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Luca Menzio

Publications and source records attributed to Luca Menzio.

12 recordsLinked to original sources

Novel Strip-like Readout Geometries in Resistive AC-coupled Silicon Detectors (RSD / AC-LGAD)

Resistive Silicon Detectors (RSD/AC-LGAD) are novel silicon detectors capable of both precise spatial and temporal resolution. Such sensors will be essential for the next generation of particle colliders (EIC, FCC-ee, CEPC, FCC-hh) and would enable the possibility of a 4D tracker. RSD sensors are typically fabricated with a pixel-like geometry that provides excellent spatial resolution in the x and y directions. However, in regions further from the interaction point, high spatial resolution in one direction (strip-like geometry) is often preferred to reduce the number of readout channels. For example, strip AC-LGADs are now the default option for the US electron ion collider (EIC). The second production of RSD sensors by Fondazione Bruno Kessler includes sensors with unconventional readout pad shapes that act as a mixture between strip-like and pixel-like readout. This work presents the first characterization of these new pad designs using the Transient Current Technique (TCT). The measurements demonstrate exceptional one-dimensional spatial resolution, confirming the potential of novel strip-like RSDs for future tracking systems.

physics.ins-det

Proton Energy Dependence of Radiation Induced Low Gain Avalanche Detector Degradation

Low Gain Avalanche Detectors (LGADs) are key components for precise timing measurements in high-energy physics experiments, including the High Luminosity upgrades of the current LHC detectors. Their performance is, however, limited by radiation induced degradation of the gain layer, primarily driven by acceptor removal. This study presents a systematic comparison of how the degradation evolves with different incident proton energies, using LGADs from Hamamatsu Photonics (HPK) and The Institute of Microelectronics of Barcelona (IMB-CNM) irradiated with 18 MeV, 24 MeV, 400 MeV and 23 GeV protons and fluences up to 2.5x10^15 p/cm2. Electrical characterization is used to extract the acceptor removal coefficients for different proton energies, whereas IR TCT measurements offer complementary insight into the gain evolution in LGADs after irradiation. Across all devices, lower energy protons induce stronger gain layer degradation, confirming expectations. However, 400 MeV protons consistently appear less damaging than both lower and higher energy protons, an unexpected deviation from a monotonic energy trend. Conversion of proton fluences to 1 MeV neutron-equivalent fluences reduces but does not eliminate these differences, indicating that the standard Non-Ionizing Energy Loss (NIEL) scaling does not fully account for the underlying defect formation mechanisms at different energies and requires revision when considering irradiation fields that contain a broader spectrum of particle types and energies.

physics.ins-det

Gain-Layer Project

Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is destroyed is not available on a defect level. Only measurements for materials with much lower effective doping concentrations are available. The direct study of the gain-layer is not possible with typical defect spectroscopy measurements like Thermally Stimulated Currents (TSC) and Deep-Level Transient Spectroscopy (DLTS). To combat this problem and gain a better understanding of the processes which degrade LGADs, the Gain-Layer Project was started. This project produced 19050 diodes with various Boron, Phosphorus, Oxygen and Carbon concentrations. The material used is low-resistivity p-type Silicon. The effective doping concentrations are in the order of a LGAD gain-layer. These diodes will serve the defect community in the coming years for various studies. This article introduces this project with detailed descriptions of the diodes, their flavours and their processing, and reports on results from I-V, C-V, SIMS and DLTS measurements on unirradiated diodes.

physics.ins-det

Timing resolution from beam tests on thin LGADs down to 16.6 ps

The paper reports on the timing resolution achieved with Low-Gain Avalanche Diodes (LGADs), optimised for extreme-fluence conditions, at the DESY Test Beam Facility using 4~GeV/c electrons. The LGADs adopt an $n$-in-$p$ technology with a $p^{+}$-type boron gain implant, co-implanted with carbon to mitigate acceptor deactivation due to irradiation. The substrate thickness of the sensors varies from 20 to 45~\micron, with an active area spanning from 0.75~$\times$~0.75 to 1.28~$\times$~1.28~mm$^{2}$. The experimental setup consisted of a 45~\micron-thick trigger sensor with an active area of 3.6~$\times$~3.6~mm$^{2}$, two device-under-test (DUT) planes, and a Photonis micro-channel plate photomultiplier tube (MCP) as a time reference. Data taking was performed at the ambient temperature of the facility, at 18$^{\circ}$C. The gain was measured between 7 and 40 across all non-irradiated sensors in the study. The timing resolution was calculated from a Gaussian fitting of the difference in times of arrival of a particle at the DUT and the MCP, using the constant fraction discriminator technique. A timing resolution of 26.4~\ps was achieved in 45~\micron-thick sensors, down to 16.6~\ps in 20~\micron-thick sensors, in the non-irradiation study. The combination of two 20~\micron-thick LGADs reached a timing resolution of 12.2~\ps. A set of 30~\micron-thick sensors irradiated with neutrons at fluences between 0.4~$\times$~10$^{15}$ and 2.5~$\times$~10$^{15}$~\mevneut were tested in the beam. These irradiated sensors achieved a gain between 7 and 30 using a similar apparatus but cooled with solidified CO$_{2}$ to -42$^{\circ}$C. A timing resolution of 20~\ps was obtained in these irradiated sensors.

