arXiv subjects

Qinghua Zhang

Publications and source records attributed to Qinghua Zhang.

At least 109 records · Page 6Linked to original sources

arXiv2022

Proximity effect in PbTe-Pb hybrid nanowire Josephson junctions

Semiconductor-superconductor hybrid nanowires are a leading material platform for the realization of Majorana zero modes. The semiconductors in previous studies are dominantly InAs or InSb. In this work, we show the induced superconductivity in a PbTe nanowire epitaxially coupled to a superconductor Pb. The Josephson junction device based on this hybrid reveals a gate-tunable supercurrent in the open regime and a hard superconducting gap in the tunneling regime. By demonstrating the superconducting proximity effect, our result can enable Majorana searches and other applications like gate-tunable qubits in a new semiconductor system.

cond-mat.mes-hall↗

arXiv2022

Engineered Kondo screening and nonzero Berry phase in SrTiO3/LaTiO3/SrTiO3 heterostructures

Controlling the interplay between localized spins and itinerant electrons at the oxide interfaces can lead to exotic magnetic states. Here we devise SrTiO3/LaTiO3/SrTiO3 heterostructures with varied thickness of the LaTiO3 layer (n monolayers) to investigate the magnetic interactions in the two-dimensional electron gas system. The heterostructures exhibit significant Kondo effect when the LaTiO3 layer is rather thin (n = 2, 10), manifesting the strong interaction between the itinerant electrons and the localized magnetic moments at the interfaces, while the Kondo effect is greatly inhibited when n = 20. Notably, distinct Shubnikov-de Haas oscillations are observed and a nonzero Berry phase of π is extracted when the LaTiO3 layer is rather thin (n = 2, 10), which is absent in the heterostructure with thicker LaTiO3 layer (n = 20). The observed phenomena are consistently interpreted as a result of sub-band splitting and symmetry breaking due to the interplay between the interfacial Rashba spin-orbit coupling and the magnetic orderings in the heterostructures. Our findings provide a route for exploring and manipulating nontrivial electronic band structures at complex oxide interfaces.

cond-mat.str-el↗

arXiv2022

Strengthened proximity effect at grain boundaries to enhance inter-grain supercurrent in Ba1-xKxFe2As2 superconductors

Iron-based superconductors have great potential for high-power applications due to their prominent high-field properties. One of the central issues in enhancing the critical current density of iron-based superconducting wires is to reveal the roles and limitations of grain boundaries in supercurrent transport. Here, we finely tuned the electronic properties of grain boundaries by doping Ba1-xKxFe2As2 superconductors in a wide range (0.25<x<0.598). It is found that the intra-grain Jcintra peaks near x~0.287, while the inter-grain Jcinter has a maximum at about x~0.458. Remarkably, the grain boundary transparency parameter defined as Jcinter/Jcintra rises monotonically with doping. Through detailed microscopic analysis, we suggest that the FeAs segregation phase commonly existing at grain boundaries and the adjacent grains constitute superconductor-normal metal-superconductor (SNS) Josephson junctions which play a key role in transporting supercurrent. A sandwich model based on the proximity effect and the SNS junction is proposed to well interpret our data. It is found that overdoping in superconducting grains largely strengthens the proximity effect and consequently enhances the intergrain supercurrent. Our results will shed new insights and inspirations for improving the application parameters of iron-based superconductors by grain boundary engineering.

cond-mat.supr-con↗

arXiv2022

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications.

cond-mat.mtrl-sci↗

arXiv2022

Insulator-metal-superconductor transition in medium-entropy van der Waals compound MEPSe3 (ME=Fe, Mn, Cd, and In) under high pressures

MPX3 (M=metals, X=S or Se) represents a large family of van der Waals (vdW) materials featuring with P-P dimers of ~2.3 Å separation. Its electrical transport property and structure can hardly be tuned by the intentional chemical doping and ionic intercalation. Here, we employ an entropy-enhancement strategy to successfully obtain a series of medium-entropy compounds MEPSe3 (ME=Fe, Mn, Cd and In), in which the electrical and magnetic properties changed simultaneously. Lone-pair electrons of P emerge due to the dissociation of the dimers as evidenced by a 35% elongation in the P-P interatomic distance. The band gap widens from 0.1 eV to 0.7 eV by this dissociation. Under external physical pressure up to ~50 GPa, a giant collapse of up to 15% in the c-axis happens, which is in contrast to the in-plane shrinkage of their counterparts Fe/MnPSe3. It leads to the recombination of P3- with lone pair electrons into a P-P dimer and the smallest bulk modulus of 28 GPa in MPX3. The MEPSe3 transits from a spin-glass insulator to metal, and to superconductor, which is rarely observed in the MPX3. Our findings highlight the P-P dimer as an indicator to probe diverse electronic structure and the effectiveness of entropy-enhancement in materials science.

cond-mat.supr-con↗

arXiv2022

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.

cond-mat.mtrl-sci↗

arXiv2022

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

cond-mat.mtrl-sci↗

arXiv2022

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P)

Here we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in XδIr4X12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct paring mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of XδIr4X12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements.

cond-mat.supr-con↗

arXiv2022

Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers

Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT μFE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mAμm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.

physics.app-ph↗

arXiv2022

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formation of 2DEG at the interface between the rock-salt BaO and SrTiO3. The highest electron mobility reaches 69000 cm^2 V.S^-1 at 2 K, leading to the typical Shubniko de Haas (SdH) oscillations under the high magnetic fields. The presence of SdH oscillations at different field-angles reveals a quasi-two-dimensional character of the Fermi surface. The first-principles calculations suggest that the effective charge transfer from the BaO to Ti 3dxy orbital at the interfaces is responsible to the observed high carrier mobility. Our results demonstrate that the BaO/STO heterointerface is a platform for exploring the correlated quantum phases, opening a door to the low-power and mesoscopic electronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Epitaxial stabilization of an orthorhombic Mg-Ti-O superconductor

