arXiv subjects

Qinghua Zhang

Publications and source records attributed to Qinghua Zhang.

At least 145 records · Page 8Linked to original sources

arXiv2019

Quantum spin liquids by geometric lattice design

On a lattice composed of triangular plaquettes where antiferromagnetic exchange interactions between localized spins cannot be simultaneously satisfied, the system becomes geometrically frustrated with magnetically disordered phases remarkably different from a simple paramagnet. Spin liquid belongs to one of these exotic states, in which a macroscopic degeneracy of the ground state gives rise to the rich spectrum of collective phenomena. Here, we report on the discovery of a new magnetic state in the heterostructures derived from a single unit cell (111)-oriented spinel CoCr2O4 sandwiched between nonmagnetic Al2O3 spacers. The artificial quasi-two-dimensional material composed of three triangle and one kagome atomic planes shows a degree of magnetic frustration which is almost two orders of magnitude enlarged compared to the bulk crystals. Combined resonant X-ray absorption and torque magnetometry measurements confirm that the designer system exhibits no sign of spin ordering down to 30 mK, implying a possible realization of a quantum spin liquid state in the two dimensional limit.

cond-mat.str-el↗

arXiv2019

Multiferroic metal-PbNb$_{0.12}$Ti$_{0.88}$O$_{3-δ}$ films on Nb-doped STO

Ferroelectricity-the switchable intrinsic electric polarization-has not yet been attained in a metal experimentally and is in fact generally deemed irreconcilable with free carriers, although polar metal has been achieved recently. Multiferroic metal has never even been proposed though multiferroics have been widely investigated. Here we report a room-temperature coexistence of multiferroicity and metallic behavior in PbNb0.12Ti0.88O3-delta films. The oxygen-vacancy-induced electrons become delocalized and ameliorate the ferromagnetic properties of these films, whereas they fail to vanish the polar displacements nor the individual dipole in each unit cell. This concurrent appearance of multiferroicity and metallicity is also confirmed by our first-principles calculation performed on 12.5% Nb-doped PbTiO3 with oxygen vacancies. These findings break a path to multiferroic metallic materials and offer a potential application for multiferroic spintronic devices.

physics.app-ph↗

arXiv2019

Non-Volatile Superconductivity in an Insulating Copper Oxide Induced via Ionic Liquid Gating

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pmδ} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.

cond-mat.supr-con↗

arXiv2019

Magnetoresistance in Metallic Ferroelectrics

Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been attained experimentally in the conducting materials, especially the ones possessing magnetic responses. Here we report the coexistence of ferroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3 (PNTO) thin films. We found that the conducting and magnetic responses of PNTO films are highly asymmetric. Negative MR up to 50% is observed under an in-plane magnetic field; the MR switches to positive with the magnetic field applied parallel to the surface normal. Such unique behavior is attributed to the moving electron caused effective magnetic field which couples with the spins of electrons, which form a dynamic multiferroic state in the metallic PNTO. These findings break a path to multiferroic metal and offer a great potential to the multi-functional devices.

cond-mat.mtrl-sci↗

arXiv2019

Emergent superconductivity in single crystalline $\mathrm{MgTi}_2\mathrm{O}_4$ films via structural engineering

Spinel compounds have demonstrated rich functionalities but rarely shown superconductivity. Here, we report the emergence of superconductivity in the spinel $\mathrm{MgTi}_2\mathrm{O}_4$, known to be an insulator with a complicated order. The superconducting transition is achieved by engineering a superlattice of $\mathrm{MgTi}_2\mathrm{O}_4$ and $\mathrm{SrTiO}_3$. The onset transition temperature in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer can be tuned from 0 to 5 K in such geometry, concurrently with a stretched $c$-axis (from 8.51 to 8.53 Å) compared to the bulk material. Such a positive correlation without saturation suggests ample room for the further enhancement. Intriguingly, the superlattice exhibits isotropic upper critical field $H_{\mathrm{c}2}$ that breaks the Pauli limit, distinct from the highly anisotropic feature of interface superconductivity. The origin of superconductivity in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer is understood in combination with the electron energy loss spectra and the first-principles electronic structure calculations, which point to the birth of superconductivity in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer by preventing the Ti-Ti dimerization. Our discovery not only provides a platform to explore the interplay between the superconductivity and other exotic states, but also opens a new window to realize superconductivity in the spinel compounds as well as other titanium oxides.

cond-mat.supr-con↗

arXiv2019

Anomalous Dome-like Superconductivity in RE2(Cu1-xNix)5As3O2(RE=La, Pr, Nd)

