arXiv subjects

Robert J. Young

Publications and source records attributed to Robert J. Young.

29 records · Page 2Linked to original sources

arXiv2017

Optical identification using imperfections in 2D materials

The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.

cond-mat.mes-hall↗

arXiv2017

Extracting random numbers from quantum tunnelling through a single diode

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

quant-ph↗

arXiv2016

Photonic crystals to enhance light extraction from 2D materials

We propose a scheme for coupling 2D materials to an engineered cavity based on a defective rod type photonic crystal lattice. We show results from numerical modelling of the suggested cavity design, and propose using the height profile of a 2D material transferred on top of the cavity to maximise coupling between exciton recombination and the cavity mode. The photonic structure plays a key role in enhancing the launch efficiency, by improving the directionality of the emitted light to better couple it into an external optical system. When using the photonic structure, we measured an increase in the extraction ratio by a factor of 3.4. We investigated the variations in the flux spectrum when the radius of the rods is modified, and when the 2D material droops to a range of different heights within the cavity. We found an optimum enhancement when the rods have a radius equal to 0.165 times the lattice constant, this enhancement reduces when the radius is reduced or increased. Finally, we discuss the possible use of solid immersion lenses, in combination with our photonic structure, to further enhance the launch efficiency and to improve vertical confinement of the cavity mode.

quant-ph↗

arXiv2016

Light extraction from 2D materials using liquid formed micro-lenses

The recent discovery of semiconducting two-dimensional materials has led to the prediction of a revolution in the field of optoelectronics, driven by the introduction of a series of new components that are just a few atoms thick. Key remaining challenges for producing practical devices from these materials lie in improving the coupling of light into and out of single atomic layers, and in making these layers robust to the influence of their surrounding environment. We present a solution to tackle both of these problems simultaneously, by deterministically placing a micro-lens directly onto the surface of these materials. These lenses are dynamically tuned to increase the coupling of light, whilst controlling chromatic aberration, before being set in place with UV light. We show that this approach enhances photoluminescence of tungsten diselenide (WSe2) monolayers by up to 300%, and nearly doubles the imaging resolution of the system. Furthermore, this solution fully encapsulates the monolayer, preventing it from physical damage and degradation in air. The optical solution we have developed could become a key enabling technology for the mass production of ultra-thin optical devices, such as quantum light emitting diodes.

physics.optics↗

arXiv2015

The deformation of wrinkled graphene

The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene consists of a hexagonal array of islands of flat monolayer graphene separated by wrinkled material. During deformation, it was found that the rate of shift of the Raman 2D band wavenumber per unit strain was less than 25% of that of flat flakes of mechanically-exfoliated graphene, whereas the rate of band broadening per unit strain was about 75% of that of the exfoliated material. This unusual deformation behavior has been modeled in terms of mechanically-isolated graphene islands separated by the graphene wrinkles, with the strain distribution in each graphene island determined using shear lag analysis. The effect of the size and position of the Raman laser beam spot has also been incorporated in the model. The predictions fit well with the behavior observed experimentally for the Raman band shifts and broadening of the wrinkled CVD graphene. The effect of wrinkles upon the efficiency of graphene to reinforce nanocomposites is also discussed.

cond-mat.mtrl-sci↗

arXiv2011

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27μeV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

cond-mat.mtrl-sci↗

arXiv2010

Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation posi-tion and the dimensions of the confined structures onto the sub-strate. The fundamental steps of substrate patterning and the QD forma-tion mechanism are described together with a discussion of the structural particulars. The post-growth processes, including sur-face etching and substrate removal, which are required to facili-tate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.

physics.optics↗

arXiv2010

Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0, 0.2, 0.4 and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of ~4.25 meV found from a 15nm quantum well. The width of the emission from the 15nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K), electron mobilities up to μ~ 3.5 x 10^4 cm2/Vs with an electron concentration of ~1 x 10^16.

cond-mat.mtrl-sci↗

arXiv2008

Evolution of entanglement within classical light states

We investigate the evolution of quantum correlations over the lifetime of a multi-photon state. Measurements reveal time-dependent oscillations of the entanglement fidelity for photon pairs created by a single semiconductor quantum dot. The oscillations are attributed to the phase acquired in the intermediate, non-degenerate, exciton-photon state and are consistent with simulations. We conclude that emission of photon pairs by a typical quantum dot with finite polarisation splitting is in fact entangled in a time-evolving state, and not classically correlated as previously regarded.

quant-ph↗

arXiv2007

Single electron-spin memory with a semiconductor quantum dot

We show storage of the circular polarisation of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently readout through the electronically-triggered emission of a single photon. The emitted photon shares the same polarisation as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 Tesla, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime.

quant-ph↗

arXiv2006

Improved fidelity of triggered entangled photons from single quantum dots

We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fidelity of the (|HxxHx>+|VxxVx>)/2^0.5 state that we determine is sufficient to satisfy numerous tests for entanglement. The improved quality of entanglement represents a significant step towards the realisation of a practical quantum dot source compatible with applications in quantum information.

quant-ph↗