graphene (MATTG) has emerged as a promising tunable platform for such investigations: the system hosts both slowly dispersing, "heavy" electrons inhabiting its flat bands as well as delocalized "light" bands that disperse as free Dirac fermions. Most remarkably, superconductivity in twisted trilayer graphene and multilayer analogues with additional dispersive bands exhibits Pauli limit violation and spans a wider range of phase space compared to that in twisted bilayer graphene, where the dispersive bands are absent. This suggests that the interactions between different bands may play a fundamental role in stabilizing correlated phases in twisted graphene multilayers. Here, we elucidate the interplay between the light and heavy electrons in MATTG as a function of doping and magnetic field by performing local compressibility measurements with a scanning single-electron-transistor microscope. We establish that commonly observed resistive features near moiré band fillings $ν$=-2, 1, 2 and 3 host a finite population of light Dirac electrons at the Fermi level despite a gap opening in the flat band sector. At higher magnetic field and near charge neutrality, we discover a new type of phase transition sequence that is robust over nearly 10 micrometers but exhibits complex spatial dependence. Mean-field calculations establish that these transitions arise from the competing population of the two subsystems and that the Dirac sector can be viewed as a new flavor analogous to the spin and valley degrees of freedom.

cond-mat.mes-hall↗

arXiv2024

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer graphene (TDBG). We observe two different QOs at low temperature, one with a periodicity in carrier density (n), i.e. Shubnikov de Haas oscillation (SdHO) due to Landau quantization, and the other one in displacement field (D), resulting a grid pattern. We quantify the interlayer coupling strength by measuring the interlayer capacitance from the grid pattern with a capacitance model, revealing an electron hole asymmetry. At high temperature when SdHO are thermal smeared, we observe resistance peaks when LLs from two minivalleys in the moiré Brillion zone are aligned, regardless of carrier density; eventually, it results in a two fold increase of oscillating frequency in D, serving as a smoking gun evidence of the magneto intersubband oscillations (MISO) in a double layer system. The temperature dependence of MISO suggests electron-electron interaction between two minivalleys play a crucial rule in the scattering, and the scattering times obtained from MISO thermal damping are found to be correlated with the interlayer coupling strength. Our study reveals an intriguing interplay among Landau quantization, moiré band structure, and scatterings.

cond-mat.mes-hall↗

arXiv2024

Interplay of plasmonics and strain for Hexagonal Boron Nitride emission engineering

In the realm of quantum information and sensing, there has been substantial interest in the single-photon emission associated with defects in hexagonal boron nitride (hBN). With the goal of producing deterministic emission centers, in this work, we present a platform for engineering emission in hBN integrated with gold truncated nanocone structures. Our findings highlights that, the activation of emission is due to the truncated gold nanocones. Furthermore, we measure the quantum characteristics of this emission and find that while our system demonstrates support for single-photon emission, the origin of this emission remains ambiguous. Specifically, it is unclear whether the emission arises from defects generated by the induced strain or from alternative defect mechanisms. This uncertainty stems from the fluorescence properties inherent to gold, complicating our definitive attribution of the quantum emission source. To provide a rigorous theoretical foundation, we elucidate the effects of strain via the Kirchhoff-Love theory. Additionally, the enhancements observed due to plasmonic effects are comprehensively explained through the resolution of Maxwell's equations. This study will be useful for the development of deterministic and tunable single photonic sources in two dimensional materials and their integration with plasmonic platforms.

physics.optics↗

arXiv2024

Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact

Quantum point contacts (QPCs) are an essential component in mesoscopic devices. Here, we study the transmission of quantum Hall edge modes through a gate-defined QPC in monolayer graphene. We observe resonant tunneling peaks and a nonlinear conductance pattern characteristic of Coulomb-blockaded localized states. The in-plane electric polarizability reveals the states are localized at a classically-unstable electrostatic saddle point. We explain this unexpected finding within a self-consistent Thomas-Fermi model, finding that localization of a zero-dimensional state at the saddle point is favored whenever the applied confinement potential is sufficiently soft compared to the Coulomb energy. Our results provide a direct demonstration of Coulomb-driven reconstruction at the boundary of a quantum Hall system.

cond-mat.mes-hall↗

arXiv2024

Robust flat bands in twisted trilayer graphene quasicrystals

Moiré structures formed by twisting three layers of graphene with two independent twist angles present an ideal platform for studying correlated quantum phenomena, as an infinite set of angle pairs is predicted to exhibit flat bands. Moreover, the two mutually incommensurate moiré patterns among the twisted trilayer graphene (TTG) can form highly tunable moiré quasicrystals. This enables us to extend correlated physics in periodic moiré crystals to quasiperiodic systems. However, direct local characterization of the structure of the moiré quasicrystals and of the resulting flat bands are still lacking, which is crucial to fundamental understanding and control of the correlated moiré physics. Here, we demonstrate the existence of flat bands in a series of TTGs with various twist angle pairs and show that the TTGs with different magic angle pairs are strikingly dissimilar in their atomic and electronic structures. The lattice relaxation and the interference between moiré patterns are highly dependent on the twist angles. Our direct spatial mappings, supported by theoretical calculations, reveal that the localization of the flat bands exhibits distinct symmetries in different regions of the moiré quasicrystals.

