arXiv subjects

L. W. Molenkamp

Publications and source records attributed to L. W. Molenkamp.

At least 91 records · Page 5Linked to original sources

arXiv2006

Optical spin pumping of modulation doped electrons probed by a two-color Kerr rotation technique

We report on optical spin pumping of modulation electrons in CdTe-based quantum wells with low intrinsic electron density (by 10^10 cm^{-2}). Under continuous wave excitation, we reach a steady state accumulated spin density of about 10^8 cm^{-2}. Using a two-color Hanle-MOKE technique, we find a spin relaxation time of 34 ns for the localized electrons in the nearly unperturbed electron gas. Independent variation of the pump and probe energies demonstrates the presence of additional non-localized electrons in the quantum well, whose spin relaxation time is substantially shorter.

cond-mat.mtrl-sci↗

arXiv2006

Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.

cond-mat.mes-hall↗

arXiv2006

Multiple transfer of angular momentum quanta from a spin-polarized hole to magnetic ions in ZnMnSe/ZnBeSe quantum wells

The magnetization kinetics in (Zn,Mn)Se/(Zn,Be)Se quantum wells has been studied on a ps-time scale after pulsed laser excitation. The magnetization induced by an external magnetic field is reduced by up to 30% during ~100 ps due to spin and energy transfer from photocarriers to Mn spin system. The giant Zeeman splitting leads to a complete spin polarization of the carriers, resulting in a strong suppression of flip-flop processes between carriers and magnetic ions. Therefore a multiple angular momentum transfer from each spin-polarized hole to the Mn ions becomes the dominant mechanism in the magnetization dynamics. A model based on spin-momentum coupling in the valence band is suggested for explaining this transfer.

cond-mat.mtrl-sci↗

arXiv2006

Electric field control of magnetization dynamics in ZnMnSe/ZnBeSe diluted-magnetic-semiconductor heterostructures

We show that the magnetization dynamics in diluted magnetic semiconductors can be controlled separately from the static magnetization by means of an electric field. The spin-lattice relaxation (SLR) time of magnetic Mn2+ ions was tuned by two orders of magnitude by a gate voltage applied to n-type modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum wells. The effect is based on providing an additional channel for SLR by a two-dimensional electron gas (2DEG). The static magnetization responsible for the giant Zeeman spin splitting of excitons was not influenced by the 2DEG density.

cond-mat.mtrl-sci↗

arXiv2006

Anomalous in-plane magneto-optical anisotropy of self-assembled quantum dots

We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates that these effects are induced by isotropic and anisotropic contributions to the heavy-hole Zeeman term, respectively. The latter is shown to be compensated by a built-in uniaxial anisotropy in a magnetic field B_c = 0.4 T, resulting in an optical response typical for symmetric quantum dots.

cond-mat.mtrl-sci↗

arXiv2005

Thermo-Electric Properties of Quantum Point Contacts

I. Introduction II. Theoretical background (Landauer-Buttiker formalism of thermo-electricity, Quantum point contacts as ideal electron waveguides, Saddle-shaped potential) III. Experiments (Thermopower, Thermal conductance, Peltier effect) IV. Conclusions

cond-mat.mes-hall↗

arXiv2005

Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells

The optical properties of two-dimensional electron gases in ZnSe/(Zn,Be)Se and ZnSe/(Zn,Be,Mg)Se modulation-doped quantum wells with electron densities up to 1.4x10^{12} cm^{-2} were studied by photoluminescence, photoluminescence excitation and reflectivity in a temperature range between 1.6 and 70 K and in external magnetic fields up to 48 T. In these structures, the Fermi energy of the two-dimensional electron gas falls in the range between the trion binding energy and the exciton binding energy. Optical spectra in this regime are shown to be strongly influenced by the Coulomb interaction between electrons and photoexcited holes. In high magnetic fields, when the filling factor of the two-dimensional electron gas becomes smaller than two, a change from Landau-level-like spectra to exciton-like spectra occurs. We attempt to provide a phenomenological description of the evolution of optical spectra for quantum wells with strong Coulomb interactions.

cond-mat.str-el↗

arXiv2005

Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room temperature which increases to 14.7% at 4.2K. The layers show clear separate switching and a small ferromagnetic coupling. A uniaxial in plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications.

cond-mat.mtrl-sci↗

arXiv2005

Quantum-dot-based optical polarization conversion

We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism.

cond-mat.mtrl-sci↗

arXiv2005

Direct observation of the Aharonov-Casher phase

Ring structures fabricated from HgTe/HgCdTe quantum wells have been used to study Aharonov-Bohm type conductance oscillations as a function of Rashba spin-orbit splitting strength. We observe non-monotonic phase changes indicating that an additional phase factor modifies the electron wave function. We associate these observations with the Aharonov-Casher effect. This is confirmed by comparison with numerical calculations of the magneto-conductance for a multichannel ring structure within the Landauer-Büttiker formalism.

