arXiv subjects

Matthias Scheffler

Publications and source records attributed to Matthias Scheffler.

At least 145 records · Page 8Linked to original sources

arXiv2007

Towards an exact treatment of exchange and correlation in materials: Application to the "CO adsorption puzzle" and other systems

It is shown that the errors of present-day exchange-correlation (xc) functionals are rather short ranged. For extended systems the correction can therefore be evaluated by analyzing properly chosen clusters and employing highest-quality quantum chemistry methods. The xc correction rapidly approaches a universal dependence with cluster size. The method is applicable to bulk systems as well as to defects in the bulk and at surfaces. It is demonstrated here for CO adsorption at transition-metal surfaces, where present-day xc functionals dramatically fail to predict the correct adsorption site, and for the crystal bulk cohesive energy.

cond-mat.mtrl-sci↗

arXiv2007

Density-functional theory study of half-metallic heterostructures: interstitial Mn in Si

Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $δ$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$ concentrations of 1/2 or 1 layer, the states induced in the band gap of $δ$-doped heterostructures still display high spin polarization, about 85% and 60%, respectively. The proposed heterostructures are more stable than previously assumed $δ$-layers of {\em substitutional} Mn. Contrary to wide-spread belief, the present study demonstrates that {\em interstitial} Mn can be utilized to tune the magnetic properties of Si, and thus provides a new clue for Si-based spintronics materials.

cond-mat.mtrl-sci↗

arXiv2007

CO oxidation at Pd(100): A first-principles constrained thermodynamics study

The possible formation of oxides or thin oxide films (surface oxides) on late transition metal surfaces is recently being recognized as an essential ingredient when aiming to understand catalytic oxidation reactions under technologically relevant gas phase conditions. Using the CO oxidation at Pd(100) as example, we investigate the composition and structure of this model catalyst surface over a wide range of (T,p)-conditions within a multiscale modeling approach where density-functional theory is linked to thermodynamics. The results show that under the catalytically most relevant gas phase conditions a thin surface oxide is the most stable "phase" and that the system is actually very close to a transition between this oxidic state and a reduced state in form of a CO covered Pd(100) surface.

cond-mat.mtrl-sci↗

arXiv2006

Non-Adiabatic Potential-Energy Surfaces by Constrained Density-Functional Theory

Non-adiabatic effects play an important role in many chemical processes. In order to study the underlying non-adiabatic potential-energy surfaces (PESs), we present a locally-constrained density-functional theory approach, which enables us to confine electrons to sub-spaces of the Hilbert space, e.g. to selected atoms or groups of atoms. This allows to calculate non-adiabatic PESs for defined charge and spin states of the chosen subsystems. The capability of the method is demonstrated by calculating non-adiabatic PESs for the scattering of a sodium and a chlorine atom, for the interaction of a chlorine molecule with a small metal cluster, and for the dissociation of an oxygen molecule at the Al(111) surface.

cond-mat.mtrl-sci↗

arXiv2006

Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)

We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at the (110) surfaces of III-V semiconductors. We find the (+/0) charge-transition level to be 0.49 eV above the surface valence-band maximum for GaAs(110) and 0.82 eV for InP(110). The results show a clear improvement over the local-density approximation and agree closely with an experimental analysis.

cond-mat.mtrl-sci↗

arXiv2006

Exact-exchange based quasiparticle energy calculations for the band gap, effective masses and deformation potentials of ScN

The band gaps, longitudinal and transverse effective masses, and deformation potentials of ScN in the rock-salt structure have been calculated employing G0W0-quasiparticle calculations using exact-exchange Kohn-Sham density functional theory one-particle wavefunctions and energies as input. Our quasiparticle gaps support recent experimental observations that ScN has a much lower indirect band gap than previously thought. The results are analyzed in terms of the influence of different approximations for exchange and correlation taken in the computational approach on the electronic structure of ScN.

cond-mat.mtrl-sci↗

arXiv2006

Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the increase of the apparent quasiparticle gap with increasing electron concentration is in good agreement with the observed blue shift of the experimental optical absorption edge. Moreover, the concentration dependence of the effective mass, which results from the non-parabolicity of the conduction band, agrees well with recent experimental findings. Based on the quasiparticle band structure the parameter set for a 4x4 kp Hamiltonian has been derived.

cond-mat.mtrl-sci↗

arXiv2006

First-principles statistical mechanics study of the stability of a sub-nanometer thin surface oxide in reactive environments: CO oxidation at Pd(100)

We employ a multiscale modeling approach to study the surface structure and composition of a Pd(100) model catalyst in reactive environments. Under gas phase conditions representative of technological CO oxidation (~1 atm, 300-600 K) we find the system on the verge of either stabilizing sub-nanometer thin oxide structures or CO adlayers at the surface. Under steady-state operation this suggests the presence or continuous formation and reduction of oxidic patches at the surface, which could be key to understand the observable catalytic function.