cond-mat.mtrl-sci↗

arXiv2024

An open-source robust machine learning platform for real-time detection and classification of 2D material flakes

The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe$_2$, MoSe$_2$, CrI$_3$, 1T-TaS$_2$ and hexagonal BN. Our platform has been tested over a two-year period, during which more than $10^6$ images of multiple different materials were acquired by over 30 individual researchers.

cond-mat.mes-hall↗

arXiv2024

Magneto-Thermoelectric Transport in Graphene Quantum Dot with Strong Correlations

Disorder at the etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially-filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We use quantum Hall edge states in the graphene electrodes to measure electrical conductance and thermoelectric power across the GQD. We observe a rapid diminishing of electric conductance fluctuations and slowly decreasing thermoelectric power across the GQD with increasing temperature, consistent with recent theoretical predictions for the SYK regime.

cond-mat.mes-hall↗

arXiv2024

Revealing dark exciton signatures in polariton spectra of 2D materials

Dark excitons in transition metal dichalcogenides (TMD) have been so far neglected in the context of polariton physics due to their lack of oscillator strength. However, in tungsten-based TMDs, dark excitons are known to be the energetically lowest states and could thus provide important scattering partners for polaritons. In this joint theory-experiment work, we investigate the impact of the full exciton energy landscape on polariton absorption and reflectance. By changing the cavity detuning, we vary the polariton energy relative to the unaffected dark excitons in such a way that we open or close specific phonon-driven scattering channels. We demonstrate both in theory and experiment that this controlled switching of scattering channels manifests in characteristic sharp changes in optical spectra of polaritons. These spectral features can be exploited to extract the position of dark excitons. Our work suggests new possibilities for exploiting polaritons for fingerprinting nanomaterials via their unique exciton landscape.

cond-mat.mes-hall↗

arXiv2024

Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors

Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitation of constructive interference of plasma waves in such detectors not only promises frequency selectivity, but also a pronounced sensitivity enhancement at the target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been only revealed at cryogenic temperatures so far, and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room-temperature ultimately relies on the weak intrinsic electron-phonon scattering in graphene, which avoids the damping of the plasma oscillations.

cond-mat.mes-hall↗

arXiv2024

Anomalous Landau level gaps near magnetic transitions in monolayer WSe$_2$

First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of monolayer WSe$_2$ in a magnetic field. We resolve a sequence of first-order phase transitions between completely spin-polarized LLs and states with LLs of both spins. Unexpectedly, the LL gaps are roughly constant over a wide range of magnetic fields below the transitions, which we show reflects a preference for opposite spin excitations of the spin-polarized ground state. These transitions also extend into compressible regimes, with a sawtooth boundary between full and partial spin polarization. We link these observations to the important influence of LL filling on the exchange energy beyond a smooth density-dependent contribution. Our results show that WSe$_2$ realizes a unique hierarchy of energy scales where such effects induce re-entrant magnetic phase transitions tuned by density and magnetic field.

cond-mat.mes-hall↗

arXiv2024

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices.

cond-mat.mes-hall↗

arXiv2023

Tunable even- and odd-denominator fractional quantum Hall states in trilayer graphene

The fractional quantum Hall (FQH) states are exotic quantum many-body phases whose elementary charged excitations are neither bosons nor fermions but anyons, obeying fractional braiding statistics. While most FQH states are believed to have Abelian anyons, the Moore-Read type states with even denominators, appearing at half filling of a Landau level (LL), are predicted to possess non-Abelian excitations with appealing potentials in topological quantum computation. These states, however, depend sensitively on the orbital contents of the single-particle LL wavefunction and the mixing between different LLs. Although they have been observed in a few materials, their non-Abelian statistics still awaits experimental confirmation. Here we show magnetotransport measurements on Bernal-stacked trilayer graphene (TLG), whose unique multiband structure facilitates the interlaced LL mixing, which can be controlled by external magnetic and displacement fields. We observe a series of robust FQH states including even-denominator ones at filling factors $ν=-9/2$, $-3/2$, $3/2$ and $9/2$. In addition, we are able to finetune the LL mixing and crossings to drive quantum phase transitions of these half-filling states and their neighboring odd-denominator ones, exhibiting a related emerging and waning behavior. Our results establish TLG as a controllable system for tuning the weights of LL orbitals and mixing strength, and a fresh platform to seek for non-Abelian quasi-particles.

cond-mat.mes-hall↗

arXiv2023

Fractional Quantum Anomalous Hall Effect in a Graphene Moire Superlattice

The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The demonstration of FQAHE could lead to non-Abelian anyons which form the basis of topological quantum computation. So far, FQAHE has been observed only in twisted MoTe2 (t-MoTe2) at moire filling factor v > 1/2. Graphene-based moire superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moire superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance Rxy = h/(ve^2) at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moire superlattice respectively. These features are accompanied by clear dips in the longitudinal resistance Rxx. In addition, at zero magnetic field, Rxy equals 2h/e^2 at v = 1/2 and varies linearly with the filling factor-similar to the composite Fermi liquid (CFL) in the half-filled lowest Landau level at high magnetic fields. By tuning the gate displacement field D and v, we observed phase transitions from CFL and FQAH states to other correlated electron states. Our graphene system provides an ideal platform for exploring charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field, especially considering a lateral junction between FQAHE and superconducting regions in the same device.

cond-mat.mes-hall↗