Searcharxiv⌕ Search

arXiv subjects

Qinghua Zhang

Publications and source records attributed to Qinghua Zhang.

At least 127 records · Page 7Linked to original sources

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with shadow-wall growth of superconductor structures, have demonstrated this scalability by achieving various network structures. However, the noticeable lattice mismatch at the nanowire-substrate interface, acting as a disorder source, imposes a serious obstacle along with this roadmap. Here, combining selective area and shadow-wall growth, we demonstrate the fabrication of PbTe-Pb hybrid nanowires - another potentially promising Majorana system - on a nearly perfectly lattice-matched substrate CdTe, all done in one molecular beam epitaxy chamber. Transmission electron microscopy shows the single-crystal nature of the PbTe nanowire and its atomically sharp and clean interfaces to the CdTe substrate and the Pb overlayer, without noticeable inter-diffusion or strain. The nearly ideal interface condition, together with the strong screening of charge impurities due to the large dielectric constant of PbTe, hold promise towards a clean nanowire system to study Majorana zero modes and topological quantum computing.

cond-mat.mes-hall↗

Spatially separated superconductivity and enhanced charge-density-wave ordering in IrTe2 nano-flake

The interplay among various collective electronic states such as superconductivity (SC) and charge density wave (CDW) is of tremendous significance in low-dimensional transition metal dichalcogenides. Thus far, a consensus on the relationship between SC and CDW has not been established in IrTe2, where either competing or collaboration pictures have been suggested in the bulk or thick flakes. Here, we use the state-of-art Au-assisted exfoliation method to overcome the obstacle of interlayer Te-Te bonding, cleaving the IrTe2 down to monolayer for the first time. A striking feature revealed by angle-resolved polarized Raman spectroscopy (ARPRS) and electrical transport measurements is the concurrence of phase separation in one single piece of nano-flake, i.e. the superconducting (P-3m1) and CDW (P-3) area. In the pure SC area, the dimensional fluctuations completely suppress the CDW ordering and induce SC at 3.5 K. Meanwhile, the pure CDW area with much enhanced TCDW at 605 K (compared to TCDW = 280 K in bulk) is always accompanied by a unique wrinkle pattern. Detailed analyses suggest the local strain-induced bond breaking of the Te-Te dimer facilitates the emergence of the CDW order. Our works provide compelling evidence of competition between SC and CDW, highlighting the importance of microstructure in determining the ground states of IrTe2.

cond-mat.supr-con↗

Presence of $s$-wave pairing in Josephson junctions made of twisted ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ flakes

Since the discovery of high temperature superconductivity in cuprates, Josephson junction based phase-sensitive experiments are believed and used to provide the most convincing evidence for determining the pairing symmetry. Regardless of different junction materials and geometries used, quantum tunneling involved in these experiments is essentially a nanoscale process, and thus, actual experimental results are extremely sensitive to atomic details of the junction structures. The situation has led to controversial results as to the nature of the pairing symmetry of cuprates: while in-plane junction experiments generally support $d$-wave pairing symmetry, those based on out-of-plane ($c$-axis) Josephson junctions between two rotated cuprate blocks favor $s$-wave pairing. In this work, we revisit the $c$-axis experiment by fabricating Josephson junctions with atomic-level control in their interface structure. We fabricate over 90 junctions of ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO) flakes by state-of-the-art exfoliation technique and obtain atomically flat junction interfaces in the whole junction regions as characterized by high resolution transmission electron microscopy (TEM). Notably, the resultant uniform junctions at various twist angles all exhibit a single tunneling branch behavior, suggesting that only the first half a unit cell on both sides of the twisted flakes is involved in Josephson tunneling process. With such well-defined geometry/structure and the characteristic single tunneling branch, we repeatedly observe Josephson tunneling at a nominal twist angle of 45 degrees, which is against the expectation from a purely $d$-wave pairing scenario. Our results strongly favor the scenario of a persistent $s$-wave order parameter in the junction.

cond-mat.supr-con↗

A magnetic Weyl semimetallic phase in thin films of Eu$_2$Ir$_2$O$_7$

The interplay between electronic interactions and strong spin-orbit coupling is expected to create a plethora of fascinating correlated topological states of quantum matter. Of particular interest are magnetic Weyl semimetals originally proposed in the pyrochlore iridates, which are only expected to reveal their topological nature in thin film form. To date, however, direct experimental demonstrations of these exotic phases remain elusive, due to the lack of usable single crystals and the insufficient quality of available films. Here, we report on the discovery of the long-sought magnetic Weyl semi-metallic phase in (111)-oriented Eu$_2$Ir$_2$O$_7$ high-quality epitaxial thin films. The topological magnetic state shows an intrinsic anomalous Hall effect with colossal coercivity but vanishing net magnetization, which emerges below the onset of a peculiar magnetic phase with all-in-all-out antiferromagnetic ordering. The observed anomalous Hall conductivity arises from the non-zero Berry curvature emanated by Weyl node pairs near the Fermi level that act as sources and sinks of Berry flux, activated by broken cubic crystal symmetry at the top and bottom terminations of the thin film.

