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Qing-feng Sun

Publications and source records attributed to Qing-feng Sun.

At least 55 records · Page 3Linked to original sources

The parity of specular Andreev reflection under mirror operation in zigzag graphene ribbon

It is known that the parity of reflection amplitude can either be even or odd under the mirror operation. Up to now, all the parities of reflection amplitude in the one-mode energy region are even under the mirror operation. In this paper, we give an example of odd parity for Andreev reflection (AR) in a three-terminal graphene-supercondutor hybrid systems. We found that the parity is even for the Andreev retroreflection (ARR) and odd for specular Andreev reflection (SAR). We attribute this remarkable phenomenon to the distinct topology of the band structure of graphene and the specular Andreev reflection involving two energy bands with different parity symmetry. As a result of odd parity of SAR, the SAR probability of a four-terminal system with two superconducting leads (two reflection interfaces) can be zero even when the system is asymmetric due to the quantum interference of two ARs.

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The focusing of electron flow in a bipolar Graphene ribbon with different chiralities

The focusing of electron flow in a symmetric p-n junction (PNJ) of graphene ribbon with different chiralities is studied. Considering the PNJ with the sharp interface, in a armchair ribbon, the electron flow emitting from $(-L,0)$ in n-region can always be focused perfectly at $(L,0)$ in p-region in the whole Dirac fermion regime, i.e. in whole regime $E_0<t$ where $E_0$ is the distance between Dirac-point energy and Fermi energy and $t$ is the nearest hopping energy. For the bipolar ribbon with zigzag edge, however, the incoming electron flow in n-region is perfectly converged in p-region only in a very low energy regime with $E_0<0.05t$. Moreover, for a smooth PNJ, electrons are backscattered near PNJ, which weakens the focusing effect. But the focusing pattern still remains the same as that of the sharp PNJ. In addition, quantum oscillation in charge density occurs due to the interference between forward and backward scattering. Finally, in the presence of weak perpendicular magnetic field, charge carriers are deflected in opposite directions in the p-region and n-region. As a result, the focusing effect is smeared. The lower energy $E_0$, the easier the focusing effect is destroyed. For the high energy $E_0$ (e.g. $E_0=0.9t$), however, the focusing effect can still survive in a moderate magnetic field on order of one Tesla.

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Nernst and Seebeck effect in a graphene nanoribbon

The thermoelectric power, including the Nernst and Seebeck effects, in graphene nanoribbon is studied. By using the non-equilibrium Green function combining with the tight-binding Hamiltonian, the Nernst and Seebeck coefficients are obtained. Due to the electron-hole symmetry, the Nernst coefficient is an even function of the Fermi energy while the Seebeck coefficient is an odd function regardless of the magnetic field. In the presence of a strong magnetic field, the Nernst and Seebeck coefficients are almost independent of the chirality and width of the nanoribbon, and they show peaks when the Fermi energy crosses the Landau levels. The height of $n$-th (excluding $n=0$) peak is $[\ln2/|n|]$ for the Nernst effect and is $\ln2/n$ for the Seebeck effect. For the zeroth peak, it is abnormal with height $[2\ln2]$ for the Nernst effect and the peak disappears for the Seebeck effect. When the magnetic field is turned off, however, the Nernst effect is absent and only Seebeck effect exists. In this case, the Seebeck coefficient strongly depends on the chirality of the nanoribbon. The peaks are equidistant for the nanoribbons with zigzag edge but are irregularly distributed for the armchair edge. In particular, for the insulating armchair ribbon, the Seebeck coefficient can be very large near the Dirac point. When the magnetic field varies from zero to large values, the differences among the Seebeck coefficients for different chiral ribbons gradually vanish and the nonzero value of Nernst coefficient appears first near the Dirac point then gradually extents to the whole energy region.

