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L. DiCarlo

Publications and source records attributed to L. DiCarlo.

67 records · Page 4Linked to original sources

Quantum Hall conductance of two-terminal graphene devices

Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed.

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Shot Noise in Graphene

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.

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Quantum Hall Effect in a Graphene p-n Junction

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate. A functionalized Al203 oxide that adheres to graphene and does not significantly affect its electronic properties is described. Measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 3/2 times the quantum of conductance, e2/h, consistent with theory.

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Current Noise in Quantum Point Contacts

We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias, shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus (where shot noise vanishes), agrees quantitatively with a model of bias-dependent electron heating.

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Noise Correlations in a Coulomb Blockaded Quantum Dot

We report measurements of current noise auto- and cross-correlation in a tunable quantum dot with two or three leads. As the Coulomb blockade is lifted at finite source-drain bias, the auto-correlation evolves from super-Poissonian to sub-Poissonian in the two-lead case, and the cross-correlation evolves from positive to negative in the three-lead case, consistent with transport through multiple levels. Cross-correlations in the three-lead dot are found to be proportional to the noise in excess of the Poissonian value in the limit of weak output tunneling.

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Tunable Noise Cross-Correlations in a Double Quantum Dot

We report measurements of the cross-correlation between current noise fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and source-drain bias. Good agreement is found with a model of sequential tunneling through the dots in the presence of inter-dot capacitive coupling.

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A system for measuring auto- and cross-correlation of current noise at low temperatures

We describe the construction and operation of a two-channel noise detection system for measuring power and cross spectral densities of current fluctuations near 2 MHz in electronic devices at low temperatures. The system employs cryogenic amplification and fast-Fourier-transform based spectral measurement. The gain and electron temperature are calibrated using Johnson noise thermometry. Full shot noise of 100 pA can be resolved with an integration time of 10 s. We report a demonstration measurement of bias-dependent current noise in a gate defined GaAs/AlGaAs quantum point contact.

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Shot-Noise Signatures of 0.7 Structure and Spin in a Quantum Point Contact

We report simultaneous measurement of shot noise and dc transport in a quantum point contact as a function of source-drain bias, gate voltage, and in-plane magnetic field. Shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement.

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Phenomenology of the 0.7 conductance feature

We describe a phenomenological model for the conductance feature near $0.7 \times 2e^2/h$ that occurs in quantum point contacts. We focus on the transconductance at finite source-drain bias and contrast our model with the results expected from a single-particle picture. Good agreement is seen in comparing the model with experimental data, taken on ultra-low-disorder GaAs induced electron systems. Although simple, our phenomenology suggests important boundary conditions for an underlying microscopic theory.

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Zero-field splitting of Kondo resonances in a carbon nanotube quantum dot

We present low-temperature electron transport measurements on a single-wall carbon nanotube quantum dot exhibiting Kondo resonances at low temperature. Contrary to the usual behavior for the spin-1/2 Kondo effect we find that the temperature dependence of the zero bias conductance is nonmonotonic. In nonlinear transport measurements low-energy splittings of the Kondo resonances are observed at zero magnetic field. We suggest that these anomalies reflect interactions between the nanotube and a magnetic (catalyst) particle. The nanotube device may effectively act as a ferromagnetically contacted Kondo dot.

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Photovoltaic and Rectification Currents in Quantum Dots

We investigate theoretically and experimentally the statistical properties of dc current through an open quantum dot subject to ac excitation of a shape-defining gate. The symmetries of rectification current and photovoltaic current with respect to applied magnetic field are examined. Theory and experiment are found to be in good agreement throughout a broad range of frequency and ac power, ranging from adiabatic to nonadiabatic regimes.

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Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot

We report measurements of a tunable double quantum dot, operating in the quantum regime, with integrated local charge sensors. The spatial resolution of the sensors is sufficient to allow the charge distribution within the double dot system to be resolved at fixed total charge. We use this readout scheme to investigate charge delocalization as a function of temperature and strength of tunnel coupling, showing that local charge sensing allows an accurate determination of interdot tunnel coupling in the absence of transport.

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Photocurrent, Rectification, and Magnetic Field Symmetry of Induced Current Through Quantum Dots

We report mesoscopic dc current generation in an open chaotic quantum dot with ac excitation applied to one of the shape-defining gates. For excitation frequencies large compared to the inverse dwell time of electrons in the dot (i.e., GHz), we find mesoscopic fluctuations of induced current that are fully asymmetric in the applied perpendicular magnetic field, as predicted by recent theory. Conductance, measured simultaneously, is found to be symmetric in field. In the adiabatic (i.e., MHz) regime, in contrast, the induced current is always symmetric in field, suggesting its origin is mesoscopic rectification.

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