arXiv subjects

M. Kawasaki

Publications and source records attributed to M. Kawasaki.

At least 109 records · Page 6Linked to original sources

arXiv2007

In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations

We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.

cond-mat.str-el↗

arXiv2007

Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La$_{1-x}$Sr$_{x}$MnO$_{3}$

We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi level ($E_{F}$) to the lower Hubbard band, whereas a pseudogap behavior also exists in the ARPES spectra in the close vicinity of $E_{F}$ for the metallic LSMO. These results indicate that the spectral weight transfer derived from strong electron-electron interaction dominates the gap formation in LSMO associated with the filling-control MI transition.

cond-mat.str-el↗

arXiv2007

Optical probe of electrostatic doping in an n-type Mott insulator

Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping (presumably up to 6% per Cu atom) to the Mott insulator. The electro-modulation absorption spectroscopy could clearly show a large modification of the Mott-gap state accompanying the spectral weight transfer to the lower-energy region, reminiscent of formation of a metallic state.

cond-mat.str-el↗

arXiv2006

Shifting donor-acceptor photoluminescence in N-doped ZnO

We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.

cond-mat.mtrl-sci↗

arXiv2006

Hole Transport in p-Type ZnO

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

cond-mat.mtrl-sci↗

arXiv2006

Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices

We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (~ 1000 C), which leads to Sr/La atomic interdiffusion and hence to the formation of La1-xSrxTiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cut-off is enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.

cond-mat.mtrl-sci↗

arXiv2006

Electronic Structure and Optical Properties of the Co-doped Anatase TiO$_{2}$ Studied from First Principles

The Co-doped anatase TiO$_{2}$, a recently discovered room-temperature ferromagnetic insulator, has been studied by the first-principles calculations in the pseudo-potential plane-wave formalism within the local-spin-density approximation (LSDA), supplemented by the full-potential linear augmented plane wave (FP-LAPW) method. Emphasis is placed on the dependence of its electronic structures and linear optical properties on the Co-doping concentration and oxygen vacancy in the system in order to pursue the origin of its ferromagnetism. In the case of substitutional doping of Co for Ti, our calculated results are well consistent with the experimental data, showing that Co is in its low spin state. Also, it is shown that the oxygen vacancy enhances the ferromagnetism and has larger effect on both the electronic structure and optical properties than the Co-doping concentration only.

cond-mat.mtrl-sci↗

arXiv2006

Effect of strong localization of doped holes in angle-resolved photoemission spectra of La$_{1-x}$Sr$_x$FeO$_3$

We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level ($E_F$) by $\sim 1$ eV compared with the calculation and to form a (pseudo)gap of $\sim 1$ eV at $E_F$. We attribute this observation to a strong localization effect of doped holes due to polaron formation.

cond-mat.str-el↗

arXiv2006

Indication of intrinsic room-temperature ferromagnetism in Ti1-xCoxO2-d thin film: An x-ray magnetic circular dichroism study

Soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L2,3 edges of Co doped rutile TiO2 at room temperature have revealed clear multiplet features characteristic of ferromagnetic Co2+ ions coordinated by O2- ions, being in sharp contrast to the featureless XMCD spectrum of Co metal or metallic clusters. The absorption and XMCD spectra agree well with a full atomic-multiplet calculation for the Co2+ high-spin state in the D2h-symmetry crystal field at the Ti site in rutile TiO2. The results indicate that the ferromagnetism arises from the Co2+ ions substituting the Ti4+ ions.

cond-mat.mtrl-sci↗

arXiv2006

Monte-Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a qualitatively reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening for the case of linewidth. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.

cond-mat.mtrl-sci↗

arXiv2006

Signature of Carrier-Induced Ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta}: Exchange Interaction Between High-Spin Co 2+ and the Ti 3d Conduction Band

X-ray photoemission spectroscopy measurements were performed on thin-film samples of rutile Ti_{1-x}Co_{x}O_{2-delta} to reveal the electronic structure. The Co 2p core level spectra indicate that the Co ions take the high-spin Co 2+ configuration, consistent with substitution on the Ti site. The high spin state and the shift due to the exchange splitting of the conduction band suggest strong hybridization between carriers in the Ti 3d t2g band and the t2g states of the high-spin Co 2+. These observations support the argument that room temperature ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta} is intrinsic.

cond-mat.str-el↗

arXiv2005

Robust Ti4+ states in SrTiO3 layers of La0.6Sr0.4MnO3/SrTiO3/ La0.6Sr0.4MnO3 junctions

We have investigated the interfacial electronic structure of La0.6Sr0.4MnO3 (LSMO)/ SrTiO3 (STO)/ LSMO heterojunctions utilizing the elemental selectivity of photoemission spectroscopy. The Ti 2p core-level spectra clearly show Ti4+ states and do not exhibit any indication of Ti3+ states in TiO2 layers irrespective of a different kind of adjacent atomic layer with different chemical carrier concentration. This result indicates that the Ti ions in the TiO2 atomic layers preserve their tetravalent states even in the vicinity of the valence-mismatched interface between LSMO and STO, reflecting chemical stability of the Ti4+ states.

cond-mat.str-el↗

arXiv2005

Majority-Carrier Mobilities in Undoped and \textit{n}-type Doped ZnO Epitaxial Layers

Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.

cond-mat.mtrl-sci↗

arXiv2005

Analysis on reflection spectra in strained ZnO thin films

Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy E_LT for the A-excitons is characterized by a negatively-peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.

cond-mat.mtrl-sci↗

arXiv2005

Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga

Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

cond-mat.mtrl-sci↗

arXiv2005

Determination of the intrinsic anomalous Hall effect of SrRuO$_3$

The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using intermediate buffer layers, in order to finely control the epitaxial strain. The AHE of the different films exhibits intrinsic features such as the sign change of the Hall resistivity with the temperature, even for small thicknesses of SrRuO$_3$. However, the anomalous Hall conductivity is greatly reduced from its intrinsic value as the carrier scattering is increased when the epitaxial strain is released. We argue that the AHE of fully strained SrRuO$_3$ film with low residual resistivity represents the intrinsic AHE of SrRuO$_3$.

cond-mat.mtrl-sci↗

arXiv2005

Radiative Decay of a Long-Lived Particle and Big-Bang Nucleosynthesis

The effects of radiatively decaying, long-lived particles on big-bang nucleosynthesis (BBN) are discussed. If high-energy photons are emitted after BBN, they may change the abundances of the light elements through photodissociation processes, which may result in a significant discrepancy between the BBN theory and observation. We calculate the abundances of the light elements, including the effects of photodissociation induced by a radiatively decaying particle, but neglecting the hadronic branching ratio. Using these calculated abundances, we derive a constraint on such particles by comparing our theoretical results with observations. Taking into account the recent controversies regarding the observations of the light-element abundances, we derive constraints for various combinations of the measurements. We also discuss several models which predict such radiatively decaying particles, and we derive constraints on such models.

hep-ph↗

arXiv2005

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

cond-mat.mtrl-sci↗