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The scaling feature of the magnetic field induced Kondo-peak splittings

By using the full density matrix approach to spectral functions within the numerical renormalization group method, we present a detailed study of the magnetic field induced splittings in the spin-resolved and the total spectral densities of a Kondo correlated quantum dot described by the single level Anderson impurity model. The universal scaling of the splittings with magnetic field is examined by varying the Kondo scale either by a change of local level position at a fixed tunnel coupling or by a change of the tunnel coupling at a fixed level position. We find that the Kondo-peak splitting $Δ/T_K$ in the spin-resolved spectral function always scales perfectly for magnetic fields $B<8T_K$ in either of the two $T_K$-adjusted paths. Scaling is destroyed for fields $B>10T_K$. On the other hand, the Kondo peak splitting $δ/T_K$ in the total spectral function does slightly deviate from the conventional scaling theory in whole magnetic field window along the coupling-varying path. Furthermore, we show the scaling analysis suitable for all field windows within the Kondo regime and two specific fitting scaling curves are given from which certain detailed features at low field are derived. In addition, the scaling dimensionless quantity $Δ/2B$ and $δ/2B$ are also studied and they can reach and exceed 1 in the large magnetic field region, in agreement with a recent experiment [T.M. Liu, et al., Phys. Rev. Lett. 103, 026803 (2009)].

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Giant Intrinsic Spin-Orbit Coupling in Bilayer Graphene

The intrinsic spin-orbit coupling (ISOC) in bilayer graphene is investigated. We find that the largest ISOC between $π$ electrons origins from the following hopping processes: a $π$ electron hops to $σ$ orbits of the other layer and further to $π$ orbits with the opposite spin through the intra-atomic ISOC. The magnitude of this ISOC is about $0.46meV$, 100 times larger than that of the monolayer graphene. The Hamiltonians including this ISOC in both momentum and real spaces are derived. Due to this ISOC, the low-energy states around the Dirac point exhibit a special spin polarization, in which the electron spins are oppositely polarized in the upper and lower layers. This spin polarization state is robust, protected by the time-reversal symmetry. In addition, we provide a hybrid system to select a certain spin polarization state by an electric manipulation.

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Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction

Electronic transport in a graphene-based ferromagnetic/normal/ferromagnetic junction is investigated by means of Landauer-Büttiker formulism and the nonequilibrium Green's function technique. For the zigzag edge case, the results show that the conductance is always larger than $e^{2}/h$ for the parallel configuration of lead magnetizations, but for the antiparallel configuration the conductance becomes zero because of the band-selective rule. So a magnetoresistance (MR) plateau emerges with the value 100% when the Fermi energy is located around the Dirac point. Besides, choosing narrower graphene ribbons can obtain the wider 100% MR plateaus and the length change of the central graphene region does not affect the 100% MR plateaus. Although the disorder will reduce the MR plateau, the plateau value can be still kept about 50% even in a large disorder strength case. In addition, when the magnetizations of the left and right leads have a relative angle, the conductance changes as a cosine function of the angle. What is more, for the armchair edge case, the MR is usually small. So, it is more favorable to fabricate the graphene-based spin valve device by using the zigzag edge graphene ribbon.

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CT invariant quantum spin Hall effect in a ferromagnetic graphene

We predict a quantum spin Hall effect (QSHE) in the ferromagnetic graphene under a magnetic field. Unlike the previous QSHE, this QSHE appears in the absence of any spin-orbit interaction, thus, arrived from a different physical origin. The previous QSHE is protected by the time-reversal (T) invariance. This new QSHE is protected by the CT invariance, where C is the charge conjugation operation. Due to this QSHE, the longitudinal resistance exhibits quantum plateaus. The plateau values are at 1/2, 1/6, 3/28, ..., (in the unit of $h/e^2$), depending on the filling factors of the spin-up and spin-down carriers. The spin Hall resistance is also investigated and is found to be robust against the disorder.

