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N. M. R. Peres

Publications and source records attributed to N. M. R. Peres.

At least 127 records · Page 7Linked to original sources
arXiv2010

Excitonic effects in the optical conductivity of gated graphene

We study the effect of electron-electron interactions in the optical conductivity of graphene under applied bias and derive a generalization of Elliot's formula, commonly used for semiconductors, for the optical intensity. We show that {\it excitonic resonances} are responsible for several features of the experimentally measured mid-infrared response of graphene such as the increase of the conductivity beyond the "universal" value above the Fermi blocked regime, the broadening of the absorption at the threshold, and the decrease of the optical conductivity at higher frequencies. Our results are also in agreement with {\it ab initio} calculations in the neutral regime.

cond-mat.mes-hall↗
arXiv2010

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

cond-mat.mes-hall↗
arXiv2010

Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

cond-mat.mes-hall↗
arXiv2010

Dynamical polarizability of graphene beyond the Dirac cone approximation

We compute the dynamical polarizability of graphene beyond the usual Dirac cone approximation, integrating over the full Brillouin zone. We find deviations at $\hbarω=2t$ ($t$ the hopping parameter) which amount to a logarithmic singularity due to the van Hove singularity and derive an approximate analytical expression. Also at low energies, we find deviations from the results obtained from the Dirac cone approximation which manifest themselves in a peak spitting at arbitrary direction of the incoming wave vector $\q$. Consequences for the plasmon spectrum are discussed.

cond-mat.mes-hall↗
arXiv2010

Analytical study of non-linear transport across a semiconductor-metal junction

In this paper we study analytically a one-dimensional model for a semiconductor-metal junction. We study the formation of Tamm states and how they evolve when the semi-infinite semiconductor and metal are coupled together. The non-linear current, as a function of the bias voltage, is studied using the non-equilibrium Green's function method and the density matrix of the interface is given. The electronic occupation of the sites defining the interface has strong non-linearities as function of the bias voltage due to strong resonances present in the Green's functions of the junction sites. The surface Green's function is computed analytically by solving a quadratic matrix equation, which does not require adding a small imaginary constant to the energy. The wave function for the surface states is given.

cond-mat.mes-hall↗
arXiv2009

Theory of Scanning Tunneling Spectroscopy of Magnetic Adatoms in Graphene

We examine theoretically the signatures of magnetic adatoms in graphene probed by scanning tunneling spectroscopy (STS). When the adatom hybridizes equally with the two graphene sublattices, the broadening of the local adatom level is anomalous and can scale with the cube of the energy. In contrast to ordinary metal surfaces, the adatom local moment can be suppressed by the proximity of the probing scanning tip. We propose that the dependence of the tunneling conductance on the distance between the tip and the adatom can provide a clear signature for the presence of local magnetic moments. We also show that tunneling conductance can distinguish whether the adatom is located on top of a carbon atom or in the center of a honeycomb hexagon.

cond-mat.str-el↗
arXiv2009

Magnetism in strained graphene dots

We study the magnetization of square and hexagonal graphene dots. It is shown that two classes of hexagonal dots have a second order phase transition at a critical Hubbard energy $U$, whoose value is similar to the one in bulk graphene, albeit the dots do not have a density of states proportional to the absolute value of the energy, relatively to the Dirac point. Furthermore, we show that a particular class of hexagonal dots having zig-zag edges, does not exhibit zero energy edge states. We also study the effect of uniaxial strain on the evolution of the magnetization of square dots, and find that the overall effect is an enhancement of magnetization with strain. The enhancement can be as large as 100% for strain of the order of 20%. Additionaly, stress induces a spatial displacement of the magnetization over the dot, moving it from the zig-zag to the armchair edges.

cond-mat.mes-hall↗
arXiv2009

A tight-binding approach to uniaxial strain in graphene

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However this gap is critical, requiring threshold deformations in excess of 20%, and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations, and the gap appears as a consequence of the merging of the two inequivalent Dirac points, only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.

cond-mat.mtrl-sci↗
arXiv2009

Local density of states and scanning tunneling currents in graphene

We present exact analytical calculations of scanning tunneling currents in locally disordered graphene using a multimode description of the microscope tip. Analytical expressions for the local density of states (LDOS) are given for energies beyond the Dirac cone approximation. We show that the LDOS at the $A$ and $B$ sublattices of graphene are out of phase by $π$ implying that the averaged LDOS, as one moves away from the impurity, shows no trace of the $2q_F$ (with $q_F$ the Fermi momentum) Friedel modulation. This means that a STM experiment lacking atomic resolution at the sublattice level will not be able of detecting the presence of the Friedel oscillations [this seems to be the case in the experiments reported in Phys. Rev. Lett. {\bf 101}, 206802 (2008)]. The momentum maps of the LDOS for different types of impurities are given. In the case of the vacancy, $2q_F$ features are seen in these maps. In all momentum space maps, $K$ and $K+K^\prime$ features are seen. The $K+K^\prime$ features are different from what is seen around zero momentum. An interpretation for these features is given. The calculations reported here are valid for chemical substitution impurities, such as boron and nitrogen atoms, as well as for vacancies. It is shown that the density of states close to the impurity is very sensitive to type of disorder: diagonal, non-diagonal, or vacancies. In the case of weakly coupled (to the carbon atoms) impurities, the local density of states presents strong resonances at finite energies, which leads to steps in the scanning tunneling currents and to suppression of the Fano factor.