Significant manifestation of interplay of superconductivity and charge density wave, spin density wave or magnetism is dome-like variation in superconducting critical temperature (Tc) for cuprate, iron-based and heavy Fermion superconductors. Overall behavior is that the ordered temperature is gradually suppressed and the Tc is enhanced under external control parameters. Many phenomena like pesudogap, quantum critical point and strange metal emerge in the different doping range. Exploring dome-shaped Tc in new superconductors is of importance to detect emergent effects. Here, we report that the observation of superconductivity in new layered Cu-based compound RE2Cu5As3O2 (RE=La, Pr, Nd), in which the Tc exhibits dome-like variation with maximum Tc of 2.5 K, 1.2 K and 1.0 K as substituting Cu by large amount of Ni ions. The transitions of T* in former two compounds can be suppressed by either Ni doping or rare earth replacement. Simultaneously, the structural parameters like As-As bond length and c/a ratio exhibit unusual variations as Ni-doping level goes through the optimal value. The robustness of superconductivity, up to 60% of Ni doping, reveals the unexpected impurity effect on inducing and enhancing superconductivity in this novel layered materials

cond-mat.supr-con↗

arXiv2019

Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure

The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the Jeff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the X-ray absorption spectroscopy at Ni L2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.

cond-mat.str-el↗

arXiv2019

Real-space observation of charge ordering in epitaxial La2-xSrxCuO4 films

The cuprate superconductors exhibit ubiquitous instabilities toward charge-ordered states. These unusual electronic states break the spatial symmetries of the host crystal, and have been widely appreciated as essential ingredients for constructing a theory for high-temperature superconductivity in cuprates. Here we report real-space imaging of the doping-dependent charge orders in the epitaxial thin films of a canonical cuprate compound La2-xSrxCuO4 using scanning tunneling microscopy. As the films are moderately doped, we observe a crossover from incommensurate to commensurate (4a0, where a0 is the Cu-O-Cu distance) stripes. Furthermore, at lower and higher doping levels, the charge orders occur in the form of distorted Wigner crystal and grid phase of crossed vertical and horizontal stripes. We discuss how the charge orders are stabilized, and their interplay with superconductivity.

cond-mat.supr-con↗

arXiv2019

Disorder induced multifractal superconductivity in monolayer niobium dichalcogenides

The interplay between disorder and superconductivity is a subtle and fascinating phenomenon in quantum many body physics. The conventional superconductors are insensitive to dilute nonmagnetic impurities, known as the Anderson's theorem. Destruction of superconductivity and even superconductor-insulator transitions occur in the regime of strong disorder. Hence disorder-enhanced superconductivity is rare and has only been observed in some alloys or granular states. Because of the entanglement of various effects, the mechanism of enhancement is still under debate. Here we report well-controlled disorder effect in the recently discovered monolayer NbSe$_2$ superconductor. The superconducting transition temperatures of NbSe$_2$ monolayers are substantially increased by disorder. Realistic theoretical modeling shows that the unusual enhancement possibly arises from the multifractality of electron wave functions. This work provides the first experimental evidence of the multifractal superconducting state.

cond-mat.supr-con↗

arXiv2019

Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer on NdGaO$_{3}$(110)

We prepared single unit cell FeSe films on GaO$_{2-δ}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our experimental measurements showed that the single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer are electron doped via interface charge transfer. Most importantly, this type of heterostructure can host interface enhanced superconductivity with an onset temperature of about 28 K, which is much higher than the value of 8 K in bulk FeSe. Our work indicates that FeSe/GaO$_{2-δ}$can be a comparative platform with the FeSe/TiO$_{2-δ}$ family for understanding the mechanism of interface enhanced high temperature superconductivity.

cond-mat.supr-con↗

arXiv2019

Flexible Ultrastrong 100-nm Polyethylene Membranes with Polygonal Pore Structures

Robust nanoporous polymer films with approximate 100-nm thicknesses would be broadly applicable in technological areas such as flexible sensors, artificial skins, separators, antireflection and self-cleaning films. However, the creation of these films has been extremely challenging. To date, all reported ultrathin films are of insufficient mechanical strength for use without substrate supports. We describe here the fabrication of a new ultrastrong and highly flexible ultrahigh molecular weight polyethylene (UHMWPE) 100-nm porous membrane. Scanning and transmission electron microscopy evaluations of film microstructures reveal a planar fibrous structure with randomly oriented polygonal interconnected pores. Moreover, the tensile strength of this film is twice as strong as that of solid stainless steel, with a measured in-plane tensile strength and ductility of approximately 900 MPa and 26%, respectively. We further coated our newly developed film with a monolayer graphene to invent an optically transparent and fully conformable piezoresistive skin sensor and thus demonstrated a potential application.

