arXiv subjects

S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 559 records · Page 31Linked to original sources

arXiv2001

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.

cond-mat.mtrl-sci↗

arXiv2001

Midgap edge states and pairing symmetry of quasi-one-dimensional organic superconductors

The singlet s-, d- and triplet p-wave pairing symmetries in quasi-one-dimensional organic superconductors can be experimentally discriminated by probing the Andreev bound states at the sample edges. These states have the energy in the middle of the superconducting gap and manifest themselves as a zero-bias peak in tunneling conductance into the corresponding edge. Their existence is related to the sign change of the pairing potential around the Fermi surface. We present an exact self-consistent solution of the edge problem showing the presence of the midgap states for p_x-wave superconductivity. The spins of the edge state respond paramagnetically to a magnetic field parallel to the vector d that characterizes triplet pairing.

cond-mat.supr-con↗

arXiv2001

The Coulomb Luttinger liquid

The effect of long-ranged Coulomb interaction on the low energy properties (momentum distribution function, density of states, electron spectral function, and $4k_F$ correlation function) of one-dimensional electron systems is determined theoretically. Over a wide, physically relevant energy range the behavior is found to be well described by the conventional, short-ranged interacting, Luttinger liquid results, \textit{with a scale-dependent effective exponent}. An accurate empirical formula for the effective exponent is presented.

cond-mat.str-el↗

arXiv2001

Many-body Effects on Excitonic Optical Properties of Photoexcited Semiconductor Quantum Wire Structures

We study carrier interaction induced many-body effects on the excitonic optical properties of highly photoexcited one-dimensional semiconductor quantum wire systems by solving the dynamically screened Bethe-Salpeter equation using realistic Coulomb interaction between carriers. Including dynamical screening effects in the electron/hole self-energy and in the electron-hole interaction vertex function, we find that the excitonic absorption is essentially peaked at a constant energy for a large range of photoexcitation density ($n= 0-6\times 10^5$ cm$^{-1}$), above which the absorption peak disappears without appreciable gain i.e., \textit{no} exciton to free electron-hole plasma Mott transition is observed, in contrast to previous theoretical results but in agreement with recent experimental findings. This absence of gain (or the non-existence of a Mott transition) arises from the strong inelastic scattering by one-dimensional plasmons or charge density excitations, closely related to the non-Fermi liquid nature of one-dimensional systems. Our theoretical work demonstrates a transition or a crossover in one-dimensional photoexcited electron-hole system from an effective Fermi liquid behavior associated with a dilute gas of noninteracting excitons in the low density region ($n<10^5$ cm$^{-1}$) to a non-Fermi liquid in the high density region ($n>10^5$ cm$^{-1}$). The conventional quasi-static approximation for this problem is also carried out to compare with the full dynamical results. Numerical results for exciton binding energy and absorption spectra are given as functions of carrier density and temperature.

cond-mat.str-el↗

arXiv2001

T=0 Phase Diagram of the Double-Exchange Model

We present the T=0 phase diagram of the double-exchange model (ferromagnetic Kondo lattice model) for all values of the carrier concentration $n$ and Hund's couplng $J$, within dynamical mean field theory. We find that depending on the values of $n$ and $J$, the ground state is either a ferromagnet, a commensurate antiferromagnet or some other incommensurate phase with intermediate wave vectors . The antiferromagnetic phase is separated by first order phase boundaries and wide regimes of phase separation. The transition from the ferromagnetic phase to an incommensurate phase is second order.

cond-mat.str-el↗

arXiv2001

Plasmon dispersion in dilute 2D electron systems: Quantum-Classical and Wigner Crystal-Electron Liquid Crossover

We theoretically calculate the finite wave vector plasmon dispersion in a low density 2D electron layer taking into account finite temperature, finite layer width, and local field corrections. We compare our theoretical results with recent Raman scattering spectroscopic experimental 2D plasmon dispersion data in GaAs quantum wells at very low carrier densities ($r_s > 10$) and large wave vectors ($q \ge k_F$). We find good agreement with the experimental data, providing an explanation for why the experimentally measured dispersion seems to obey the simple classical long wavelength 2D plasmon dispersion formula. We also provide a critical discussion on the observable manifestations of the quantum-classical and the Wigner crystal - electron liquid crossover behavior in the 2D plasmon properties as a function of electron density and temperature in GaAs quantum well systems.

