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S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 523 records · Page 29Linked to original sources
arXiv2002

Ferromagnetism in laser deposited anatase Ti$_{1-x}$Co$_{x}$O$_{2-$δ$}$ films

Pulsed laser deposited films of Co doped anatase TiO2 are examined for Co substitutionality, ferromagnetism, transport, magnetotransport and optical properties. Our results show limited solubility (up to ~ 2 %) of Co in the as-grown films and formation of Co clusters thereafter. For Ti0.93Co0.07O2-d sample, which exhibits a Curie temperature (Tc) over 1180 K, we find the presence of 20-50 nm Co clusters as well as a small concentration of Co incorporated into the remaining matrix. After being subjected to the high temperature anneal during the first magnetization measurement, the very same sample shows a Tc ~ 650 K and almost full matrix incorporation of Co. This Tc is close to that of as-grown Ti0.99Co0.01O2-d sample (~ 700 K). The transport, magnetotransport and optical studies also reveal interesting effects of the matrix incorporation of Co. These results are indicative of an intrinsic Ti1-xCoxO2-d diluted magnetic semiconductor with Tc of about 650-700 K.

cond-mat↗
arXiv2002

Even-Odd Effect in Spontaneously Coherent Bilayer Quantum Hall Droplets

Using exact diagonalization in the disc geometry we predict a novel even-odd effect in the Coulomb blockade spectra of vertically coupled double quantum dots under an external magnetic field. The even-odd effect in the tunneling conductance is a direct manifestation of spontaneous interlayer phase coherence, and is similar to the even-odd resonance in the Cooper pair box problem in mesoscopic superconducting grains. Coherent fluctuations in the number of Cooper pairs in superconductors is analogous to the fluctuations in the relative number difference between the two layers in quantum Hall droplets.

cond-mat.mes-hall↗
arXiv2002

Theory of magnetic bipolar transistors

The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin.

cond-mat↗
arXiv2002

Temperature-dependent magnetization in diluted magnetic semiconductors

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga_{1-x}Mn_xAs with 0.03 < x < 0.07, whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as Ge_{1-x}Mn_x. We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.

cond-mat.mtrl-sci↗
arXiv2002

Overview of Spin-Based Quantum Dot Quantum Computation

Here we give an overview of the research on spin-based quantum dot quantum computation. In particular, we discuss the conditions for the Heisenberg exchange Hamiltonian to be a satisfactory description of two-electron interaction in a GaAs double dot. We also discuss theoretical issues related to spin relaxation, spin encoding, and spin measurement. A brief account is also given to spin-based quantum computation in SiGe quantum dots and donors in Si.

cond-mat.mes-hall↗
arXiv2002

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10} {cm}^{-2}$ to $7.5 \times 10^{10} {cm}^{-2}$, are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This non-monotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

cond-mat.mes-hall↗
arXiv2002

Quantum Hall Stripe Phases at Integer Filling Factors

We consider stripe formation in quantum Hall systems at integer filling factors. We use Hartree-Fock calculations to obtain the phase diagram of bilayer quantum Hall systems at $ν=4n+1$ in a tilted magnetic field. We derive and analyze an effective low energy theory for the stripe phases which may be present in such systems. We discuss the possibility of stripe formation in wide well systems in a tilted magnetic field and suggest that the resistance anisotropy, observed recently by W. Pan et.al. [phys. Rev. B 64 (2001) 121305], may be due to the existence of a skyrmion stripe phase.

cond-mat.mes-hall↗
arXiv2002

Experimental Persistence Probability for Fluctuating Steps

The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step kinetics. If the persistence analysis is carried out in terms of return to a fixed reference position, the measured persistence probability decays exponentially. Numerical studies of the Langevin equation used to model step motion corroborate the experimental observations.

cond-mat.stat-mech↗
arXiv2002

Frictional drag in dilute bilayer 2D hole systems

We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single layer compressibility and the strong dependence of single layer conductivity on density. We also address the effect of hole-phonon interaction on the drag temperature dependence. Our calculated results are in reasonable quantitative agreement with recent experimental observations.

cond-mat.str-el↗
arXiv2002

Magnetoplasmon Excitations and Spin Density Instabilities in an Integer Quantum Hall System with a Tilted Magnetic Field

We study the magnetoplasmon collective mode excitations of integer quantum Hall systems in a parabolically confined quantum well nanostructure in the presence of a tilted magnetic field by using the time-dependent Hartree-Fock approximation. For even integer filling, we find that the dispersion of a spin density mode has a magneto-roton minimum at finite wavevectors, at a few times 10^6 cm^{-1} for parallel fields of order 1-10 Tesla, only in the direction perpendicular to the in-plane magnetic field, while the mode energy increases monotonously with wavevector parallel to the in-plane magnetic field. When the in-plane magnetic field is strong enough (well above 10 Tesla),we speculate that this roton minimum may reach zero energy, suggesting a possible second order phase transition to a state with broken translational and spin symmetries. We discuss the possibility for observing such parallel field-induced quantum phase transitions. We also derive an expression for the dielectric function within the time-dependent Hartree-Fock approximation and include screening effects in our magnetoplasmon calculation. We discuss several exotic symmetry-broken phases that may be stable in finite parallel fields, and propose that the transport anisotropy, observed recently in parallel field experiments, may be due to the formation of a skyrmion stripe phase predicted in our theory. Our predicted anisotropic finite wavevector suppression, perhaps even a mode-softening leading to the quantum phase transition to the anisotropic phase, in the collective spin excitation mode of the wide well system in the direction transverse to the applied parallel magnetic field should be directly experimentally observable via the inelastic light scattering spectroscopy.

