arXiv subjects

M. Grayson

Publications and source records attributed to M. Grayson.

29 records · Page 2Linked to original sources

arXiv2004

Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures

We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly auto-compensated doping is first characterized in bulk samples, identifying the metal-insulator transition density and confirming classic hopping conduction in the insulating regime. To overcome the poor morphology inherent to Si p-type (110) growth, heterostructures are fabricated with only the modulation doping layer grown under p-type conditions. Such heterostructures show a hole mobility of 1.75x10^2 cm^2/Vs at density p=2.4x10^11 cm^-2. We identify the zero field spin-splitting characteristic of p-type heterostructures, but observe a remarkably isotropic mobility and a persistent photoconductivity unusual for p-heterojunctions grown using other doping techniques. This new modulated growth technique is particularly relevant for p-type cleaved-edge overgrowth and for III-V growth chambers where Si is the only dopant.

cond-mat.mes-hall↗

arXiv2004

Measuring carrier density in parallel conduction layers of quantum Hall systems

An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel conduction in the modulation-doped layer, this analysis quantitatively determines the charge density in the doping layer and can be used to estimate the mobility. To illustrate one application, experimental data show magnetic freeze-out of parallel conduction in a modulation doped heterojunction. As another example, the carrier density of a minimally populated second subband in a two-subband quantum well is determined. A simple formula is derived that can estimate the carrier density in a highly resistive parallel layer from a single Hall measurement of the total system.

cond-mat.mes-hall↗

arXiv2004

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.

cond-mat.mes-hall↗

arXiv2004

The structure of a single sharp quantum Hall edge probed by momentum-resolved tunneling

Momentum resolved magneto-tunnelling spectroscopy is performed at a single sharp quantum Hall edge. We directly probe the structure of individual integer quantum Hall (QH) edge modes, and find that an epitaxially overgrown cleaved edge realizes the sharp edge limit, where the Chklovskii picture relevant for soft etched or gated edges is no longer valid. The Fermi wavevector in the probe quantum well probes the real-space position of the QH edge modes, and reveals inter-channel distances smaller than both the magnetic length and the Bohr radius. We quantitatively describe the lineshape of principal conductance peaks and deduce an edge filling factor from their position consistent with the bulk value. We observe features in the dispersion which are attributed to fluctuations in the ground energy of the quantum Hall system.

cond-mat.mes-hall↗

arXiv2003

Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.

cond-mat.mes-hall↗

arXiv2003

Probing the Electrostatics of Integer Quantum Hall Edges with Momentum-Resolved Tunnel Spectroscopy

We present measurements of momentum-resolved magneto-tunneling from a perpendicular two-dimensional (2D) contact into integer quantum Hall (QH) edges at a sharp edge potential created by cleaved edge overgrowth. Resonances in the tunnel conductance correspond to coincidences of electronic states of the QH edge and the 2D contact in energy-momentum space. With this dispersion relation reflecting the potential distribution at the edge we can directly measure the band bending at our cleaved edge under the influence of an external voltage bias. At finite bias we observe significant deviations from the flat-band condition in agreement with self-consistent calculations of the edge potential.

cond-mat↗

arXiv2002

The mid-infrared AC Hall effect in optimally-doped BSCCO

A novel heterodyne polarimetry system determines the frequency dependence from 900 to 1100 cm^-1 and temperature dependence from 35 to 330 K of the Hall transport in single crystal, optimally doped BSCCO. The results show a significant disconnect from the behavior of the Hall angle in the existing data for YBCO in the far-infrared, which indicate a negative value for the real part of the Hall angle above 250 cm^-1, whereas that of the current work at 1000 cm^-1 is positive. The current work when analyzed using an extended Drude formalism results in a Hall mass comparable to the ARPES Fermi mass and a scattering rate comparable to the low frequency conductivity and Hall effect scattering rates, which, however, are only 1/4 of the ARPES values.

cond-mat.supr-con↗

arXiv2002

Spectral measurement of the Hall angle response in normal state cuprate superconductors

We measure the temperature and frequency dependence of the complex Hall angle for normal state YBa$_2$Cu$_3$O$_7$ films from dc to far-infrared frequencies (20-250 cm$^{-1}$) using a new modulated polarization technique. We determine that the functional dependence of the Hall angle on scattering does not fit the expected Lorentzian response. We find spectral evidence supporting models of the Hall effect where the scattering $Γ_H$ is linear in T, suggesting that a single relaxation rate, linear in temperature, governs transport in the cuprates.

cond-mat.supr-con↗

arXiv2001

Fermi liquid to Luttinger liquid transition at the edge of a two-dimensional electron gas

We present experimental results on the tunneling into the edge of a two dimensional electron gas (2DEG) obtained with a GaAs/AlGaAs cleaved edge overgrown structure in a strong perpendicular magnetic field. While the 2DEG exhibits typical fractional quantum Hall features of a very high mobility sample, we observe the onset of a non-linear current-voltage characteristic in the vicinity of nu=1. For filling factor nu<1 the system is consistent with a non-Fermi liquid behavior, such as a Luttinger liquid, whereas for nu>1 we observe an Ohmic tunneling resistance between the edge and a three dimensional contact, typical for a Fermi liquid. Hence, at the edge, there is a transition from a Luttinger liquid to a Fermi liquid. Finally, we show that the Luttinger liquid exponent at a given filling factor is not universal but depends on sample parameters.

cond-mat.mes-hall↗

arXiv1999

Infrared Hall effect in high Tc superconductors: Evidence for non-Fermi liquid Hall scattering

Infrared (20-120 cm-1 and 900-1100 cm-1) Faraday rotation and circular dichroism are measured in high Tc superconductors using sensitive polarization modulation techniques. Optimally doped YBCO thin films are studied at temperatures down to 15 K and magnetic fields up to 8 T. At 1000 cm-1 the Hall conductivity varies strongly with temperature in contrast to the longitudinal conductivity which is nearly independent of temperature. The Hall scattering rate has a T^2 temperature dependence but, unlike a Fermi liquid, depends only weakly on frequency. The experiment puts severe constraints on theories of transport in the normal state of high Tc superconductors.

cond-mat.supr-con↗

arXiv1999

Mid-infrared Hall effect in thin-film metals: Probing the Fermi surface anisotropy in Au and Cu

A sensitive mid-infrared (MIR, 900-1100 cm-1, 112-136 meV) photo-elastic polarization modulation technique is used to measure simultaneously Faraday rotation and circular dichroism in thin metal films. These two quantities determine the complex AC Hall conductivity. This novel technique is applied to study Au and Cu thin films at temperatures down to 20 K and magnetic fields up to 8 T. The Hall frequency is consistent with band theory predictions. We report the first measurement of the MIR Hall scattering rate, which is significantly lower than that derived from Drude analysis of zero magnetic field MIR transmission measurements. This difference is qualitatively explained in terms of the anisotropy of the Fermi surface in Au and Cu.

cond-mat.mtrl-sci↗