cond-mat.str-el↗

arXiv2001

Theoretical issues in spin-based quantum dot quantum computation

We review our recent work addressing various theoretical issues in spin-based quantum dot quantum computation and quantum information processing. In particular, we summarize our calculation of electron exchange interaction in two-electron double quantum dots and multi-electron double dots, and discuss the physical implication of our results. We also discuss possible errors and how they can be corrected in spin-based quantum dot quantum computation. We critically assess the constraints and conditions required for building spin-based solid state quantum dot quantum computers.

cond-mat.mes-hall↗

arXiv2001

Epitaxial mounding in limited mobility models of surface growth

We study, through large scale stochastic simulations using the noise reduction technique, a large number of simple nonequilibrium limited mobility solid-on-solid growth models. We find that d=2+1 dimensional surface growth in several noise reduced models (most notably the Wolf-Villain and the Larger-Curvature model) exhibits spectacular quasi-regular mound formation with slope selection in their dynamical surface morphology. The mounding instability in these epitaxial growth models does not involve the Ehrlich-Schwoebel step edge diffusion barrier. The mounded morphology in these growth models arises from the interplay between the line tension along step edges in the plane parallel to the average surface and the suppression of noise and island nucleation. The line tension tends to stabilize some of the step orientations that coincide with in-plane high symmetry crystalline directions, and thus the mounds that are formed assume quasi-regular structures. The noise reduction technique developed originally for Eden type models can be used to control the stochastic noise and enhance diffusion along the step edge, which ultimately leads to the formation of quasi-regular mounds during growth. We show that by increasing the diffusion surface length together with supression of nucleation and deposition noise, one can obtain a self-organization of the pyramids in quasi-regular patterns.

cond-mat.stat-mech↗

arXiv2001

Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

We calculate the electron-electron interaction induced energy-dependent inelastic carrier relaxation rate in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. In particular, we calculate, using many-body theory, the imaginary part of the full self-energy matrix by expanding in the dynamically RPA screened Coulomb interaction, obtaining the intrasubband and intersubband electron relaxation rates in the ground and excited subbands as a function of electron energy. We separate out the single particle and the collective excitation contributions, and comment on the effects of structural asymmetry in the quantum well on the relaxation rate. Effects of dynamical screening and Fermi statistics are automatically included in our many body formalism rather than being incorporated in an ad-hoc manner as one must do in the Boltzman theory.

cond-mat.str-el↗

arXiv2001

Elementary electronic excitations in one-dimensional continuum and lattice systems

We systematically investigate the mode dispersion and spectral weight of the elementary excitation spectra in one-dimensional continuum and lattice electron systems by using the RPA, the Luttinger liquid model, and the Hubbard model. Both charge and spin excitations are studied in details and compared among the theoretical models. For the lattice Hubbard model we use both Bethe-ansatz equations and Lanczos-Gagliano method to calculate dispersion and spectral weight separately. We discuss the theoretically calculated elementary excitation spectra in terms of the experimental inelastic light (Raman) scattering spectroscopy of 1D semiconductor quantum wire systems. Our results show that in the polarized (i.e. non-spin-flip) Raman scattering spectroscopy, only the 1D charge density excitations should show up with observable spectral weight with the single particle excitations (in RPA) or singlet spin excitations (in the Luttinger model and the Hubbard model) having negligible spectral weight. The depolarized (spin-flip) Raman scattering spectra manifest the spin density or the triplet spin excitations. We also provide a qualitative comparison between the continuum and the lattice 1D elementary excitation spectra.

cond-mat.str-el↗

arXiv2000

Correlation induced phonon softening in low density coupled bilayer systems

We predict a possible phonon softening instability in strongly correlated coupled semiconductor bilayer systems. By studying the plasmon-phonon coupling in coupled bilayer structures, we find that the renormalized acoustic phonon frequency may be softened at a finite wave vector due to many-body local field corrections, particularly in low density systems where correlation effects are strong. We discuss experimental possibilities to search for this predicted phonon softening phenomenon.

cond-mat.str-el↗

arXiv2000

Disorder and Interaction in 2D: Exact diagonalization study of the Anderson-Hubbard-Mott model