cond-mat.mes-hall↗
arXiv2002

Gate errors in solid state quantum computation

We review our work on the interplay between non-resonant gates and solid state environment in various solid state quantum computer architectures and the resulting gate errors. Particular, we show that adiabatic condition can be satisfied in small quantum dots, while higher energy excited states can play important role in the evolution of a Cooper-pair-box based quantum computer model. We also show that complicated bandstructure such as that of Si can pose a severe gate control problem.

cond-mat.mes-hall↗
arXiv2002

Spin-polarized bipolar transport and its applications

In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin-charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel spintronic schemes if nonequilibrium spin is present. Most striking phenomena occur in inhomogeneously doped magnetic {\it p-n} junctions, where the presence of nonequilibrium spin at the depletion layer leads to the spin-voltaic effect: electric current flows without external bias, powered only by spin. The spin-voltaic effect manifests itself in giant magnetoresistance of magnetic {\it p-n} junctions, where the relative change of the magnitude of electric current upon reversing magnetic field can be more than 1000%. The paper reviews nonmagnetic and magnetic spin-polarized {\it p-n} junctions, formulates the essentials of spin-polarized bipolar transport as carrier recombination and spin relaxation limited drift and diffusion, and discusses specific device schemes of spin-polarized solar cells and magnetic diodes.

cond-mat↗
arXiv2002

Spin transport in inhomogeneous magnetic fields: a proposal for Stern-Gerlach-like experiments with conduction electrons

Spin dynamics in spatially inhomogeneous magnetic fields is studied within the framework of Boltzmann theory. Stern-Gerlach-like separation of spin up and spin down electrons occurs in ballistic and diffusive regimes, before spin relaxation sets in. Transient dynamics and spectral response to time-dependent inhomogeneous magnetic fields are investigated, and possible experimental observations of our findings are discussed.

cond-mat↗
arXiv2002

Excitation gaps in fractional quantum Hall states: An exact diagonalization study

We compute energy gaps for spin-polarized fractional quantum Hall states in the lowest Landau level at filling fractions nu=1/3, 2/5,3/7 and 4/9 using exact diagonalization of systems with up to 16 particles and extrapolation to the infinite system-size limit. The gaps calculated for a pure Coulomb interaction and ignoring finite width effects, disorder and LL mixing agree with predictions of composite fermion theory provided the logarithmic corrections to the effective mass are included. This is in contrast with previous estimates, which, as we show, overestimated the gaps at nu=2/5 and 3/7 by around 15%. We also study the reduction of the gaps as a result of the non-zero width of the 2D layer. We show that these effects are accurately accounted for using either Gaussian or z*Gaussian' (zG) trial wavefunctions, which we show are significantly better variational wavefunctions than the Fang-Howard wavefunction. For quantum well parameters typical of heterostructure samples, we find gap reductions of around 20%. The experimental gaps, after accounting heuristically for disorder,are still around 40% smaller than the computed gaps. However, for the case of tetracene layers inmetal-insulator-semiconductor (MIS) devices we find that the measured activation gaps are close to those we compute. We discuss possible reasons why the difference between computed and measured activation gaps is larger in GaAs heterostructures than in MIS devices. Finally, we present new calculations using systems with up to 18 electrons of the gap at nu=5/2 including width corrections.

cond-mat.mes-hall↗
arXiv2002

Theory of spin-polarized bipolar transport in magnetic p-n junctions

The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin up and spin down carriers are constant and carrier recombination and spin relaxation are inhibited. Under the general conditions of an applied bias and externally injected (source) spin, the model formulates analytically carrier and spin transport in magnetic p-n junctions at low bias. The evaluation of the carrier and spin densities at the depletion layer establishes the necessary boundary conditions for solving the diffusive transport equations in the bulk regions separately, thus greatly simplifying the problem. The carrier and spin density and current profiles in the bulk regions are calculated and the I-V characteristics of the junction are obtained. It is demonstrated that spin injection through the depletion layer of a magnetic p-n junction is not possible unless nonequilibrium spin accumulates in the bulk regions--either by external spin injection or by the application of a large bias. Implications of the theory for majority spin injection across the depletion layer, minority spin pumping and spin amplification, giant magnetoresistance, spin-voltaic effect, biasing electrode spin injection, and magnetic drift in the bulk regions are discussed in details, and illustrated using the example of a GaAs based magnetic p-n junction.

cond-mat↗
arXiv2002

Proposal for all-electrical measurement of T_1 in semiconductors

In an inhomogeneously doped magnetic semiconductor spin relaxation time T_1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p-n junction gives rise to the spin-voltaic effect where the nonequilibrium spin-induced charge current is very sensitive to T_1 and can flow even at no applied bias. It is proposed that T_1 can be determined by measuring the I-V characteristics in such a geometry. For a magnetic p-n junction where the results can be calculated analytically, it is in addition possible to extract the g-factor and the degree of injected carrier spin polarization.

cond-mat↗
arXiv2002

Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments.

cond-mat.str-el↗