cond-mat.mtrl-sci↗

arXiv2006

Dielectric anisotropy in the GW space-time method

Excited-state calculations, notably for quasiparticle band structures, are nowadays routinely performed within the GW approximation for the electronic self-energy. Nevertheless, certain numerical approximations and simplifications are still employed in practice to make the computations feasible. An important aspect for periodic systems is the proper treatment of the singularity of the screened Coulomb interaction in reciprocal space, which results from the slow 1/r decay in real space. This must be done without introducing artificial interactions between the quasiparticles and their periodic images in repeated cells, which occur when integrals of the screened Coulomb interaction are discretised in reciprocal space. An adequate treatment of both aspects is crucial for a numerically stable computation of the self-energy. In this article we build on existing schemes for isotropic screening and present an extension for anisotropic systems. We also show how the contributions to the dielectric function arising from the non-local part of the pseudopotentials can be computed efficiently. These improvements are crucial for obtaining a fast convergence with respect to the number of points used for the Brillouin zone integration and prove to be essential to make GW calculations for strongly anisotropic systems, such as slabs or multilayers, efficient.

cond-mat.mtrl-sci↗

arXiv2005

Quantum size effect in Pb(100) films: the role of symmetry and implication for film growth

We show from density-functional calculations that Pb(100) thin films exhibit quantum size effect with a bilayer periodicity in film energies, film relaxations, and work functions, which originate from different symmetry of the stacking geometry of odd and even layer films. The bilayer periodicity of the film energy is argued to survive on a semiconductor substrate, which should allow the growth of ``magically'' thick even-layer Pb(100) films. Furthermore, it is found that the quantum well states in a simple metal film can be classified into $σ$-bonded and $π$-bonded states, which quantize independently.

cond-mat.mtrl-sci↗

arXiv2005

First-principles kinetic Monte Carlo simulations for heterogeneous catalysis, applied to the CO oxidation at RuO2(110)

We describe a first-principles statistical mechanics approach enabling us to simulate the steady-state situation of heterogeneous catalysis. In a first step density-functional theory together with transition-state theory is employed to obtain the energetics of all relevant elementary processes. Subsequently the statistical mechanics problem is solved by the kinetic Monte Carlo method, which fully accounts for the correlations, fluctuations, and spatial distributions of the chemicals at the surface of the catalyst under steady-state conditions. Applying this approach to the catalytic oxidation of CO at RuO2(110), we determine the surface atomic structure and composition in reactive environments ranging from ultra-high vacuum (UHV) to technologically relevant conditions, i.e. up to pressures of several atmospheres and elevated temperatures. We also compute the CO2 formation rates (turnover frequencies). The results are in quantitative agreement with all existing experimental data. We find that the high catalytic activity of this system is intimately connected with a disordered, dynamic surface ``phase'' with significant compositional fluctuations. In this active state the catalytic function results from a self-regulating interplay of several elementary processes.

cond-mat.mtrl-sci↗

arXiv2005

First-principles study of thin magnetic transition-metal silicide films on Si(001)

In order to combine silicon technology with the functionality of magnetic systems, a number of ferromagnetic (FM) materials have been suggested for the fabrication of metal/semiconductor heterojunctions. In this work, we present a systematic study of several candidate materials in contact with the Si surface. We employ density-functional theory calculations to address the thermodynamic stability and magnetism of both pseudomorphic CsCl-like $M$Si ($M$=Mn, Fe, Co, Ni) thin films and Heusler alloy $M_2$MnSi ($M$=Fe, Co, Ni) films on Si(001). Our calculations show that Si-termination of the $M$Si films is energetically preferable during epitaxy since it minimizes the energetic cost of broken bonds at the surface. Moreover, we can explain the calculated trends in thermodynamic stability of the $M$Si thin films in terms of the $M$-Si bond-strength and the $M$ 3d orbital occupation. From our calculations, we predict that ultrathin MnSi films are FM with sizable spin magnetic moments at the Mn atoms, while FeSi and NiSi films are nonmagnetic. However, CoSi films display itinerant ferromagnetism. For the $M_2$MnSi films with Heusler-type structure, the MnSi termination is found to have the highest thermodynamic stability. In the FM ground state, the calculated strength of the effective coupling between the magnetic moments of Mn atoms within the same layer approximately scales with the measured Curie temperatures of the bulk $M_2$MnSi compounds. In particular, the Co$_2$MnSi/Si(001) thin film has a robust FM ground state as in the bulk, and is found to be stable against a phase separation into CoSi/Si(001) and MnSi/Si(001) films. Hence this material is of possible use in FM-Si heterojunctions and deserves further experimental investigations.

cond-mat.mtrl-sci↗

arXiv2005

Comparison of the full-potential and frozen-core approximation approaches to density-functional calculations of surfaces

We scrutinize the accuracy of the pseudopotential approximation in density-functional theory (DFT) calculations of surfaces by systematically comparing to results obtained within a full-potential setup. As model system we choose the CO oxidation at a RuO2(110) surface and focus in particular on the adsorbate binding energies and reaction barriers as target quantities for the comparison. Rather surprisingly, the major reason for discrepancy does not result from the neglected semi-core state relaxation in the frozen-core approximation, but from an inadequate description of the local part of the Ru pseudopotential, responsible for the scattering of f like waves. Tiny, seemingly irrelevant, imprecisions appearing in these properties can have a noticeable influence on the surface energetics. At least for the present example, we obtain excellent agreement between both approaches, if the pseudopotential describes these scattering properties accurately.