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Controllable Andreev retroreflection and specular Andreev reflection in a four-terminal graphene-superconductor hybrid system

We report the investigation of electron transport through a four-terminal graphene-superconductor hybrid system. Due to the quantum interference of the reflected holes from two graphene-superconductor interfaces with phase difference $θ$, it is found that the specular Andreev reflection vanishes at $θ=0$ while the Andreev retroreflection disappears at $θ=π$. This means that the retroreflection and specular reflection can be easily controlled and separated in this device. In addition, due to the diffraction effect in the narrow graphene nanoribbon, the reflected hole can exit from both graphene terminals. As the width of nanoribbon increases, the diffraction effect gradually disappears and the reflected hole eventually exits from a particular graphene terminal depending on the type of Andreev reflection.

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The electric current induced heat generation in a strongly interacting quantum dot in the Coulomb blockade regime

The heat generation by an electric current flowing through a quantum dot with the dot containing both electron-electron interaction and electron-phonon interaction, is studied. Using the non-equilibrium Keldysh Green's function method, the current-induced heat generation is obtained. We find that for a small phonon frequency, heat generation is proportional to the current. However, for a large phonon frequency, heat generation is in general qualitatively different from the current. It is non-monotonic with current and many unique and interesting behaviors emerge. The heat generation could be very large in the Coulomb blockade region, in which the current is very small due to the Coulomb blockade effect. On the other hand, in the resonant tunneling region, the heat generation is very small despite a large current, an ideal condition for device operation. In the curve of heat generation versus the bias, a negative differential of the heat generation is exhibited, although the current is always monotonously increasing with the bias voltage.

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Numerical study of the topological Anderson insulator in HgTe/CdTe quantum wells

We study the disorder effect on the transport properties in the HgTe/CdTe semiconductor quantum wells. We confirm that at a moderate disorder strength, the initially un-quantized two terminal conductance becomes quantized, and the system makes a transition to the novel topological Anderson insulator (TAI). Conductances calculated for the stripe and cylinder samples reveal the topological feature of TAI and supports the idea that the helical edge states may cause the anomalous quantized plateaus. The influence of disorder is studied by calculating the distributions of local currents. Base on the above-mentioned picture, the phenomena induced by disorder in the quantum spin Hall region and TAI region are directly explained. Our study of the local current configurations shed further light on the mechanism of the anomalous plateau.

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Scanning tunneling spectroscopy of a magnetic atom on graphene in the Kondo regime

The Kondo effect in the system consisting of a magnetic adatom on the graphene is studied. By using the non-equilibrium Green function method with the slave-boson mean field approximation, the local density of state (LDOS) and the conductance are calculated. For a doped graphene, the Kondo phase is present at all time. Surprisingly, two kinds of Kondo regimes are revealed. But for the undoped graphene, the Kondo phase only exists if the adatom's energy level is beyond a critical value. The conductance is similar to the LDOS, thus, the Kondo peak in the LDOS can be observed with the scanning tunneling spectroscopy. In addition, in the presence of a direct coupling between the STM tip and the graphene, the conductance may be dramatically enhanced, depending on the coupling site.

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Quantum transport through a graphene nanoribbon-superconductor junction

We study the electron transport through a graphene nanoribbon-superconductor junction. Both zigzag and armchair edge graphene nanoribbons are considered, and the effects of the magnetic field and disorder on the transport property are investigated. By using the tight-binding model and the non-equilibrium Green's function method, the expressions of the current, conductance, normal tunneling coefficient, and Andreev reflection coefficient are obtained. For a clean system and at zero magnetic field, the linear conductance increases approximatively in a linear fashion with the on-site energy. In the presence of a magnetic field and a moderate disorder, the linear conductance exhibits plateau structures for both armchair and zigzag edges. The plateau values increase with the width of the graphene ribbon. With a wide sample width, a saturated plateau value of $|ν|e^2/h$ emerges at the filling factor $ν$. For a small filling factor, the conductance can reach the saturated value at a small width, but for a high filling factor, it requires to have a quite wide sample width to reach the saturated value. In particular, the Andreev reflection coefficient is always at 0.5 after reaching the saturated value, independent of any system parameters. In addition, we also consider the finite bias case, in which the Andreev reflection coefficient and normal tunneling coefficient are studied.