physics.app-ph↗

arXiv2018

Experimental realization of an intrinsic magnetic topological insulator

Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way.

cond-mat.mtrl-sci↗

arXiv2018

Quantum anomalous Hall multilayers grown by molecular beam epitaxy

Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped (Bi,Sb)$_2$Te$_3$ topological insulator and CdSe normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance $h/Ne$$^2$, where $h$ is the Planck's constant, $e$ is the elementary charge and $N$ is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator.

cond-mat.mtrl-sci↗

arXiv2018

Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of atomically sharp interfaces. Here, by taking the LaCoO3/SrTiO3(111) as a prototype, we show that the reconstruction, which effectively compensates the surface polarity, can stabilize the epitaxy of the heterostructure with polar discontinuity. Reconstructed substrate surface is prepared, while the growth is controlled to form reconstruction on the film surface. To suppress the chemical diffusion across the interface, the growth is interrupted between each unit cell layer to allow the lattice relaxation at a lowered temperature. In this way, high quality two-dimensional growth is realized and the heterointerfaces exhibit sharpness at the atomic scale. Our work provides a path to precisely control the growth of complex oxide heterostructures along polar orientations that exhibit emergent quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2017

Nanoscale Bandgap Tuning across an Inhomogeneous Ferroelectric Interface

We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the photocurrent were explore to illustrate the reversible bandgap variation (~0.3eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandgap variation in ferroelectric perovskite oxides. This reversible bandgap tuning in complex oxides demonstrates a framework for the understanding of the opticallyrelated behaviors (photovoltaic, photoemission, and photocatalyst effects) affected by order parameters such as charge, orbital, and lattice parameters.

cond-mat.mes-hall↗

arXiv2017

The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films

The evolution from superconducting LiTi2O4-delta to insulating Li4Ti5O12 thin films has been studied by precisely adjusting the oxygen pressure during the sample fabrication process. In the superconducting LiTi2O4-delta films, with the increase of oxygen pressure, the oxygen vacancies are filled, and the c-axis lattice constant decreases gradually. With the increase of the oxygen pressure to a certain critical value, the c-axis lattice constant becomes stable, which implies that the Li4Ti5O12 phase comes into being. The process of oxygen filling is manifested by the angular bright-field images of the scanning transmission electron microscopy techniques. The temperature of magnetoresistance changed from positive and negative shows a non-monotonous behavior with the increase of oxygen pressure. The theoretical explanation of the oxygen effects on the structure and superconductivity of LiTi2O4-delta has also been discussed in this work.

cond-mat.supr-con↗

arXiv2017

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron microscopy & electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors.

cond-mat.mtrl-sci↗

arXiv2016

The quadratic covariation for a weighted fractional Brownian motion

Let $B^{a,b}$ be a weighted fractional Brownian motion with indices $a,b$ satisfying $a>-1,-1 0$, we consider the generalized quadratic covariation $\bigl[f(B^{a,b}),B^{a,b}\bigr]^{(a,b)}$ defined by $$ \bigl[f(B^{a,b}),B^{a,b}\bigr]^{(a,b)}_t=\lim_{\varepsilon\downarrow 0}\frac{1+a+b}{\varepsilon^{1+b}}\int_\varepsilon^{t+\varepsilon} \left\{f(B^{a,b}_{s+\varepsilon}) -f(B^{a,b}_s)\right\}(B^{a,b}_{s+\varepsilon}-B^{a,b}_s)s^{b}ds, $$ provided the limit exists uniformly in probability. We construct a Banach space ${\mathscr H}$ of measurable functions such that the generalized quadratic covariation exists in $L^2(Ω)$ and the generalized Bouleau-Yor identity $$ [f(B^{a,b}),B^{a,b}]^{(a,b)}_t=-\frac1{(1+b){\mathbb B}(a+1,b+1)} \int_{\mathbb R}f(x){\mathscr L}^{a,b}(dx,t) $$ holds for all $f\in {\mathscr H}$, where ${\mathscr L}^{a,b}(x,t)=\int_0^tδ(B^{a,b}_s-x)ds^{1+a+b}$ is the weighted local time of $B^{a,b}$ and ${\mathbb B}(\cdot,\cdot)$ is the Beta function.

math.PR↗