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Peter Denes

Publications and source records attributed to Peter Denes.

At least 19 recordsLinked to original sources

Robust electron counting for direct electron detectors with the Back-Propagation Counting method

Electron microscopy (EM) is a foundational tool for directly assessing the structure of materials. Recent advances in direct electron detectors have improved signal-to noise ratios via single-electron counting. However, accurately counting electrons at high fluence remains challenging. We developed a new method of electron counting for direct electron detectors, Back-Propagation Counting (BPC). BPC uses machine learning techniques designed for mathematical operations on large tensors but does not require large training datasets. In synthetic data, we show BPC is able to count multiple electron strikes per pixel and is robust to increasing occupancy. In experimental data, frames counted with BPC are shown to reconstruct diffraction peaks corresponding to individual nanoparticles with relatively higher intensity and produce images with improved contrast when compared to a standard counting method. Together, these results show that BPC excels in experiments where pixels see a high flux of electron irradiation such as in situ TEM movies and diffraction.

physics.ins-det

Design of Electrostatic Aberration Correctors for Scanning Transmission Electron Microscopy

In a scanning transmission electron microscope (STEM), producing a high-resolution image generally requires an electron beam focused to the smallest point possible. However, the magnetic lenses used to focus the beam are unavoidably imperfect, introducing aberrations that limit resolution. Modern STEMs overcome this by using hardware aberration correctors comprised of many multipole lenses, but these devices are complex, expensive, and can be difficult to tune. We demonstrate a design for an electrostatic phase plate that can act as an aberration corrector. The corrector is comprised of annular segments, each of which is an independent two-terminal device that can apply a constant or ramped phase shift to a portion of the electron beam. We show the improvement in image resolution using an electrostatic corrector. Engineering criteria impose that much of the beam within the probe-forming aperture be blocked by support bars, leading to large probe tails for the corrected probe that sample the specimen beyond the central lobe. We also show how this device can be used to create other STEM beam profiles such as vortex beams and beams with a high degree of phase diversity, which improve information transfer in ptychographic reconstructions.

cond-mat.mtrl-sci

Big Industry Engagement to Benefit HEP: Microelectronics Support from Large CAD Companies

Microelectronics development is critical to a wide number of DOE projects and mission space. Creating Helpful Incentives to Produce Semiconductors (CHIPS) and manufacturing Application Specific Integrated Circuits (ASIC) are important to DOE, so the infrastructure that allows DOE to carry out its mission needs to exist. This paper discusses the current initiatives and recommends a business model to build an ecosystem for microelectronics design for DOE which includes three main building blocks: the Computer Aided Design (CAD) - Electronic Design Automation (EDA) design tools, basic design IPs, and access to semiconductor fabrication facilities.

physics.soc-ph

Small footprint optoelectrodes for simultaneous readout and passive light localization by the use of ring resonators

Neural probes are in vivo invasive devices that combine electrophysiology and optogenetics to gain insight into how the brain operates, down to the single neuron and its network activity. Their integration of stimulation sites and sensors allows for recording and manipulating neurons` activity with a high spatiotemporal resolution. State of the art probes are limited by tradeoffs between their lateral dimension, the number of sensors, and the ability to selectively access independent stimulation sites. Here, we realize a highly scalable probe that features a three-dimensional integration of small footprint arrays of sensors and nanophotonic circuits and scales the density of sensors per cross-section by one order of magnitude with respect to state of the art devices. For the first time, we overcome the spatial limit of the nanophotonic circuit by coupling only one waveguide to numerous optical ring resonators as passive nanophotonic switches. With our strategy, we achieve accurate on-demand light localization while avoiding spatial demanding bundles of waveguides and demonstrate the feasibility of a proof of concept device and its additional scalability, towards high resolution and low damaging neural optoelectrodes.

physics.bio-ph

Three dimensional localization of nanoscale battery reactions using soft X-ray tomography

Battery function is determined by the efficiency and reversibility of the electrochemical phase transformations at solid electrodes. The microscopic tools available to study the chemical states of matter with the required spatial resolution and chemical specificity are intrinsically limited when studying complex architectures by their reliance on two dimensional projections of thick material. Here, we report the development of soft X-ray ptychographic tomography, which resolves chemical states in three dimensions at 11-nm spatial resolution. We study an ensemble of nano-plates of lithium iron phosphate (LixFePO4) extracted from a battery electrode at 50% state of charge. Using a set of nanoscale tomograms, we quantify the electrochemical state and resolve phase boundaries throughout the volume of individual nano-particles. These observations reveal multiple reaction points and intra-particle heterogeneity that highlights the importance of electrical connectivity, providing novel insight to the design of the next generation of high-performance devices.

cond-mat.mtrl-sci

Performance of the LBNL FastCCD for the European XFEL

The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25\,keV and 25\,keV with a unique timing structure. One of the detectors foreseen at XFEL.EU for the soft X-ray regime (energies below 6\,keV) is a quasi column-parallel readout FastCCD developed by Lawrence Berkeley National Lab (LBNL) specifically for the XFEL.EU requirements. Its sensor has 1920$\times$960 pixels of 30\,$μ$m $\times$30\,$μ$m size with a beam hole in the middle of the sensor. The camera can be operated in full frame and frame store mode. With the FastCCD a frame rate of up to 120~fps can be achieved, but at XFEL.EU the camera settings are optimized for the 10\,Hz XFEL bunch-mode. The detector has been delivered to XFEL.EU. Results of the performance tests and calibration done using the XFEL.EU detector calibration infrastructure are presented quantifying noise level, gain and energy resolution.

physics.ins-det

Femtosecond X-ray magnetic circular dichroism absorption spectroscopy at an X-ray free electron laser

X-ray magnetic circular dichroism spectroscopy using an X-ray free electron laser is demonstrated with spectra over the Fe L$_{3,2}$-edges. This new ultrafast time-resolved capability is then applied to a fluence-dependent study of all-optical magnetic switching dynamics of Fe and Gd magnetic sublattices in a GdFeCo thin film above its magnetization compensation temperature. At the magnetic switching fuence, we corroborate the existence of a transient ferromagnetic-like state. The timescales of the dynamics, however, are longer than previously observed below the magnetization compensation temperature. Above and below the switching fluence range, we observe secondary demagnetization with about 5 ps timescales. This indicates that the spin thermalization takes longer than 5 ps.

cond-mat.mtrl-sci

Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders

This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at future lepton colliders.

physics.ins-det

Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.

physics.ins-det

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

physics.ins-det

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

physics.ins-det

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

physics.ins-det

Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy

A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron at 300 keV and of a factor of three in the image contrast, compared to traditional bright field illumination.

physics.ins-det

CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.

physics.ins-det

Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.

physics.ins-det

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.

physics.ins-det

A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.

physics.ins-det