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arXiv · 0904.0552

CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

Marco Battaglia·Devis Contarato·Peter Denes·Dionisio Doering·Velimir Radmilovic
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Abstract

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.

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Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Velimir Radmilovic. 2009-04-03. CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy. https://doi.org/10.1016/j.nima.2009.03.249

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