arXiv subjects

Kuo Ma

Publications and source records attributed to Kuo Ma.

5 recordsLinked to original sources

arXiv2026

A High Gain Preamplifier Board for Low Charge Semiconductor Detectors

We present a high-gain, low-noise preamplifier board designed for reading out low-charge semiconductor detectors--specifically Low-Gain Avalanche Detectors (LGADs) and three-dimensional (3D) silicon sensors--in high-energy physics applications. The circuit employs a three-stage architecture featuring a discrete SiGe:C bipolar junction transistor (BJT)-based transimpedance amplifier (TIA) front-end followed by two resistive feedback amplification stages using LTC6431 chips. This configuration achieves a charge gain of 115.27 mV ns/fC with excellent linearity over an input range of 0.5 fC to 25 fC and a wide bandwidth spanning from 34.0 MHz to 594.3 MHz. Experimental evaluations coupled with LGAD detectors demonstrate a time resolution of 36.41 ps and an equivalent noise charge (ENC) of 0.18 fC at 20 {\deg}C. Furthermore, tests with conventional PIN sensors without a gain layer yield a timing resolution of 76.10 ps with an ENC of 0.10 fC, and tests with the 3D silicon detector yield 39.40 ps with an ENC of 0.09 fC, all measured under the same thermal condition. All configurations confirm the board's capability in low-signal regimes, significantly outperforming previous reference designs. A six-channel variant of the board has also been developed to support position-sensitive measurements. These findings demonstrate the board's suitability for laboratory-based 4D tracking detector characterisation, while simultaneously providing the groundwork for dedicated ASIC development.

physics.ins-det↗

arXiv2026

Hyperon-Nucleon Spectrometer

Chirality lies at the heart of low-energy QCD, governing the symmetry structure that shapes hadron masses and strong interaction dynamics. Among the most compelling open questions tied to chiral dynamics and spontaneous chiral symmetry breaking is the longstanding $\Lambda$ polarization puzzle, in which $\Lambda$ hyperons produced in unpolarized hadronic collisions exhibit a surprisingly large transverse polarization that remains theoretically unexplained. This whitepaper presents the proposal for the Hyperon-Nucleon Spectrometer (H-NS) at the High-Intensity heavy-ion Accelerator Facility (HIAF). Leveraging the high energy and high intensity of HIAF's proton and heavy-ion beams, the H-NS experiment will perform systematic studies of hyperon polarization phenomena and their underlying mechanisms in proton-proton ($pp$), proton-nucleus ($pA$), and nucleus-nucleus ($AA$) collisions in the fixed target mode. A wide-range beam energy scan, including proton beams from 3 GeV up to 9.3 GeV (HIAF) and up to 32 GeV (upgraded HIAF), will be conducted to examine the dependence of polarization on collision energy. The spectrometer is designed with specialized detectors capable of high-precision reconstruction of final-state baryon polarizations. Among its many interesting and important measurements, H-NS will simultaneously measure hyperon and proton spin observables to explore the polarization mechanism in hadronic interactions and the spin structure of baryons. Furthermore, the use of $pA$ and $AA$ collisions will enable detailed investigations of cold and hot nuclear matter effects on spin polarization. Its physics program and detector development will significantly benefit the future Electron-ion Collider in China.

physics.ins-det↗

arXiv2026

Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC

We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. With respect to previous generations of 3D sensors, they feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level. The first run with one merged wafer layout has been completed. The design, fabrication, and characterization of the sensors are reported in this paper.

physics.ins-det↗

arXiv2026

Design and Characterization of Racetrack 3D-Trench Silicon Sensor Based on 8-Inch Process with Excellent Time Resolution

In the extreme environments of high-luminosity colliders, traditional planar silicon sensors suffer severe radiation-induced performance degradation and fail to satisfy the stringent demands of high-precision tracking and high-speed timing in particle physics. 3D silicon sensors enhance radiation hardness by shortening charge collection distance, yet conventional designs with columnar or square-cell trench electrodes exhibit non-uniform electric fields, including saddle points and low-field regions, which degrade charge collection efficiency and timing resolution. This work presents a novel racetrack 3D-trench silicon sensor with continuous racetrack electrodes surrounding a long central collection electrode, aiming to eliminate electric field inhomogeneities. For the first time, a 23 $\mu $m shallow-etched device was fabricated on an 8-inch platform, which provides a promising basis for its subsequent mass production and engineering applications. The device performance was systematically evaluated through theoretical analysis, 3D TCAD simulations, and characterization using semiconductor parameter analyzers and transient current technique (TCT) measurements. The sensor achieves leakage current below 0.2 nA, breakdown voltage above 110 V, full depletion voltage as low as a few volts, capacitance as low as 650 fF, collected charge of 4 fC, time response of about 640 ps, and time resolution of 50 ps. This large-scale manufacturable, shallow-etched racetrack 3D-trench silicon sensor provides a competitive device solution for portable radiation detection and next-generation 4D tracking under high-radiation and high-event-rate conditions.

physics.ins-det↗

arXiv2025

Performance of USTC first batch resistive AC-LGAD sensor

In this paper, the design and characterization of AC-LGAD sensors at the University of Science and Technology of China is introduced. The sensors are characterized with an infrared laser Transient Current Technique (TCT) system for evaluating signal response characteristics and spatial resolution. The temporal resolution was quantified with electrons emitted by a Sr-90 radioactive source. The spatial resolution can reach 4 {\mu}m and a temporal resolution of 48 ps is achieved

physics.ins-det↗