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Marco Battaglia

Publications and source records attributed to Marco Battaglia.

At least 37 records · Page 2Linked to original sources
arXiv2011

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

physics.ins-det↗
arXiv2011

Determination of Chargino and Neutralino Masses in high-mass SUSY scenarios at CLIC

This note reports the results of a study of the accuracy in the determination of chargino and neutralino masses in two high-mass supersymmetric scenarios through kinematic endpoints and threshold scans at a multi-TeV e+e- collider. The effects of initial state radiation, beamstrahlung and parton energy resolution are studied in fully hadronic final states of inclusive SUSY samples. Results obtained at generator level are compared to those from fully simulated and reconstructed events for selected channels.

hep-ex↗
arXiv2011

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

physics.ins-det↗
arXiv2011

Charged Higgs Boson Physics at Future Linear Colliders

The search and study of heavy Higgs bosons is an important part of the anticipated physics program of a high energy e+e- linear collider. This paper reviews the expected sensitivity of e+e- collisions from 0.5 up to 3 TeV in the study of the physics of charged Higgs bosons in supersymmetric scenarios.

hep-ex↗
arXiv2010

Vertex Tracking at a Future Linear Collider

The anticipated physics program at an high energy e+e- linear collider places special emphasis on the accuracy in extrapolating charged particle tracks to their production vertex to tag heavy quarks and leptons. This paper reviews physics motivations and performance requirements, sensor R&D directions and current results of the studies for a vertex tracker at a future linear collider.

physics.ins-det↗
arXiv2010

Beauty and charm to study new physics at future linear colliders

b and c hadrons are instrumental to the identification and study of the Higgs sector and new physics at a future lepton collider. This paper reviews highlights of b and c physics for the linear collider programs and the directions of ongoing R&D on pixellated Si sensors for its vertex tracker.

hep-ex↗
arXiv2010

A Study of e+e- -> H0A0 -> bbbb at 3 TeV at CLIC

The precise determination of the masses of the CP-odd and -even heavy Higgs bosons is an important part of the study of Supersymmetry and its relation with cosmology through dark matter. This note presents a determination of the A0 boson mass with the e+e- -> H0A0 -> b b b b process for a dark matter motivated cMSSM scenario with M(A) = 1141 GeV at CLIC. The analysis is performed with full simulation and reconstruction at 3 TeV accounting for beamstrahlung effects. SM and SUSY backgrounds are considered and the effect of the overlay of gamma gamma -> hadrons events on the signal is studied for various assumptions for the detector time-stamping capabilities. The di-jet mass resolution is improved by applying a kinematic fit. The A0 mass can be determined with a statistical accuracy of ~3-5 GeV for 3 inverse ab of statistics and 0 to 20 bunch crossings of gamma gamma background integrated in one event, respectively.

hep-ex↗
arXiv2010

Physics requirements for Scalar Muons searches at CLIC

The determination of smuon and neutralino masses in smuon pair production is an important part of the program of spectroscopic studies of Supersymmetry at a high energy linear collider. In this note we report the first results of a study of e+e- -> ~mu_R+ ~mu_R- in a high-mass, cosmology-motivated Supersymmetric scenario at 3 TeV at CLIC. This process is a good example to study requirements on the beam energy spectrum and polarisation and the track momentum resolution in a simple final state. We discuss the expected accuracy on the mass measurements as a function of the momentum resolution, luminosity spectrum, beam polarisation and time stamping capability. Results obtained at generator level are validated by comparison to full simulation and reconstruction. Preliminary requirements for the detector performances and beam polarisation are presented.

hep-ex↗
arXiv2010

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

physics.ins-det↗
arXiv2010

Four-top production and t tbar + missing energy events at multi TeV e+e- colliders

Four-top production and top pair production in association with missing energy at e+e- colliders are sensitive probes of beyond-the-Standard-Model physics. We consider Standard Model (SM) extensions containing a new U(1)' which couples preferably to the most massive states of the SM such as the top quark or Dark Matter but has suppressed couplings to all the light states of the SM, as inspired by Randall-Sundrum-like setups or theories of partial fermion compositeness. These simple models are poorly constrained by experimental data but lead to striking new signatures at colliders. In this note we consider Z' production in association with a top quark pair in 3 TeV e+e- collisions at CLIC, leading to interesting four-top final states and ttbar+missing energy events.

hep-ex↗
arXiv2009

Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy

A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron at 300 keV and of a factor of three in the image contrast, compared to traditional bright field illumination.

physics.ins-det↗
arXiv2009

CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.

physics.ins-det↗
arXiv2009

Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.

physics.ins-det↗
arXiv2008

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.

physics.ins-det↗
arXiv2008

A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.

physics.ins-det↗
arXiv2008

Testing the Higgs Mechanism in the Lepton Sector with multi-TeV e+e- Collisions

Multi-TeV e+e- collisions provide with a large enough sample of Higgs bosons to enable measurements of its suppressed decays. Results of a detailed study of the determination of the muon Yukawa coupling at 3 TeV, based on full detector simulation and event reconstruction, are presented. The muon Yukawa coupling can be determined with a relative accuracy of 0.04 to 0.08 for Higgs bosons masses from 120 GeV to 150 GeV, with an integrated luminosity of 5 inverse-ab. The result is not affected by overlapping two-photon background.

hep-ex↗
arXiv2008

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. The prototype response has been tested with infrared lasers and with the 1.35 GeV electron beam extracted from the injection booster at the LBNL Advanced Light Source. Results from irradiation tests with low energy protons and neutrons performed at the LBNL 88-inch Cyclotron are also presented.

physics.ins-det↗