arXiv subjects

Lay Kee Ang

Publications and source records attributed to Lay Kee Ang.

33 records · Page 2Linked to original sources

arXiv2019

Imaging nodal knots in momentum space through topolectrical circuits

Knots are intricate structures that cannot be unambiguously distinguished with any single topological invariant. Momentum space knots, in particular, have been elusive due to their requisite finely tuned long-ranged hoppings. Even if constructed, probing their intricate linkages and topological "drumhead" surface states will be challenging due to the high precision needed. In this work, we overcome these practical and technical challenges with RLC circuits, transcending existing theoretical constructions which necessarily break reciprocity, by pairing nodal knots with their mirror image partners in a fully reciprocal setting. Our nodal knot circuits can be characterized with impedance measurements that resolve their drumhead states and image their 3D nodal structure. Doing so allows for reconstruction of the Seifert surface and hence knot topological invariants like the Alexander polynomial. We illustrate our approach with large-scale simulations of various nodal knots and an experiment that maps out the topological drumhead region of a Hopf-link.

cond-mat.mes-hall↗

arXiv2018

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface.

cond-mat.mes-hall↗

arXiv2018

Thickness dependence of space-charge-limited current in spatially disordered organic semiconductors

Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological features of the material. From a semi-classical picture, the charge transport properties are crucially determined by both the carrier mobility and the electrostatic field distribution in the material. Although the effect of disorders on carrier mobility has been widely studied, how electrostatic field distribution is distorted by the presence of disorders and its effect on charge transport remain unanswered. In this paper, we present a modified space-charge-limited current (SCLC) model for spatially disordered organic semiconductors based on the fractional-dimensional electrostatic framework. We show that the thickness dependence of SCLC is related to the spatial disorder in organic semiconductors. For trap-free transport, the SCLC exhibits a modified thickness scaling of $J\propto L^{-3\alpha}$, where the fractional-dimension parameter $\alpha$ accounts for the spatial disorder in organic semiconductors. The trap-limited and field-dependent mobility are also shown to obey an $\alpha$-dependent thickness scaling. The modified SCLC model shows a good agreement with several experiments on spatially disordered organic semiconductors. By applying this model to the experimental data, the standard charge transport parameters can be deduced with better accuracy than by using existing models.

physics.app-ph↗

arXiv2017

Design of an optimized $\text{MoS}_2$-based highly sensitive near-infrared surface plasmon resonance imaging biosensor

A surface plasmon resonance imaging biosensor based on $\text{MoS}_2$ deposited on Aluminium substrate is designed for high imaging sensitivity and detection accuracy. The proposed biosensor exhibits better performance than graphene-based biosensor in the near-infrared regime. A high imaging sensitivity of more than 970 $\text{RIU}^{-1}$ is obtained at the wavelength of 1540 nm. The effect of aluminium thickness, number of $\text{MoS}_2$ layers and the refractive index of sensing layer are investigated to obtain an optimized design for high sensor performance. In addition, the sensor performance comparison of $\text{MoS}_2$ and other two-dimensional transition metal dichalcogenide materials based biosensor in the near-infrared regime are also presented. The designed $\text{MoS}_2$ mediated surface plasmon resonance imaging biosensor could provide potential applications in surface plasmon resonance imaging detection of multiple biomolecular interactions simultaneously.

cond-mat.mes-hall↗

arXiv2017

Adiabatic control of surface plasmon-polaritons in a 3-layers graphene curved configuration

In this paper, we utilize coupled mode theory (CMT) to model the coupling between surface plasmon-polaritons (SPPs) between multiple graphene sheets. By using the Stimulated Raman Adiabatic Passage (STIRAP) Quantum Control Technique, we propose a novel directional coupler based on SPPs evolution in three layers of graphene sheets in some curved configuration. Our calculated results show that the SPP can be transferred efficiently from the input graphene sheet to the output graphene sheet, and the coupling is also robust that it is not sensitive to the length of the device.

quant-ph↗

arXiv2017

A new coupling mechanism between two graphene electron waveguides for ultrafast switching

We propose a novel ultrafast electronic switching device based on dual-graphene electron waveguides, in analogy to the optical dual-channel waveguide device. The design utilizes the principle of coherent quantum mechanical tunneling of Rabi oscillations between the two graphene electron waveguides. Based on a modified coupled mode theory, we construct a theoretical model to analyse the device characteristics, and predict that the swtiching speed is faster than 1 ps. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the normal semiconductor quantum-well structure. The layout of the our design is similar to that of a standard CMOS transistor that should be readily fabricated with current state-of-art nanotechnology.

quant-ph↗

arXiv2015

Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation

Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.

cond-mat.mes-hall↗

arXiv2015

High-Efficiency Van Der Waals heterostructure Thermionic Device With Graphene Electrodes

