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L. Eaves

Publications and source records attributed to L. Eaves.

35 records · Page 2Linked to original sources
arXiv2010

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.

cond-mat.mtrl-sci↗
arXiv2010

Optical imaging of resonant electrical carrier injection into individual quantum dots

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.

cond-mat.mes-hall↗
arXiv2010

Vibrations of a diamagnetically levitated water droplet

We measure the frequencies of small-amplitude shape oscillations of a magnetically-levitated water droplet. The droplet levitates in a magnetogravitational potential trap. The restoring forces of the trap, acting on the droplet's surface in addition to the surface tension, increase the frequency of the oscillations. We derive the eigenfrequencies of the normal mode vibrations of a spherical droplet in the trap and compare them with our experimental measurements. We also consider the effect of the shape of the potential trap on the eigenfrequencies.

physics.flu-dyn↗
arXiv2009

Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot

We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current carrying channel from fully open to fully closed with a high on/off ratio (> 50). The device can be reset by means of a bias voltage pulse. These properties are of interest for charge sensitive photon counting devices.

cond-mat.mes-hall↗
arXiv2008

Polygonal excitations of spinning and levitating droplets

The shape of a weightless spinning liquid droplet is governed by the balance between the surface tension and centrifugal forces. The axisymmetric shape for slow rotation becomes unstable to a non-axisymmetric distortion above a critical angular velocity, beyond which the droplet progresses through a series of 2-lobed shapes. Theory predicts the existence of a family of 3- and 4-lobed equilibrium shapes at higher angular velocity. We investigate the formation of a triangular-shaped magnetically levitated water droplet, driven to rotate by the Lorentz force on an ionic current within the droplet. We also study equatorial traveling waves which give the droplet 3, 4 and 5-fold symmetry.

physics.flu-dyn↗
arXiv2008

Coulomb pseudogap in elastic 2D-2D electron tunneling in a quantizing magnetic field

The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental results revealing the pseudogap in the electron tunneling assisted by elastic electron scattering on disorder.

cond-mat.mes-hall↗
arXiv2007

Bifurcations and chaos in semiconductor superlattices with a tilted magnetic field

We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis.In previous work, we showed that although the applied fields are stationary,they act like a THz plane wave, which strongly couples the Bloch and cyclotron motion of electrons within the lowest miniband. As a consequence,the electrons exhibit a unique type of Hamiltonian chaos, which creates an intricate mesh of conduction channels (a stochastic web) in phase space, leading to a large resonant increase in the current flow at critical values of the applied voltage. This phase-space patterning provides a sensitive mechanism for controlling electrical resistance. In this paper, we investigate the effects of dissipation on the electron dynamics by modifying the semiclassical equations of motion to include a linear damping term. We demonstrate that even in the presence of dissipation,deterministic chaos plays an important role in the electron transport process. We identify mechanisms for the onset of chaos and explore the associated sequence of bifurcations in the electron trajectories. When the Bloch and cyclotron frequencies are commensurate, complex multistability phenomena occur in the system. In particular, for fixed values of the control parameters several distinct stable regimes can coexist, each corresponding to different initial conditions. We show that this multistability has clear, experimentally-observable, signatures in the electron transport characteristics.

cond-mat.other↗
arXiv2007

On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material.

cond-mat.mtrl-sci↗
arXiv2007

Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.

cond-mat.mes-hall↗
arXiv2006

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.

cond-mat.mes-hall↗
arXiv2005

Spin splitting of X-related donor impurity states in an AlAs barrier

We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity ground state to be g$_{I}$= 2.2 $\pm $ 0.1. We also investigate the spatial form of the electron wave function of the donor ground state, which is anisotropic in the growth plane.

cond-mat.mes-hall↗
arXiv2005

Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction

Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition $\hbarω_{LO}=m\hbarω_{C}$, where $m=1,2,3$. This renormalisation is attributed to formation of resonant magnetopolarons, i.e. mixing of high index Landau levels by strong interaction of electrons at Landau level states with LO-phonons.

cond-mat.mes-hall↗
arXiv2005

Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition

Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T.

cond-mat.mes-hall↗
arXiv2003

Surface Instabilities on Liquid Oxygen in an Inhomogeneous Magnetic Field

Liquid oxygen exhibits surface instabilities when subjected to a sufficiently strong magnetic field. A vertically oriented magnetic field gradient both increases the magnetic field value at which the pattern forms and shrinks the length scale of the surface patterning. We show that these effects of the field gradient may be described in terms of an ``effective gravity'', which in our experiments may be varied from 1g to 360g.

cond-mat.soft↗
arXiv2003

Model for Breakdown of Laminar Flow of a Quantum Hall Fluid Around a Charged Impurity: Comparison with Experiment

In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of breakdown is proposed, based on the generation of magneto-excitons when the quantum Hall fluid flows past an ionised impurity above a critical velocity. The calculated generation rate gives a voltage step height in good agreement with measurements. We also compare this model to a hydrodynamic description of breakdown.

cond-mat.mes-hall↗
arXiv2003

A Model for the Voltage Steps in the Breakdown of the Integer Quantum Hall Effect

In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of breakdown is proposed, based on the generation of magneto-excitons when the quantum Hall fluid flows past an ionised impurity above a critical velocity. The calculated generation rate gives a voltage step height in good agreement with measurements on both electron and hole gases. We also compare this model to a hydrodynamic description of breakdown.

cond-mat.mes-hall↗