arXiv subjects

M. Di Ventra

Publications and source records attributed to M. Di Ventra.

At least 55 records · Page 3Linked to original sources

arXiv2012

Lagrange formalism of memory circuit elements: classical and quantum formulations

The general Lagrange-Euler formalism for the three memory circuit elements, namely, memristive, memcapacitive, and meminductive systems, is introduced. In addition, {\it mutual meminductance}, i.e. mutual inductance with a state depending on the past evolution of the system, is defined. The Lagrange-Euler formalism for a general circuit network, the related work-energy theorem, and the generalized Joule's first law are also obtained. Examples of this formalism applied to specific circuits are provided, and the corresponding Hamiltonian and its quantization for the case of non-dissipative elements are discussed. The notion of {\it memory quanta}, the quantum excitations of the memory degrees of freedom, is presented. Specific examples are used to show that the coupling between these quanta and the well-known charge quanta can lead to a splitting of degenerate levels and to other experimentally observable quantum effects.

cond-mat.mes-hall↗

arXiv2011

Teaching Memory Circuit Elements via Experiment-Based Learning

The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in solving diverse problems in analog/neuromorphic and digital/quantum computation; the possibility to use them in an integrated computing-memory paradigm, massively-parallel solution of different optimization problems, learning, neural networks, etc. The time is therefore ripe to introduce these elements to the next generation of physicists and engineers with appropriate teaching tools that can be easily implemented in undergraduate teaching laboratories. In this paper, we suggest the use of easy-to-build emulators to provide a hands-on experience for the students to learn the fundamental properties and realize several applications of these memelements. We provide explicit examples of problems that could be tackled with these emulators that range in difficulty from the demonstration of the basic properties of memristive, memcapacitive, and meminductive systems to logic/computation and cross-bar memory. The emulators can be built from off-the-shelf components, with a total cost of a few tens of dollars, thus providing a relatively inexpensive platform for the implementation of these exercises in the classroom. We anticipate that this experiment-based learning can be easily adopted and expanded by the instructors with many more case studies.

physics.ins-det↗

arXiv2011

Biologically-Inspired Electronics with Memory Circuit Elements

Several abilities of biological systems, such as adaptation to natural environment, or of animals to learn patterns when appropriately trained, are features that are extremely useful, if emulated by electronic circuits, in applications ranging from robotics to solution of complex optimization problems, traffic control, etc. In this chapter, we discuss several examples of biologically-inspired circuits that take advantage of memory circuit elements, namely, electronic elements whose resistive, capacitive or inductive characteristics depend on their past dynamics. We provide several illustrations of what can be accomplished with these elements including learning circuits and related adaptive filters, neuromorphic and cellular computing circuits, analog massively-parallel computation architectures, etc. We also give examples of experimental realizations of memory circuit elements and discuss opportunities and challenges in this new field.

q-bio.NC↗

arXiv2011

Analog-to-Digital and Digital-to-Analog Conversion with Memristive Devices

We suggest a novel methodology to obtain a digital representation of analog signals and to perform its back-conversion using memristive devices. In the proposed converters, the same memristive systems are used for two purposes: as elements performing conversion and elements storing the code. This approach to conversion is particularly relevant for interfacing analog signals with memristive digital logic/computing circuits.

physics.ins-det↗

arXiv2011

Reconfigurable Gradient Index using VO2 Memory Metamaterials

We demonstrate tuning of a metamaterial device that incorporates a form of spatial gradient control. Electrical tuning of the metamaterial is achieved through a vanadium dioxide layer which interacts with an array of split ring resonators. We achieved a spatial gradient in the magnitude of permittivity, writeable using a single transient electrical pulse. This induced gradient in our device is observed on spatial sc ales on the order of one wavelength at 1 THz. Thus, we show the viability of elements for use in future devices with potential applications in beamforming and communications

cond-mat.mes-hall↗

arXiv2011

Quantum Spinon Oscillations

The full quantum dynamics of a spinon under external magnetic fields is investigated by using the time-evolving block decimation (TEBD) method within the microcanonical picture of transport. We show that the center of the spinon oscillates back and forth in the absence of dissipation. The quantum many-body behavior can be understood in a single-particle picture of transport and Bloch oscillations, where quantum fluctuations induce finite life times. Transport, oscillations and lifetimes can be tuned to some degree separately by external fields. Other nontrivial dynamics such as resonance as well as chaos have also been discussed.

cond-mat.str-el↗

arXiv2011

Chaotic memristor

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincaré plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.

cond-mat.mes-hall↗

arXiv2010

Memory circuit elements: from systems to applications

In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their modeling and applications ranging from analog programming to biological systems. Since the phenomena associated with memory are ubiquitous at the nanoscale, we expect the interest in these circuit elements to increase in coming years.

cond-mat.mes-hall↗

arXiv2009

Thermo-spin effects in a quantum dot connected to ferromagnetic leads

We study a system composed of a quantum dot in contact with ferromagnetic leads, held at different temperatures. Spin analogues to the thermopower and thermoelectric figures of merit are defined and studied as a function of junction parameters. It is shown that in contrast to bulk ferromagnets, the spin thermopower coefficient in a junction can be as large as the Seebeck coefficient, resulting in a large spin figure of merit. In addition, it is demonstrated that the junction can be tuned to supply only spin current but no charge current. We also discuss experimental systems where our predictions can be verified.