In this paper, we propose van del Waals heterostructure-based thermionic devices for the applications in cooling and power generation in the temperature range of 300 to 400 K. By using two-dimensional materials of low cross-plane thermal conductivity as the barrier materials and graphene as electrodes, our calculation demonstrates that our proposed device will have a higher efficiency as compared to other methods such as thermoelectric device and the traditional thermionic devices. By using the parameters within the current technology, we predict a cooling capability at more than 50$\%$ of the Carnot efficiency, and a 10 to 20 $\%$ efficiency in harvesting the wasted heat at 400 K.

cond-mat.mes-hall↗

arXiv2015

Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

cond-mat.mes-hall↗

arXiv2014

Waveguide engineering of graphene's nonlinearity

Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's nonlinearity, we are able to dramatically increase the nonlinear parameter and decrease the switching optical power to sub-watt levels. Our design makes use of the hybrid plasmonic waveguide and careful manipulation of graphene's refractive index by tuning its Fermi level. The ability to tailor the nonlinear parameter in graphene based waveguides via the Fermi level provides a paradigm of nonlinear optics devices to be realized.

cond-mat.mes-hall↗

arXiv2014

Electro-optical graphene plasmonic logic gates

The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/AND, NAND/OR, XNOR/XOR) achieved not only ultracompact size lengths of less than {\lambda}/28 with respect to the operating wavelength of 10 {\mu}m, but also a minimum extinction ratio as high as 15 dB. These graphene plasmonic logic gates are potential building blocks for future nanoscale midinfrared photonic integrated circuits.

cond-mat.mes-hall↗

arXiv2013

Design of a Monopole Antenna Based Resonant Nanocavity for Detection of Optical Power from Hybrid Plasmonic Waveguides

A novel plasmonic waveguide-coupled nanocavity with a monopole antenna is proposed to localize the optical power from a hybrid plasmonic waveguide and subsequently convert it into electrical current. The nanocavity is designed as a Fabry-P\'erot waveguide resonator, while the monopole antenna is made of a metallic nanorod directly mounted onto the metallic part of the waveguide terminal which acts as the conducting ground. The nanocavity coincides with the antenna feed sandwiched in between the antenna and the ground. Maximum power from the waveguide can be coupled into, and absorbed in the nanocavity by means of the field resonance in the antenna as well as in the nanocavity. Simulation results show that 42% optical power from the waveguide can be absorbed in a germanium filled nanocavity with a nanoscale volume of 220x150x60nm$^3$. The design may find applications in nanoscale photo-detection, subwavelength light focusing and manipulating, as well as sensing.

cond-mat.mes-hall↗

arXiv2013

Plasmonic coupled-cavity system for enhancement of surface plasmon localization in plasmonic detectors

A plasmonic coupled-cavity system, which consists of a quarter-wave coupler cavity, a resonant Fabry-Perot detector nanocavity, and an off-resonant reflector cavity, is used to enhance the localization of surface plasmons in a plasmonic detector. The coupler cavity is designed based on transmission line theory and wavelength scaling rules in the optical regime, while the reflector cavity is derived from off-resonant resonator structures to attenuate transmission of plasmonic waves. We observed strong coupling of the cavities in simulation results, with an 86% improvement of surface plasmon localization achieved. The plasmonic coupled-cavity system may find useful applications in areas of nanoscale photodetectors, sensors, and an assortment of plasmonic-circuit devices.

cond-mat.mes-hall↗

arXiv2013

Mid-infrared Active Graphene Nanoribbon Plasmonic Waveguide Devices

Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP) wavelength. In this paper, we design active plasmonic waveguide devices based on electrical-modulation of doped graphene nanoribbons (GNRs) on a voltage-gated inhomogeneous dielectric layer. We first develop figure-of-merit (FoM) formulae to characterize the performance of passive and active graphene nanoribbon waveguides. Based on the FoMs, we choose optimal GNRs to build a plasmonic shutter, which consists of a GNR placed on top of an inhomogeneous SiO$_2$ substrate supported by a Si nanopillar. Simulation studies show that for a simple 50nm-long plasmonic shutter, the modulation contrast can exceed 30dB. The plasmonic shutter is further extended to build a 4-port active power splitter and an 8-port active network, both based on GNR cross-junction waveguides. For the active power splitter, the GSP power transmission at each waveguide arm can be independently controlled by an applied gate-voltage with high modulation contrast and nearly-equal power-splitting proportions. From the construct of the 8-port active network, we see that it is possible to scale up the GNR cross-junction waveguides into large and complex active waveguide networks, showing great potential in an exciting new area of mid-infrared graphene plasmonic integrated nanocircuits.

cond-mat.mes-hall↗

arXiv2013

Ultracompact Vanadium Dioxide Dual-Mode Plasmonic Waveguide Electroabsorption Modulator

Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO$_2$-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the "on" state and high-loss VO$_2$ layer during the "off" state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10dB with an active size of only 200x50x220nm$^3$ (or ~{\lambda}$^3$/1700), requiring a drive-voltage of ~4.6V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology.

cond-mat.mes-hall↗