cond-mat.mtrl-sci↗

arXiv2005

Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound semiconductors

We report quasiparticle-energy calculations of the electronic bandstructure as measured by valence-band photoemission for selected II-VI compounds and group-III-nitrides. By applying GW as perturbation to the ground state of the fictitious, non-interacting Kohn-Sham electrons of density-functional theory (DFT) we systematically study the electronic structure of zinc-blende GaN, ZnO, ZnS and CdS. Special emphasis is put on analysing the role played by the cation semicore d-electrons that are explicitly included as valence electrons in our pseudopotential approach. Unlike in the majority of previous GW studies, which are almost exlusively based on ground state calculations in the local-density approximation (LDA), we combine GW with exact-exchange DFT calculations in the optimised-effective potential approach (OEPx). This is a much more elaborate and computationally expensive approach. However, we show that applying the OEPx approach leads to an improved description of the d-electron hybridisation compared to the LDA. Moreover we find that it is essential to use OEPx pseudopotentials in order to treat core-valence exchange consistently. Our OEPx based quasiparticle valence bandstructures are in good agreement with available photoemission data in contrast to the ones based on the LDA. We therefore conclude that for these materials OEPx constitutes the better starting point for subsequent GW calculations.

cond-mat.mtrl-sci↗

arXiv2005

Density-functional theory study of the initial oxygen incorporation in Pd(111)

Pd(111) has recently been shown to exhibit a propensity to form a sub-nanometer thin surface oxide film already well before a full monolayer coverage of adsorbed O atoms is reached on the surface. Aiming at an atomic-scale understanding of this finding, we study the initial oxygen incorporation into the Pd(111) surface using density-functional theory. We find that oxygen incorporation into the sub-surface region starts at essentially the same coverage as formation of the surface oxide. This implies that the role of sub-surface oxygen should be considered as that of a metastable precursor in the oxidation process of the surface. The mechanisms found to play a role towards the ensuing stabilization of an ordered oxidic structure with a mixed on-surface/sub-surface site occupation follow a clear trend over the late 4d transition metal series, as seen by comparing our data to previously published studies concerned with oxide formation at the basal surface of Ru, Rh and Ag. The formation of a linearly aligned O-TM-O trilayered structure (TM = Ru, Rh, Pd, Ag), together with an efficient coupling to the underlying substrate seem to be key ingredients in this respect.

cond-mat.mtrl-sci↗

arXiv2004

Dissociation of O2 at Al(111): The Role of Spin Selection Rules

A most basic and puzzling enigma in surface science is the description of the dissociative adsorption of O2 at the (111) surface of Al. Already for the sticking curve alone, the disagreement between experiment and results of state-of-the-art first-principles calculations can hardly be more dramatic. In this paper we show that this is caused by hitherto unaccounted spin selection rules, which give rise to a highly non-adiabatic behavior in the O2/Al(111) interaction. We also discuss problems caused by the insufficient accuracy of present-day exchange-correlation functionals.

cond-mat.mtrl-sci↗

arXiv2004

The steady-state of heterogeneous catalysis, studied by first-principles statistical mechanics

The turn-over frequency of the catalytic oxidation of CO at RuO2(110) was calculated as function of temperature and partial pressures using ab initio statistical mechanics. The underlying energetics of the gas-phase molecules, dissociation, adsorption, surface diffusion, surface chemical reactions, and desorption were obtained by all-electron density-functional theory. The resulting CO2 formation rate [in the full (T, p_CO, p_O2)-space], the movies displaying the atomic motion and reactions over times scales from picoseconds to seconds, and the statistical analyses provide insights into the concerted actions ruling heterogeneous catalysis and open thermodynamic systems in general.

cond-mat.mtrl-sci↗

arXiv2004

Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions

Previous and present "academic" research aiming at atomic scale understanding is mainly concerned with the study of individual molecular processes possibly underlying materials science applications. Appealing properties of an individual process are then frequently discussed in terms of their direct importance for the envisioned material function, or reciprocally, the function of materials is somehow believed to be understandable by essentially one prominent elementary process only. What is often overlooked in this approach is that in macroscopic systems of technological relevance typically a large number of distinct atomic scale processes take place. Which of them are decisive for observable system properties and functions is then not only determined by the detailed individual properties of each process alone, but in many, if not most cases also the interplay of all processes, i.e. how they act together, plays a crucial role. For a "predictive materials science modeling with microscopic understanding", a description that treats the statistical interplay of a large number of microscopically well-described elementary processes must therefore be applied. Modern electronic structure theory methods such as DFT have become a standard tool for the accurate description of individual molecular processes. Here, we discuss the present status of emerging methodologies which attempt to achieve a (hopefully seamless) match of DFT with concepts from statistical mechanics or thermodynamics, in order to also address the interplay of the various molecular processes. The new quality of, and the novel insights that can be gained by, such techniques is illustrated by how they allow the description of crystal surfaces in contact with realistic gas-phase environments.

cond-mat.mtrl-sci↗