cond-mat.mes-hall↗

arXiv2009

Fourier's Law: insight from a simple derivation

The onset of Fourier's law in a one-dimensional quantum system is addressed via a simple model of weakly coupled quantum systems in contact with thermal baths at their edges. Using analytical arguments we show that the crossover from the ballistic (invalid Fourier's law) to diffusive (valid Fourier's law) regimes is characterized by a thermal length-scale, which is directly related to the profile of the local temperature. In the same vein, dephasing is shown to give rise to a classical Fourier's law, similarly to the onset of Ohm's law in mesoscopic conductors.

cond-mat.stat-mech↗

arXiv2009

Information compressibility, entropy production and approach to steady state in open systems

We introduce the concept of {\em information compressibility}, $K_I$, which measures the relative change of number of available microstates of an open system in response to an energy variation. We then prove that at the time in which the system reaches a steady state, the second and third time derivatives of the information entropy are proportional to the corresponding time derivatives of the energy, the proportionality constant being $K_I$. We argue that if two steady states with different but same-sign $K_I$ are dynamically connected in a non-adiabatic way it takes a longer time to reach the state with compressibility closer to zero than the reverse. This concept, that applies to both classical and quantum open systems, thus provides insight into the properties of non-equilibrium steady states.

cond-mat.stat-mech↗

arXiv2008

Frequency doubling and memory effects in the Spin Hall Effect

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.

cond-mat.mes-hall↗

arXiv2008

Relaxation times in an open interacting two-qubit system

In a two-qubit system the coupling with an environment affects considerably the entanglement dynamics, and usually leads to the loss of entanglement within a finite time. Since entanglement is a key feature in the application of such systems to quantum information processing, it is highly desirable to find a way to prolonging its lifetime. We present a simple model of an interacting two-qubit system in the presence of a thermal Markovian environment. The qubits are modeled as interacting spin-$\half$ particles in a magnetic field and the environment is limited to inducing single spin-flip events. A simple scheme allows us to calculate the relaxation rates for all processes. We show that the relaxation dynamics of the most entangled state exhibit critical slowing down as a function of the magnetic field, where the relaxation rate changes from exponentially small values to finite values in the zero-temperature limit. We study the effect of temperature and magnetic field on all the other relaxation rates and find that they exhibit unusual properties, such as non-monotonic dependence on temperature and a discontinuity as a function of magnetic field. In addition, a simple scheme to include non-Markovian effects is presented and applied to the two-qubit model. We find that the relaxation rates exhibit a sharp, cusp-like resonant structure as a function of the environment memory-time, and that for long memory-times all the different relaxation rates merge into a single one.

quant-ph↗

arXiv2008

Theory of non-equilibrium thermoelectric effects in nanoscale junctions

Despite its intrinsic non-equilibrium origin, thermoelectricity in nanoscale systems is usually described within a static scattering approach which disregards the dynamical interaction with the thermal baths that maintain energy flow. Using the theory of open quantum systems we show instead that unexpected properties, such as a resonant structure and large sign sensitivity, emerge if the non-equilibrium nature of this problem is considered. Our approach also allows us to define and study a local temperature, which shows hot spots and oscillations along the system according to the coupling of the latter to the electrodes. This demonstrates that Fourier's law -- a paradigm of statistical mechanics -- is violated at the nanoscale.

cond-mat.mes-hall↗

arXiv2008

Effective single-particle order-N scheme for the dynamics of open non-interacting many-body systems

Quantum master equations are common tools to describe the dynamics of many-body systems open to an environment. Due to the interaction with the latter, even for the case of non-interacting electrons, the computational cost to solve these equations increases exponentially with the particle number. We propose a simple scheme, that allows to study the dynamics of $N$ non-interacting electrons taking into account both dissipation effects and Fermi statistics, with a computational cost that scales linearly with $N$. Our method is based on a mapping of the many-body system to a specific set of effective single-particle systems. We provide detailed numerical results showing excellent agreement between the effective single-particle scheme and the exact many-body one, as obtained from studying the dynamics of two different systems. In the first, we study optically-induced currents in quantum rings at zero temperature, and in the second we study a linear chain coupled at its ends to two thermal baths with different (finite) temperatures. In addition, we give an analytical justification for our method, based on an exact averaging over the many-body states of the original master equations.

cond-mat.other↗

arXiv2008

Stochastic time-dependent current-density functional theory: a functional theory of open quantum systems

The dynamics of a many-body system coupled to an external environment represents a fundamentally important problem. To this class of open quantum systems pertains the study of energy transport and dissipation, dephasing, quantum measurement and quantum information theory, phase transitions driven by dissipative effects, etc. Here, we discuss in detail an extension of time-dependent current-density-functional theory (TDCDFT), we named stochastic TDCDFT [Phys. Rev. Lett. {\bf 98}, 226403 (2007)], that allows the description of such problems from a microscopic point of view. We discuss the assumptions of the theory, its relation to a density matrix formalism, and the limitations of the latter in the present context. In addition, we describe a numerically convenient way to solve the corresponding equations of motion, and apply this theory to the dynamics of a 1D gas of excited bosons confined in a harmonic potential and in contact with an external bath.

cond-mat.str-el↗

arXiv2008

Spin memristive systems

Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behaviour is based entirely on the electron spin degree of freedom which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behaviour. Our scheme is fundamentally different from previously discussed schemes of memristive devices and broadens the possible range of applications of semiconductor spintronics.

cond-mat.mes-hall↗

arXiv2007

Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.

cond-mat.mes-hall↗