physics.ins-det

Design and optimisation of radiation resistant AC- and DC-coupled resistive LGADs

Future high-energy physics experiments require a paradigm shift in radiation detector design. In response to this challenge, resistive LGADs that combine Low Gain Avalanche Diode technology with resistive readout have been developed. The prototypes created so far, employing AC-coupled contacts, have demonstrated impressive performance, achieving a temporal resolution of 38 ps and a spatial resolution of 15 $\mu$m with a pixel pitch of 450 $\mu$m. To tackle some of the issues encountered up to this point, particularly the non-uniform response across the entire surface of the detector, a new version with DC-coupled contacts has recently been developed. The Synopsys Sentaurus TCAD simulations that have guided the design of their first production, released by the Fondazione Bruno Kessler in November 2024, will be presented below along with a concise summary of the history of the prototypes with AC-coupled contacts.

physics.ins-det

Irradiation Studies of the Resistive AC-coupled Silicon Detector (RSD/AC-LGAD)

Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where timing information can be used along with spatial hits during track finding. 4D tracking will be an essential part of any future lepton or hadron collider and may even be feasible at the HL-LHC. For applications at hadron colliders, RSD sensors must be able to operate in high fluence environments in order to provide 4D tracking. However, the effects of radiation on RSDs have not been extensively studied. In this study, RSDs were irradiated to $1.0$, $2.0$, and $3.5 \times 10^{15}$~cm$^{-2}$ (1~MeV neutron equivalents) with both protons and neutrons. The sensors were then characterized electrically to study the acceptor removal and, for the first time in this doping concentration range, the donor removal. Then, the Transient Current Technique was used to begin investigating the signal charge sharing after irradiation. The results suggest an interesting trend between acceptor and donor removal, which is worthy of further study and could assist in improving radiation hardness of Low Gain Avalanche Diodes (LGADs).

physics.ins-det

A Compensated Design of the LGAD Gain Layer

In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.

physics.ins-det

Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $\mu m$ for 200-$\mu m$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained with machine learning algorithms.

physics.ins-det

Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors

In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $\beta$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge.

physics.ins-det

First Results with the ANET Compact Thermal Neutron Collimator

This paper presents the first determination of the spatial resolution of the ANET Compact Neutron Collimator, obtained with a measuring campaign at the LENA Mark-II TRIGA reactor in Pavia. This novel collimator consists of a sequence of collimating and absorbing channels organised in a chessboard-like geometry. It has a scalable structure both in length and in the field of view. It is characterized by an elevated collimation power within a limited length. Its scalability and compactness are added values with respect to traditional collimating system. The prototype tested in this article is composed of 4 concatenated stages, each 100mm long, with a channel width of 2.5mm, delivering a nominal L/D factor of 160. This measuring campaign illustrates the use of the ANET collimator and its potential application in neutron imaging for facilities with small or medium size neutron sources.

physics.ins-det

Design of a novel compact neutron collimator

In this work the concept of a novel slow neutron collimator and the way to operate it are presented. The idea is based on the possibility to decouple the device field-of-view from its collimation power. A multi-channel geometry is proposed consisting of a chess-board structure where highly neutron-absorbing channels are alternated to air channels. A borated polymer was purposely developed to produce the attenuating components in the form of square-sectioned long rods. A scalable structure consisting of multiple collimation sectors can be arranged. The geometrical parameter LD, corresponding to the ratio between the length of a channel and its width, defines the collimation power. Several sectors can be arranged one after the other to reach relevant collimation powers. Each sector, 100 mm long, is composed by several channels with D = 2.5 mm corresponding to an L/D coefficient of 40. The target field of view is 50x50 mm2. This novel collimator, developed inside the INFN-ANET collaboration, due to its intrinsic compactness, will be of great importance to enhance the neutron imaging capability of small to medium-size neutron sources.

physics.ins-det

The e_LiBANS facility: a new compact thermal neutron source based on a medical electron LINAC

A new photonuclear thermal neutron facility has been developed at the Physics Department of University of Torino. The facility is based on a medical electron LINAC coupled to a compact converter and moderator assembly. A homogenous thermal neutron field of the order of 10$^6$ cm$^{-2}$s$^{-1}$ is achievable in the enclosed irradiation cavity with low gamma and fast neutron contaminations. Its intensity can be tuned varying the LINAC current. These characteristics make the source appropriate for several applications like detectors development, material studies and BNCT preclinical research. This work describes the project and the experimental characterization of the facility. This includes the measurement of the thermal neutron fluence rate, the determination of the neutron energy spectrum and of the thermal neutron field uniformity and the evaluation of the gamma contamination.

physics.app-ph