arXiv subjects

N. M. R. Peres

Publications and source records attributed to N. M. R. Peres.

At least 109 records · Page 6Linked to original sources

arXiv2012

Scattering by linear defects in graphene: a continuum approach

We study the low-energy electronic transport across periodic extended defects in graphene. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is defined by the boundary condition imposed by the defect on the massless Dirac fermions. We demonstrate how this low-energy boundary condition can be computed from the tight-binding model of the defect line. For simplicity we consider defect lines oriented along the zigzag direction, which requires the consideration of only one copy of Dirac equation. Three defect lines of this kind are studied and shown to be mappable between them: the pentagon-only, the zz(558) and the zz(5757) defect lines. In addition, in this same limit, we calculate the conductance across such defect lines with size L, and find it to be proportional to k_FL at low temperatures.

cond-mat.mes-hall↗

arXiv2012

Enhanced Optical Dichroism of Graphene Nanoribbons

The optical conductivity of graphene nanoribbons is analytical and exactly derived. It is shown that the absence of translation invariance along the transverse direction allows considerable intra-band absorption in a narrow frequency window that varies with the ribbon width, and lies in the THz range domain for ribbons 10-100nm wide. In this spectral region the absorption anisotropy can be as high as two orders of magnitude, which renders the medium strongly dichroic, and allows for a very high degree of polarization (up to ~85) with just a single layer of graphene. The effect is resilient to level broadening of the ribbon spectrum potentially induced by disorder. Using a cavity for impedance enhancement, or a stack of few layer nanoribbons, these values can reach almost 100%. This opens a potential prospect of employing graphene ribbon structures as efficient polarizers in the far IR and THz frequencies.

cond-mat.mes-hall↗

arXiv2012

Light scattering by a medium with a spatially modulated optical conductivity: the case of graphene

We describe light scattering from a graphene sheet having a modulated optical conductivity. We show that such modulation enables the excitation of surface plasmon-polaritons by an electromagnetic wave impinging at normal incidence. The resulting surface plasmon-polaritons are responsible for a substantial increase of electromagnetic radiation absorption by the graphene sheet. The origin of the modulation can be due either to a periodic strain field or to adatoms (or absorbed molecules) with a modulated adsorption profile.

cond-mat.mes-hall↗

arXiv2012

Confined magneto-optical waves in graphene

The electromagnetic mode spectrum of single-layer graphene subjected to a quantizing magnetic field is computed taking into account intraband and interband contributions to the magneto-optical conductivity. We find that a sequence of weakly decaying quasi-transverse-electric modes, separated by magnetoplasmon polariton modes, emerge due to the quantizing magnetic field. The characteristics of these modes are tuneable, by changing the magnetic field or the Fermi energy.

cond-mat.mes-hall↗

arXiv2012

Efficient graphene-based photodetector with two cavities

We present an efficient graphene-based photodetector with two Fabri-Pérot cavities. It is shown that the absorption can reach almost 100% around a given frequency, which is determined by the two-cavity lengths. It is also shown that hysteresis in the absorbance is possible, with the transmittance amplitude of the mirrors working as an external driving field. The role of non-linear contributions to the optical susceptibility of graphene is discussed.

cond-mat.mes-hall↗

arXiv2012

Continuum Model of the Twisted Bilayer

The continuum model of the twisted graphene bilayer (Phys. Rev. Lett. 99, 256802, 2007) is extended to include all types of commensurate structures. The essential ingredient of the model, the Fourier components of the spatially modulated hopping amplitudes, can be calculated analytically, for any type of commensurate structures in the low twist angle limit. We show that the Fourier components that could give rise to a gap in the SE-even structures discussed by Mele (Phys. Rev. B 81, 161405 2010) vanish linearly with angle, whereas the amplitudes that saturate to finite values, as $θ\to0$, ensure that all low angle structures share essentially the same physics. We extend our previous calculations beyond the validity of perturbation theory, to discuss the disappearance of Dirac cone structure at angles below 1^{\circ}.

cond-mat.mtrl-sci↗

arXiv2012

Faraday effect in graphene enclosed in an optical cavity and the equation of motion method for the study of magneto-optical transport in solids

We show that by enclosing graphene in an optical cavity, giant Faraday rotations in the infrared regime are generated and measurable Faraday rotation angles in the visible range become possible. Explicit expressions for the Hall steps of the Faraday rotation angle are given for relevant regimes. In the context of this problem we develop an equation of motion (EOM) method for calculation of the magneto-optical properties of metals and semiconductors. It is shown that properly regularized EOM solutions are fully equivalent to the Kubo formula.

cond-mat.mes-hall↗

arXiv2011

Field-effect tunneling transistor based on vertical graphene heterostructures

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.

cond-mat.mes-hall↗

arXiv2011

Solution of the quantum harmonic oscillator plus a delta-function potential at the origin: The oddness of its even-parity solutions