cond-mat.str-el↗

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm2V-1s-1 at the carrier density ~ 4.0 x 10^20 cm-3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 x 10^20 cm-3), the electron mobility value of 121 cm2V-1s-1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.

cond-mat.mtrl-sci↗

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e2/h at temperature of 1.6 K and magnetic field of 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.

cond-mat.mes-hall↗

In Operando magnetometry study on the charge storage mechanism of SnCo alloy lithium ion batteries

In view of the long-standing controversy over the reversibility of transition metals in Sn-based alloys as anode for Li-ion batteries, an in situ real-time magnetic monitoring method was used to investigate the evolution of Sn-Co intermetallic during the electrochemical cycling. Sn-Co alloy film anodes with different compositions were prepared via magnetron sputtering without using binders and conductive additives. The magnetic responses showed that the Co particles liberated by Li insertion recombine fully with Sn during the delithiation to reform Sn-Co intermetallic into stannum richer phases Sn7Co3. However, as the Co content increases, it can only recombine partially with Sn into cobalt richer phases Sn3Co7. The unconverted Co particles may form a dense barrier layer and prevent the full reaction of Li with all the Sn in the anode, leading to lower capacities. These critical results shed light on understanding the reaction mechanism of transition metals, and provide valuable insights toward the design of high-performance Sn alloy based anodes.

cond-mat.mtrl-sci↗

Emergent Magnetic Phenomenon with Unconventional Structure in Epitaxial Manganate Thin Films

A variety of emergent phenomena has been enabled by interface engineering in the complex oxides heterostructures. While extensive attention has been attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin film is, however,controversial. Here, it is reported that the ferromagnetism in 2 and 5 unit cells thick LMO films epitaxially deposited (001)-SrTiO3 substrates ferromagnetic/ferromagnetic coupling in 8 and 10-unit-cell ones, and a striking ferromagnetic/antiferromagnetic pinning effect with apparent positive exchange bias in 15 and 20-unit-cell ones are observed. This novel phenomenon in both 15 and 20-unit-cell films indicates a coexistence of three magnetic orderings in a single LMO film.The high-resolution scanning transmission electron microscopy suggests a P21/n to Pbnm symmetry transition from interface to surface, with the spatial stratification of MnO6 octahedral morphology, corresponding to different magnetic orderings. These results should shed some new lights on manipulating the functionality of oxides by interface engineering.

cond-mat.str-el↗

Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides

Manipulation of octahedral distortion at atomic length scale is an effective means to tune the physical ground states of functional oxides. Previous work demonstrates that epitaxial strain and film thickness are variable parameters to modify the octahedral rotation and tilt. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetic response in SrRuO3 (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO) layers. The infinite-layered CuO2 in SCO exhibits a structural transformation from "planar-type" to "chain-type" as reducing film thickness. These two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and hybridization strength between Ru 4d and O 2p orbitals, leading to a significant change in the magnetoresistance and anomalous Hall resistivity of SRO layers. These findings could launch further investigations into adaptive control of magnetoelectric properties in quantum oxide heterostructures using oxygen coordination.

cond-mat.mtrl-sci↗

Near-Room Temperature Ferromagnetic Insulating State in Highly Distorted LaCoO2.5 with CoO5 Square Pyramids

Dedicated control of oxygen vacancies is an important route to functionalizing complex oxide films. It is well-known that tensile strain significantly lowers the oxygen vacancy formation energy, whereas compressive strain plays a minor role. Thus, atomically reconstruction by extracting oxygen from a compressive-strained film is challenging. Here we report an unexpected LaCoO2.5 phase with a zigzag-like oxygen vacancy ordering through annealing a compressive-strained LaCoO3 in vacuum. The synergetic tilt and distortion of CoO5 square pyramids with large La and Co shifts are quantified using scanning transmission electron microscopy. The large in-plane expansion of CoO5 square pyramids weaken the crystal-field splitting and facilitated the ordered high-spin state of Co2+, which produces an insulating ferromagnetic state with a Curie temperature of ~284 K and a saturation magnetization of ~0.25 μB/Co. These results demonstrate that extracting targeted oxygen from a compressive-strained oxide provides an opportunity for creating unexpected crystal structures and novel functionalities.

cond-mat.mtrl-sci↗

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

cond-mat.mtrl-sci↗

Realization of AlSb in the double layer honeycomb structure: a robust new class of two-dimensional material

Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. The successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.