cond-mat.mes-hall↗

arXiv2005

Quantitative detection of electrically injected spin accumulation in GaAs using the magneto-optical Kerr effect

Using an ultra sensitive magneto-optical Kerr rotation setup we have observed electrical spin injection from (Zn,Mn)Se into bulk GaAs and quantified the spin injection efficiency. The current induced contribution was carefully separated from possible artifacts and studied as a function of voltage and external magnetic field. Our measurements allow us to estimate the concentration of the electrically injected spins into GaAs to be approximately 0.4$\times10^{15}$cm$^{-3}$ at a reverse bias of 0.7 V.

cond-mat.mes-hall↗

arXiv2005

Spin-lattice relaxation of Mn-ions in ZnMnSe/ZnBeSe quantum wells measured under pulsed photoexcitation

The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from 10-3 down to 10-8 s, when the Mn content increases from 0.4 up to 11%. Free carriers play an important role in this dynamics. Hot carriers with excess kinetic energy contribute to heating of the Mn system, while cooling of the Mn system occurs in the presence of cold background carriers provided by modulation doping. In a Zn0.89Mn0.11Se quantum well structure, where the spin-lattice relaxation process is considerably shorter than the characteristic lifetime of nonequilibrium phonons, also the phonon dynamics and its contribution to heating of the Mn system are investigated.

cond-mat.mtrl-sci↗

arXiv2005

Thermopower of a Kondo-correlated quantum dot

The thermopower of a Kondo-correlated gate-defined quantum dot is studied using a current heating technique. In the presence of spin correlations the thermopower shows a clear deviation from the semiclassical Mott relation between thermopower and conductivity. The strong thermopower signal indicates a significant asymmetry in the spectral density of states of the Kondo resonance with respect to the Fermi energies of the reservoirs. The observed behavior can be explained within the framework of an Anderson-impurity model. Keywords: Thermoelectric and thermomagnetic effects, Coulomb blockade, single electron tunneling, Kondo-effect PACS Numbers: 72.20.Pa, 73.23.Hk

cond-mat.mes-hall↗

arXiv2005

Self Assembled II-VI Magnetic Quantum Dot as a Voltage-Controlled Spin-Filter

A key element in the emergence of a full spintronics technology is the development of voltage controlled spin filters to selectively inject carriers of desired spin into semiconductors. We previously demonstrated a prototype of such a device using a II-VI dilute-magnetic semiconductor quantum well which, however, still required an external magnetic field to generate the level splitting. Recent theory suggests that spin selection may be achievable in II-VI paramagnetic semiconductors without external magnetic field through local carrier mediated ferromagnetic interactions. We present the first experimental observation of such an effect using non-magnetic CdSe self-assembled quantum dots in a paramagnetic (Zn,Be,Mn)Se barrier.

cond-mat.mes-hall↗

arXiv2004

Spin control in heteromagnetic nanostructures

The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations in spintronic devices. In this Report we suggest and verify experimentally a concept of heteromagnetic semiconductor structures. It is based on spin diffusion between layers of the nanostructure with different magnetic properties and allows controlling the spin-switching rate for magnetic ions. A ten times increase of spin-lattice relaxation rate of magnetic Mn-ions is achieved in (Zn,Mn)Se/(Be,Mn)Te heteromagnetic structures with an inhomogeneous distribution of Mn-ions.

cond-mat.mtrl-sci↗

arXiv2004

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

cond-mat.mtrl-sci↗

arXiv2004

Band structure of semimagnetic Hg1-yMnyTe quantum wells

The band structure of semimagnetic Hg_1-yMn_yTe/Hg_1-xCd_xTe type-III quantum wells has been calculated using eight-band kp model in an envelope function approach. Details of the band structure calculations are given for the Mn free case (y=0). A mean field approach is used to take the influence of the sp-d exchange interaction on the band structure of QW's with low Mn concentrations into account. The calculated Landau level fan diagram and the density of states of a Hg_0.98Mn_0.02Te/Hg_0.3Cd_0.7Te QW are in good agreement with recent experimental transport observations. The model can be used to interpret the mutual influence of the two-dimensional confinement and the sp-d exchange interaction on the transport properties of Hg_1-yMn_yTe/Hg_1-xCd_xTe QW's.

cond-mat.mes-hall↗

arXiv2004

Manifestation of the spin-Hall effect through transport measurements in the mesoscopic regime

We study theoretically the manifestation of the spin-Hall effect in a two-dimensional electronic system with Rashba spin-orbit coupling via dc-transport measurements in realistic mesoscopic H-shape structures. The Landauer-Buttiker formalism is used to model samples with mobilities and Rashba coupling strengths of current experiments and to demonstrate the appearance of a measurable Rashba-coupling dependent voltage. This type of measurement requires only metal contacts, i.e., no magnetic elements are present. We also confirm the robustness of the intrinsic spin-Hall effect against disorder in the mesoscopic metallic regime in agreement with results of exact diagonalization studies in the bulk.

cond-mat.mes-hall↗