cond-mat.mes-hall↗
arXiv2009

Strained graphene: tight-binding and density functional calculations

We determine the band structure of graphene under strain using density functional calculations. The ab-initio band strucure is then used to extract the best fit to the tight-binding hopping parameters used in a recent microscopic model of strained graphene. It is found that the hopping parameters may increase or decrease upon increasing strain, depending on the orientation of the applied stress. The fitted values are compared with an available parametrization for the dependence of the orbital overlap on the distance separating the two carbon atoms. It is also found that strain does not induce a gap in graphene, at least for deformations up to 10%.

cond-mat.mes-hall↗
arXiv2009

Scanning Tunneling Microscopy currents on locally disordered graphene

We study the local density of states at and around a substituting impurity and use these results to compute current versus bias characteristic curves of Scanning Tunneling Microscopy (STM) experiments done on the surface of graphene. This allow us to detect the presence of substituting impurities on graphene. The case of vacancies is also analyzed. We find that the shape and magnitude of the STM characteristic curves depend on the position of the tip and on the nature of the defect, with the strength of the binging between the impurity and the carbon atoms playing an important role. Also the nature of the last atom of the tip has an influence on the shape of the characteristic curve.

cond-mat.mes-hall↗
arXiv2009

Scattering in one-dimensional heterostructures described by the Dirac equation

We consider electronic transport accross one-dimensional heterostructures described by the Dirac equation. We discuss the cases where both the velocity and the mass are position dependent. We show how to generalize the Dirac Hamiltonian in order to obtain a Hermitian problem for spatial dependent velocity. We solve exactly the case where the position dependence of both velocity and mass is linear. In the case of velocity profiles, it is shown that there is no backscattering of Dirac electrons. In the case of the mass profile backscattering exists. In this case, it is shown that the linear mass profile induces less backscattering than the abrupt step-like profile. Our results are a first step to the study of similar problems in graphene.

cond-mat.mes-hall↗
arXiv2009

Lattice Green's function approach to the solution of the spectrum of an array of quantum dots and its linear conductance

In this paper we derive general relations for the band-structure of an array of quantum dots and compute its transport properties when connected to two perfect leads. The exact lattice Green's functions for the perfect array and with an attached adatom are derived. The expressions for the linear conductance for the perfect array as well as for the array with a defect are presented. The calculations are illustrated for a dot made of three atoms. The results derived here are also the starting point to include the effect of electron-electron and electron-phonon interactions on the transport properties of quantum dot arrays. Different derivations of the exact lattice Green's functions are discussed.

cond-mat.mes-hall↗
arXiv2008

Distortion of the perfect lattice structure in bilayer graphene

We consider the instability of bilayer graphene with respect to a distorted configuration in the same spirit as the model introduced by Su, Schrieffer and Heeger. By computing the total energy of a distorted bilayer, we conclude that the ground state of the system favors a finite distortion. We explore how the equilibrium configuration changes with carrier density and an applied potential difference between the two layers.

cond-mat.mes-hall↗
arXiv2008

Conductivity of suspended and non-suspended graphene at finite gate voltage

We compute the DC and the optical conductivity of graphene for finite values of the chemical potential by taking into account the effect of disorder, due to mid-gap states (unitary scatterers) and charged impurities, and the effect of both optical and acoustic phonons. The disorder due to mid-gap states is treated in the coherent potential approximation (CPA, a self-consistent approach based on the Dyson equation), whereas that due to charged impurities is also treated via the Dyson equation, with the self-energy computed using second order perturbation theory. The effect of the phonons is also included via the Dyson equation, with the self energy computed using first order perturbation theory. The self-energy due to phonons is computed both using the bare electronic Green's function and the full electronic Green's function, although we show that the effect of disorder on the phonon-propagator is negligible. Our results are in qualitative agreement with recent experiments. Quantitative agreement could be obtained if one assumes water molelcules under the graphene substrate. We also comment on the electron-hole asymmetry observed in the DC conductivity of suspended graphene.

cond-mat.mes-hall↗
arXiv2008

Localized States at Zigzag Edges of Multilayer Graphene and Graphite Steps

We report the existence of zero energy surface states localized at zigzag edges of $N$-layer graphene. Working within the tight-binding approximation, and using the simplest nearest-neighbor model, we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in multilayer graphene can be divided into three families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two last, or the two first layers of the stack, equivalent to surface states in bilayer graphene; (iii) states with finite amplitude over three consecutive layers. Multilayer graphene edge states are shown to be robust to the inclusion of the next nearest-neighbor interlayer hopping. We generalize the edge state solution to the case of graphite steps with zigzag edges, and show that edge states measured through scanning tunneling microscopy and spectroscopy of graphite steps belong to family (i) or (ii) mentioned above, depending on the way the top layer is cut.

cond-mat.mes-hall↗
arXiv2008

Inducing energy gaps in graphene monolayer and bilayer

In this paper we propose a mechanism for the induction of energy gaps in the spectrum of graphene and its bilayer, when both these materials are covered with water and ammonia molecules. The energy gaps obtained are within the range 20-30 meV, values compatible to those found in experimental studies of graphene bilayer. We further show that the binding energies are large enough for the adsorption of the molecules to be maintained even at room temperature.

cond-mat.mtrl-sci↗