We derive the energy levels associated with the even-parity wave functions of the harmonic oscillator with an additional delta-function potential at the origin. Our results bring to the attention of students a non-trivial and analytical example of a modification of the usual harmonic oscillator potential, with emphasis on the modification of the boundary conditions at the origin. This problem calls the attention of the students to an inaccurate statement in quantum mechanics textbooks often found in the context of solution of the harmonic oscillator problem.

quant-ph↗

arXiv2011

Zigzag graphene nanoribbon edge reconstruction with Stone-Wales defects

In this article, we study zigzag graphene nanoribbons with edges reconstructed with Stone-Wales defects, by means of an empirical (first-neighbor) tight-binding method, with parameters determined by ab-initio calculations of very narrow ribbons. We explore the characteristics of the electronic band structure with a focus on the nature of edge states. Edge reconstruction allows the appearance of a new type of edge states. They are dispersive, with non-zero amplitudes in both sub-lattices; furthermore, the amplitudes have two components that decrease with different decay lengths with the distance from the edge; at the Dirac points one of these lengths diverges, whereas the other remains finite, of the order of the lattice parameter. We trace this curious effect to the doubling of the unit cell along the edge, brought about by the edge reconstruction. In the presence of a magnetic field, the zero-energy Landau level is no longer degenerate with edge states as in the case of pristine zigzag ribbon.

cond-mat.mes-hall↗

arXiv2011

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.

cond-mat.mes-hall↗

arXiv2011

Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene

The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature.

cond-mat.mes-hall↗

arXiv2011

Transport properties of graphene with one-dimensional charge defects

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials.

cond-mat.mes-hall↗

arXiv2011

Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The origin of the strong short-range potentials may lie in adsorbed hydrocarbons at the surface of graphene. The equivalence among results based on the partial-wave description of scattering, the Lippmann-Schwinger equation, and the T-matrix approach is established. Scattering due to resonant impurities close to the neutrality point is investigated via a numerical computation of the Kubo formula using a kernel polynomial method. We find that relevant adsorbate species originate impurity bands in monolayer and bilayer graphene close to the Dirac point. In the midgap region, a plateau of minimum conductivity of about $e^2/h$ (per layer) is induced by the resonant disorder. In bilayer graphene, a large adsorbate concentration can develop an energy gap between midgap and high-energy states. As a consequence, the conductivity plateau is supressed near the edges and a "conductivity gap" takes place. Finally, a scattering formalism for electrons in biased bilayer graphene, taking into account the degeneracy of the spectrum, is developed and the dc conductivity of that system is studied.

cond-mat.mes-hall↗

arXiv2011

Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description

We have studied boron nitride monolayer and bilayer band structures. For bilayers, the ground state energies of the different five stackings are computed using DFT in order to determine the most stable configuration. Also, the interlayer distance for the five different types of stacking in which boron-nitride bilayers can be found is determined. Using a minimal tight binding model for the band structures of boron nitride bilayers, the hopping parameters and the onsite energies have been extracted by fitting a tight binding empirical model to the DFT results.

cond-mat.mes-hall↗

arXiv2011

Mechanism for graphene-based optoelectronic switches by tuning surface plasmon-polaritons in monolayer graphene

It is shown that one can explore the optical conductivity of graphene, together with the ability of controlling its electronic density by an applied gate voltage, in order to achieve resonant coupling between an external electromagnetic radiation and surface plasmon-polaritons in the graphene layer. This opens the possibility of electrical control of the intensity of light reflected inside a prism placed on top of the graphene layer, by switching between the regimes of total reflection and total absorption. The predicted effect can be used to build graphene-based opto-electronic switches.

cond-mat.mes-hall↗

arXiv2010

Optical Properties of Strained Graphene

The optical conductivity of graphene strained uniaxially is studied within the Kubo-Greenwood formalism. Focusing on inter-band absorption, we analyze and quantify the breakdown of universal transparency in the visible region of the spectrum, and analytically characterize the transparency as a function of strain and polarization. Measuring transmittance as a function of incident polarization directly reflects the magnitude and direction of strain. Moreover, direction-dependent selection rules permit identification of the lattice orientation by monitoring the van-Hove transitions. These photoelastic effects in graphene can be explored towards atomically thin, broadband optical elements.

cond-mat.mes-hall↗

arXiv2010

Colloquium: The transport properties of graphene: An introduction

An introduction to the transport properties of graphene combining experimental results and theoretical analysis is presented. In the theoretical description simple intuitive models are used to illustrate important points on the transport properties of graphene. The concept of chirality, stemming from the massless Dirac nature of the low energy physics of the material, is shown to be instrumental in understanding its transport properties: the conductivity minimum, the electronic mobility, the effect of strain, the weak (anti-)localization, and the optical conductivity.

cond-mat.mes-hall↗