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S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 541 records · Page 30Linked to original sources
arXiv2002

Layer by layer epitaxy in limited mobility nonequilibrium models of surface growth

We study, using noise reduction techniques, layer by layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular beam epitaxy. Multiple hit noise reduction and long surface diffusion length lead to qualitatively similar layer by layer epitaxy in 1+1 and 2+1 dimensional limited mobility growth simulations. We discuss the dynamic scaling characteristics connecting the transient layer by layer growth regime with the asymptotic kinetically rough growth regime.

cond-mat.stat-mech↗
arXiv2002

Spin-based quantum computation in multielectron quantum dots

In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single spin system unless special conditions are satisfied. Our work compellingly demonstrates that a delicate synergy between theory and experiment (between software and hardware) is essential for constructing a quantum computer.

cond-mat.mes-hall↗
arXiv2002

Gate errors in solid state quantum computer architectures

We theoretically consider possible errors in solid state quantum computation due to the interplay of the complex solid state environment and gate imperfections. In particular, we study two examples of gate operations in the opposite ends of the gate speed spectrum, an adiabatic gate operation in electron-spin-based quantum dot quantum computation and a sudden gate operation in Cooper pair box superconducting quantum computation. We evaluate quantitatively the non-adiabatic operation of a two-qubit gate in a two-electron double quantum dot. We also analyze the non-sudden pulse gate in a Cooper-pair-box-based quantum computer model. In both cases our numerical results show strong influences of the higher excited states of the system on the gate operation, clearly demonstrating the importance of a detailed understanding of the relevant Hilbert space structure on the quantum computer operations.

cond-mat.mes-hall↗
arXiv2002

Exchange in silicon-based quantum computer architecture

The silicon-based quantum computer proposal has been one of the intensely pursued ideas during the past three years. Here we calculate the donor electron exchange in silicon and germanium, and demonstrate an atomic-scale challenge for quantum computing in Si (and Ge), as the six (four) conduction band minima in Si (Ge) lead to inter-valley electronic interferences, generating strong oscillations in the exchange splitting of two-donor two-electron states. Donor positioning with atomic scale precision within the unit cell thus becomes a decisive factor in determining the strength of the exchange coupling--a fundamental ingredient for two-qubit operations in a silicon-based quantum computer.

cond-mat.mes-hall↗
arXiv2002

Optical Conductivity of Ferromagnetic Semiconductors

The dynamical mean field method is used to calculate the frequency and temperature dependent conductivity of dilute magnetic semiconductors. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism.

cond-mat.mtrl-sci↗
arXiv2002

Polaron percolation in diluted magnetic semiconductors

We theoretically study the development of spontaneous magnetization in diluted magnetic semiconductors as arising from a percolation of bound magnetic polarons. Within the framework of a generalized percolation theory we derive analytic expressions for the Curie temperature and the magnetization, obtaining excellent quantitative agreement with Monte Carlo simulation results and good qualitative agreement with experimental results.

cond-mat.mtrl-sci↗
arXiv2001

Strain effects on silicon donor exchange: Quantum computer architecture considerations

Proposed Silicon-based quantum computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing infrastructure of the powerful Si technology. Quantitative understanding of and precise physical control over donor (e.g. Phosphorus) exchange are crucial elements in the physics underlying the proposed Si-based quantum computer hardware. An important potential problem in this context is that inter-valley interference originating from the degeneracy in the Si conduction band edge causes fast oscillations in donor exchange coupling, which imposes significant constraints on the Si quantum computer architecture. In this paper we consider the effect of external strain on Si donor exchange in the context of quantum computer hardware. We study donor electron exchange in uniaxially strained Si, since strain partially lifts the valley degeneracy in the bulk. In particular, we focus on the effects of donor displacements among lattice sites on the exchange coupling, investigating whether inter-valley interference poses less of a problem to exchange coupling of donors in strained Si. We show, using the Kohn-Luttinger envelope function approach, that fast oscillations in exchange coupling indeed disappear for donor pairs that satisfy certain conditions for their relative positions, while in other situations the donor exchange coupling remains oscillatory, with periods close to interatomic spacing. We also comment on the possible role of controlled external strain in the design and fabrication of Si quantum computer architecture.

cond-mat.mes-hall↗
arXiv2001

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.

cond-mat↗
arXiv2001

Decoherence and dephasing in spin-based solid state quantum computers

We discuss the operational definition of decoherence in various solid state systems. In particular, we review, in the context of spin-based solid state quantum computation, the introduction of $T_1$ and $T_2$ to describe decoherence in a two level system. We provide a perspective on recent experiments involving the manipulation of spin coherence in semiconductors, and discuss specific decoherence and dephasing issues in electron spin-based quantum dot quantum computer architectures.