cond-mat.mtrl-sci↗

Ultrastrong, Ultraflexible, and Ultratransparent Polyethylene Cellular Nanofilms

Light weight and mechanically robust cellular polymer nanofilms provide materials solutions to many cutting-edge technologies, such as high-flux membrane filtration, ultrathin flexible energy storage, and skin-conformable devices. However, it remains challenging to fabricate hand manipulatable cellular polymer nanofilms for use as self-standing structural materials. Herein, we used a sequential planar extension approach to transform low-entanglement ultrahigh molecular weight polyethylene (UHMWPE) gel films dispersed in porogenic polyethylene oligomers into cellular nanofilms consisting of stretch-dominated triangular cells of molecularly anisotropic cell edges. The microstructure afforded the cellular nanofilm, which had a thickness down to 20 nm, with a unique combination of ultratransparency (>98.5%), ultrahigh in-plane tensile strength (1071 MPa.cm^3.g^(-1)), and ultrahigh flexibility: a 43 nm thick film can deflect reversibly up to 8.0 mm in depth (185,000 times) under a spherical indentation load. As an application, we fabricated the nanofilm into a freestanding ultratransparent respiratory face covering. The new polyethylene cellular nanofilms are expected to represent a new class of platform membranes for advancing fundamental and technological development.

cond-mat.mtrl-sci↗

Strong Ferromagnetism Achieved via Breathing Lattices in Atomically Thin Cobaltites

Low-dimensional quantum materials that remain strongly ferromagnetic down to mono layer thickness are highly desired for spintronic applications. Although oxide materials are important candidates for next generation of spintronic, ferromagnetism decays severely when the thickness is scaled to the nano meter regime, leading to deterioration of device performance. Here we report a methodology for maintaining strong ferromagnetism in insulating LaCoO3 (LCO) layers down to the thickness of a single unit cell. We find that the magnetic and electronic states of LCO are linked intimately to the structural parameters of adjacent "breathing lattice" SrCuO2 (SCO). As the dimensionality of SCO is reduced, the lattice constant elongates over 10% along the growth direction, leading to a significant distortion of the CoO6 octahedra, and promoting a higher spin state and long-range spin ordering. For atomically thin LCO layers, we observe surprisingly large magnetic moment (0.5 uB/Co) and Curie temperature (75 K), values larger than previously reported for any mono layer oxide. Our results demonstrate a strategy for creating ultra thin ferromagnetic oxides by exploiting atomic hetero interface engineering,confinement-driven structural transformation, and spin-lattice entanglement in strongly correlated materials.

cond-mat.mtrl-sci↗

Strain-mediated high conductivity in ultrathin antiferromagnetic metallic nitrides

Strain engineering provides the ability to control the ground states and associated phase transition in the epitaxial films. However, the systematic study of intrinsic characters and their strain dependency in transition-metal nitrides remains challenging due to the difficulty in fabricating the stoichiometric and high-quality films. Here we report the observation of electronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dimensionality. Shrinking the film thickness to a critical value of ~ 30 unit cells, a profound conductivity reduction accompanied by unexpected volume expansion is observed in CrN films. The electrical conductivity is observed surprisingly when the CrN layer as thin as single unit cell thick, which is far below the critical thickness of most metallic films. We found that the metallicity of an ultrathin CrN film recovers from an insulating behavior upon the removal of as-grown strain by fabrication of first-ever freestanding nitride films. Both first-principles calculations and linear dichroism measurements reveal that the strain-mediated orbital splitting effectively customizes the relatively small bandgap at the Fermi level, leading to exotic phase transition in CrN. The ability to achieve highly conductive nitride ultrathin films by harness strain-controlling over competing phases can be used for utilizing their exceptional characteristics.

cond-mat.mtrl-sci↗

The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure

Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength of interfacial magnetic proximity effect (MPE) is still too weak to achieve the quantum anomalous Hall effect and many other topological quantum phenomena. Recently, a new approach based on intercalation of atomic layers of MI, referred to as magnetic extension, was proposed to realize strong MPE [2D Mater. 4, 025082(2017)]. Motivated by this proposal, here, we study a magnetic extension system prepared by molecular beam epitaxy growth of MnSe thin films on topological insulator (Bi,Sb)2Te3. Direct evidence is obtained for intercalation of MnSe atomic layer into a few quintuple layers of (Bi,Sb)2Te3, forming either a double magnetic septuple layer (SL) or an isolated single SL at the interface, where one SL denotes a van der Waals building block consisting of B-A-B-Mn-B-A-B (A=Bi1-xSbx, B= Te1-ySey). The two types of interfaces (namely TI/mono-SL and TI/bi-SL) have different MPE, which is manifested as distinctively different transport behaviors. Specifically, the mono-SL induces a spinflip transition with a sharp change at small magnetic field in the anomalous Hall effect of TI layers, while the bi-SL induces a spin-flop transition with a slow change at large field. Our work demonstrates a useful platform to realize the full potential of the magnetic extension approach for pursuing novel topological physics and related device applications.

physics.app-ph↗

Robust ferromagnetism in highly strained SrCoO3 thin films

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

cond-mat.str-el↗

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

cond-mat.str-el↗