The family of titanium oxide superconductors exhibits many intriguing phenomena comparable to cuprates and iron pnictides/chalcogenides, and thus provides an ideal platform to contrastively study the unconventional pairing mechanism of high-temperature superconductors. Here, we successfully deposit superconducting Mg-Ti-O films on MgAl$_2$O$_4$ substrates with three principal orientations by ablating a MgTi$_2$O$_4$ target. Particularly, it is striking to observed that a single-crystalline film of an unintended structure has been grown on the (011)-oriented substrate, with the highest zero resistance transition temperature ($T_{\mathrm{c}0}$) of 5.0 K among them. The film has a highly reduced Mg/Ti ratio and an orthorhombic Ti$_9$O$_{10}$-like structure (denoted as Mg: Ti$_9$O$_{10}$), demonstrated by further characterizations of chemical composition and structure. Such a structure is unstable in bulk but favorable to be epitaxially stabilized on the (011)-surface of MgAl$_2$O$_4$ due to a relatively small strain at the formed interface. An isotropic upper critical field ($B_{\mathrm{c}2}$) up to 13.7 T that breaks the Pauli limit is observed in the Mg: Ti$_9$O$_{10}$ film, analogous to other superconducting titanium oxides. The similarity points to a common origin for the superconductivity in the family, which will provide valuable opinions for the mechanism of unconventional superconductivity in transition metal compounds.

cond-mat.supr-con↗

arXiv2021

Ferromagnetic Enhancement in LaMnO3 Films with Release and Flexure

A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is largely enhanced by 56% after releasing from a brand-new phase of tetragonal strontium aluminate buffer layer, and is significantly increased by 92% with bending films to a curvature of 1 mm-1 using a water-assisted direct-transferring method. Meanwhile, the Curie temperature of LMO films has been improved by 13 K. High-resolution spherical aberration-corrected scanning transmission electron microscopy and first-principles calculations unambiguously demonstrate that the enhanced ferromagnetism is attributed to the strengthened Mn-O-Mn super-exchange interactions from the augmented characteristics of the unconventional P21/n structure caused by the out-of-plane lattice shrinking after strain releasing and increased flexure degree of freestanding LMO films. This work paves a way to achieve large-scale and crack-and-wrinkle-free freestanding films of oxides with largely improved functionalities.

cond-mat.mtrl-sci↗

arXiv2021

Observation of Aharonov-Bohm effect in PbTe nanowire networks

We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices.

cond-mat.mes-hall↗

arXiv2021

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for developing high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-inch titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactive magnetron sputtering. Combined measurements of spectroscopic ellipsometer and electrical transport reveal the superior plasmonic and superconducting performance of TiN/F-mica films owing to the high single crystallinity. More interestingly, the superconductivity of these flexible TiN films can be manipulated by the bending states, and enhanced superconducting critical temperature TC is observed in convex TiN films with in-plane tensile strain. Density-functional-theory calculations uncover that the strain can tune the electron-phonon interaction strength and resultant superconductivity of TiN films. This study provides a promising route towards integrating scalable single-crystalline conductive transition-metal nitride films with flexible electronics for high-performance plasmonics and superconducting electronics.

cond-mat.supr-con↗

arXiv2021

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Exchange coupling in synthetic anion-engineered chromia heterostructures

Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-doping is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen doping. Unlike antiferromagnetic monoanionic chromium oxide and nitride phases, chromium oxynitride exhibits a robust ferromagnetic and insulating state, as demonstrated by the combination of multiple magnetization probes and theoretical calculations. With increasing the nitrogen content, the crystal structure of chromium oxynitride transits from trigonal (R3c) to tetragonal (4mm) phase and its saturation magnetization reduces significantly. Furthermore, we achieve a large and controllable exchange bias field in the chromia heterostructures by synthetic anion engineering. This work reflects the anion engineering in functional oxides towards the potential applications in giant magnetoresistance and tunnelling junctions of modern magnetic sensors and read heads.

cond-mat.mtrl-sci↗

arXiv2021

Dynamics of anisotropic oxygen-ion migration in strained cobaltites

Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hopping towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in-situ thermal activation in an atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain, but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to OVC, determine the crucial role of tolerance factor for OVC stability and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable ionic-oxide electronics.

cond-mat.mtrl-sci↗

arXiv2021

Discovery of two families of VSb-based compounds with V-kagome lattice

We report the structure and physical properties of two newly-discovered compounds AV8Sb12 and AV6Sb6 (A = Cs, Rb), which have C2 (space group: Cmmm) and C3 (space group: R-3m) symmetry, respectively. The basic V-kagome unit is present in both compounds, but stacking differently. A V2Sb2 layer is sandwiched between two V3Sb5 layers in AV8Sb12, altering the V-kagome lattice and lowering the symmetry of kagome layer from hexagonal to orthorhombic. In AV6Sb6, the building block is a more complex slab made up of two half-V3Sb5 layers that are intercalated by Cs cations along the c-axis. Transport property measurements demonstrate that both compounds are nonmagnetic metals, with carrier concentrations at around 1021cm-3. No superconductivity has been observed in CsV8Sb12 above 0.3 K under in-situ pressure up to 46 GPa. In contrast to CsV3Sb5, theoretical calculations and angle-resolved photoemission spectroscopy (ARPES) reveal a quasi-two-dimensional electronic structure in CsV8Sb12 with C2 symmetry and no van Hove singularities near the Fermi level. Our findings will stimulate more research into V-based kagome quantum materials.

cond-mat.supr-con↗