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Spin Bias Measurement Based on a Quantum Point Contact

Electron charge transport through a quantum point contact (QPC) driven by an asymmetric spin bias is studied. A large charge current is induced when the transmission coefficient of the QPC jumps from one integer plateau to the next. Furthermore, for an open external circuit, the induced charge bias instead of the charge current is found to be quite large. It provides an efficient and practical way to detect spin bias by using a very simple device, a QPC or a STM tip. In addition, with the aid of magnetic field, polarization direction of the spin bias can also be determined.

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Topological insulator: a new quantized spin Hall resistance robust to dephasing

The influence of dephasing on the quantum spin Hall effect (QSHE) is studied. In the absence of dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against the normal dephasing but fragile with the spin dephasing. Thus, these quantum plateaus only survive in mesoscopic samples. Moreover, the longitudinal resistance increases linearly with the sample length but is insensitive to the sample width. These characters are in excellent agreement with the recent experimental results [science {\bf 318}, 766 (2007)]. In addition, we define a new spin Hall resistance that also exhibits quantum plateaus. In particular, these plateaus are robust against any type of dephasing and therefore, survive in macroscopic samples and better reflect the topological nature of QSHE.

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Double quantum dot as detector of spin bias

It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the quantum dot. It is found that the spin polarization in the left and right dots may be induced spontaneously while the intra-dot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit an charge bias instead of a charge current will be induced in equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.

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Spin Nernst effect and Nernst effect in two-dimensional electron systems

We study the Nernst effect and the spin Nernst effect, that a longitudinal thermal gradient induces a transverse voltage and a spin current. A mesoscopic four-terminal cross-bar device having the Rashba spin-orbit interaction (SOI) under a perpendicular magnetic field is considered. For zero SOI, the Nernst coefficient peaks when the Fermi level crosses the Landau Levels. In the presence of the SOI, the Nernst peaks split, and the spin Nernst effect appears and exhibits a series of oscillatory structures. The larger SOI is or the weaker magnetic field is, the more pronounced the spin Nernst effect is. The results also show that the Nernst and spin Nernst coefficients are sensitive to the detailed characteristics of the sample and the contacts. In addition, the Nernst effect is found to survive in strong disorder than the spin Nernst effect does.

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Josephson current transport through a Quantum Dot in an Aharonov-Bohm Ring

The Josephson current through an Aharonov-Bohm (AB) interferometer, in which a quantum dot (QD) is situated on one arm and a magnetic flux $Φ$ threads through the ring, has been investigated. With the existence of the magnetic flux, the relation of the Josephson current and the superconductor phase is complex, and the system can be adjusted to $π$ junction by either modulating the magnetic flux or the QD's energy level $\varepsilon_d$. Due to the electron-hole symmetry, the Josephson current $I$ has the property $I(\varepsilon_d,Φ)=I(-\varepsilon_d,Φ+π)$. The Josephson current exhibits a jump when a pair of Andreev bound states aligns with the Fermi energy. The condition for the current jump is given. In particularly, we find that the position of the current jump and the position of the maximum value of the critical current $I_c$ are identical. Due to the interference between the two paths, the critical current $I_c$ versus the QD's level $\varepsilon_d$ shows a typical Fano shape, which is similar to the Fano effect in the corresponding normal device. But they also show some differences. For example, the critical current never reaches zero for any parameters, while the current in the normal device can reach zero at the destruction point.

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Disorder-induced enhancement of transport through graphene p-n junctions

We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and disordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits plateau structure at suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes can not be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with the recent experiment.

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