cond-mat.mes-hall↗
arXiv2001

Resonant Raman Scattering by Charge Density and Single Particle Excitations in Semiconductor Nanostructures: A Generalized Interband-Resonant Random-Phase-Approximation Theory

We develop a generic theory for the resonant inelastic light (Raman) scattering by a conduction band quantum plasma taking into account the presence of the filled valence band in doped semiconductor nanostructures within a generalized resonant random phase approximation (RPA). Our generalized RPA theory explicitly incorporates the two-step resonance process where an electron from the filled valence band is first excited by the incident photon into the conduction band before an electron from the conduction band falls back into the valence band emitting the scattered photon. We show that when the incident photon energy is close to a resonance energy, i.e. the valence-to-conduction band gap of the semiconductor structure, the Raman scattering spectral weight at single particle excitation energies may be substantially enhanced even for long wavelength excitations, and may become comparable to the spectral weight of collective charge density excitations (plasmon). Away from resonance, i.e. when the incident photon energy is different from the band gap energy, plasmons dominate the Raman scattering spectrum. We find no qualitative difference in the resonance effects on the Raman scattering spectra among systems of different dimensionalities (one, two and three) within RPA. This is explained by the decoherence effect of the resonant interband transition on the collective motion of conduction band electrons. Our theoretical calculations agree well (qualitatively and semi-quantitatively) with the available experimental results, in contrast to the standard nonresonant RPA theory which predicts vanishing long wavelength Raman spectral weight for single particle excitations.

cond-mat.str-el↗
arXiv2001

The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state

The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electron interactions and disorder in this so-called ``metallic'' regime. For temperatures well below the Fermi temperature, the data obey a scaling law where the disorder parameter ($k_{\rm{F}}l$), and not the concentration, appears explicitly. This suggests that interactions, although present, do not alter the Fermi-liquid properties of the system fundamentally. Furthermore, this experimental observation is reproduced in results of calculations based on temperature-dependent screening, in the context of Drude-Boltzmann theory.

cond-mat.mes-hall↗
arXiv2001

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range.

cond-mat.str-el↗
arXiv2001

Universality Class of Discrete Solid-on-Solid Limited Mobility Nonequilibrium Growth Models for Kinetic Surface Roughening

We investigate, using the noise reduction technique, the asymptotic universality class of the well-studied nonequilibrium limited mobility atomistic solid-on-solid surface growth models introduced by Wolf and Villain (WV) and Das Sarma and Tamborenea (DT) in the context of kinetic surface roughening in ideal molecular beam epitaxy. We find essentially all the earlier conclusions regarding the universality class of DT and WV models to be severely hampered by slow crossover and extremely long lived transient effects. We identify the correct asymptotic universality class(es) which differs from earlier conclusions in several instances.

cond-mat.stat-mech↗
arXiv2001

Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

We formulate a theory of doped magnetic semiconductors such as Ga$_{1-x}$Mn$_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature $T_c$ as a function of magnetic coupling strength $J$ and carrier density $n$. We find that $T_c$ is determined by a subtle interplay between carrier density and magnetic coupling.

cond-mat.str-el↗
arXiv2001

Spin Electronics and Spin Computation

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent proposal of an all-semiconductor spin transistor and a spin battery. We also address some key issues in spin-polarized transport, which are relevant to the feasibility and operation of hybrid semiconductor devices. Finally, we discuss a more radical aspect of spintronic research--the spin-based quantum computation and quantum information processing.

cond-mat↗
arXiv2001

A proposal for a spin-polarized solar battery

A solar cell illuminated by circularly-polarized light generates charge and spin currents. We show that the spin polarization of the current significantly exceeds the spin polarization of the carrier density for the majority carriers. Based on this principle we propose a semiconductor spin-polarized solar battery and substantiate our proposal using analytical arguments and numerical modeling.

cond-mat.mtrl-sci↗
arXiv2001

Effect of an inhomogeneous external magnetic field on a quantum dot quantum computer

We calculate the effect of an inhomogeneous magnetic field, which is invariably present in an experimental environment, on the exchange energy of a double quantum dot artificial molecule, projected to be used as a 2-qubit quantum gate in the proposed quantum dot quantum computer. We use two different theoretical methods to calculate the Hilbert space structure in the presence of the inhomogeneous field: the Heitler-London method which is carried out analytically and the molecular orbital method which is done computationally. Within these approximations we show that the exchange energy J changes slowly when the coupled dots are subject to a magnetic field with a wide range of inhomogeneity, suggesting swap operations can be performed in such an environment as long as quantum error correction is applied to account for the Zeeman term. We also point out the quantum interference nature of this slow variation in exchange.

cond-mat.mes-hall↗