We investigate, by numerically calculating the charge stiffness, the effects of random diagonal disorder and electron-electron interaction on the nature of the ground state in the 2D Hubbard model through the finite size exact diagonalization technique. By comparing with the corresponding 1D Hubbard model results and by using heuristic arguments we conclude that it is \QTR{it}{unlikely} that there is a 2D metal-insulator quantum phase transition although the effect of interaction in some range of parameters is to substantially enhance the non-interacting charge stiffness.

cond-mat.str-el↗

arXiv2000

Interplay between Zeeman Coupling and Swap Action in Spin-based Quantum Computer Models: Error Correction in Inhomogeneous Magnetic Fields

We consider theoretically the interplay between Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of inhomogeneous magnetic fields, which are invariably present in real systems. We estimate quantitatively swap errors caused by the inhomogeneous field, establishing that error correction would, in principle, be possible in the presence of non-uniform magnetic fields in realistic structures.

cond-mat.mes-hall↗

arXiv2000

Bilayer Quantum Hall States at $ν=1$ and Coulomb Drag

We consider a number of strongly-correlated quantum Hall states which are likely to be realized in bilayer quantum Hall systems at total Landau level filling fraction ${ν_T}=1$. One state, the $(3,3,-1)$ state, can occur as an instability of a compressible state in the large $d/l_B$ limit, where $d$ and $l_B$ are the interlayer distance and magnetic length, respectively. This state has a hierarchical descendent which is interlayer coherent. Another interlayer coherent state, which is expected in the small $d/l_B$ limit is the well-known Halperin $(1,1,1)$ state. Using the concept of composite fermion pairing, we discuss the wavefunctions which describe these states. We construct a phase diagram using the Chern-Simons Landau-Ginzburg theory and discuss the transitions between the various phases. We propose that the longitudinal and Hall drag resistivities can be used together with interlayer tunneling to experimentally distinguish these different quantum Hall states. Our work indicates the bilayer ${ν_T}=1$ quantum Hall phase diagram to be considerably richer than that assumed so far in the literature.

cond-mat.mes-hall↗

arXiv2000

On the Kinetic Roughening in Polymer Film Growth by Vapor Deposition

This is a Comment on a recent publication: Y.-P. Zhao et al., Phys. Rev. Lett. 85, 3229 (2000). In the Letter, the authors report on an experimental investigation of polymeric (p-xylene) thin film growth and propose a new universality class not previously known. Here, we point out that the critical exponents reported in the Letter are consistent with the critical exponents of Das Sarma-Tamborenea growth model.

cond-mat.stat-mech↗

arXiv2000

Issues, Concepts, and Challenges in Spintronics

We review from a theoretical perspective the emerging field of spintronics where active control of spin transport and dynamics in electronic materials may provide novel device application possibilities. In particular, we discuss the quantum mechanical principles underlying spintronics applications, emphasizing the formidable challenges involving spin decoherence and spin injection facing any eventual device fabrication. We provide a critical assessment of the current status of the field with special attention to possible device applications.

cond-mat↗

arXiv2000

Hilbert space structure of a solid state quantum computer: two-electron states of a double quantum dot artificial molecule

We study theoretically a double quantum dot hydrogen molecule in the GaAs conduction band as the basic elementary gate for a quantum computer with the electron spins in the dots serving as qubits. Such a two-dot system provides the necessary two-qubit entanglement required for quantum computation. We determine the excitation spectrum of two horizontally coupled quantum dots with two confined electrons, and study its dependence on an external magnetic field. In particular, we focus on the splitting of the lowest singlet and triplet states, the double occupation probability of the lowest states, and the relative energy scales of these states. We point out that at zero magnetic field it is difficult to have both a vanishing double occupation probability for a small error rate and a sizable exchange coupling for fast gating. On the other hand, finite magnetic fields may provide finite exchange coupling for quantum computer operations with small errors. We critically discuss the applicability of the envelope function approach in the current scheme and also the merits of various quantum chemical approaches in dealing with few-electron problems in quantum dots, such as the Hartree-Fock self-consistent field method, the molecular orbital method, the Heisenberg model, and the Hubbard model. We also discuss a number of relevant issues in quantum dot quantum computing in the context of our calculations, such as the required design tolerance, spin decoherence, adiabatic transitions, magnetic field control, and error correction.

quant-ph↗

arXiv2000

Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers

We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional system at low carrier densities.

cond-mat.str-el↗