arXiv subjects
Publications and source records attributed to S. Das Sarma.
We present the theoretical basis for analyzing resonant Raman scattering experiments in one-dimensional systems described by the Luttinger liquid fixed point. We make experimentally testable predictions for distinguishing Luttinger liquids from Fermi liquid and argue that presently available quantum wire systems are \textit{not} in the regime where Luttinger liquid effects are important.
We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from inter- and intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily responsible for intersubband (intrasubband) inelastic scattering. We identify the contributions to the inelastic scattering rate coming from the emission of the single-particle and the collective excitations individually. We obtain the lifetime of hot electrons injected in each subband as a function of the total charge density in the wire.
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.
Prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of spintronics: spin coherence, spin entanglement, and spin transport. In particular, we discuss our detailed quantitative theory for spin relaxation and coherence in electronic materials, resolving in the process a long-standing puzzle of why spin relaxation is extremely fast in Al (compared with other simple metals). In the study of spin entanglement, we consider two electrons in a coupled GaAs double-quantum-dot structure and explore the Hilbert space of the double dot. The specific goal is to critically assess the quantitative aspects of the proposed spin-based quantum dot quantum computer architecture. Furthermore, we discuss our theory of spin-polarized transport across a semiconductor-metal interface. In particular, we study Andreev reflection, which enables us to quantify the degree of carrier spin polarization and the strength of interfacial scattering.
We demonstrate, using well-established nonequilibrium limited-mobility solid-on-solid growth models, that mound formation in the dynamical surface growth morphology does not necessarily imply the existence of a surface edge diffusion bias (the Schwoebel barrier). We find mounded morphologies in several nonequilibrium growth models which incorporate no Schwoebel barrier. Our numerical results indicate that mounded morphologies in nonequilibrium surface growth may arise from a number of distinct physical mechanisms, with the Schwoebel instability being one of them.
Selected problems of fundamental importance for spintronics and spin-polarized transport are reviewed, some of them with a special emphasis on their applications in quantum computing and coherent control of quantum dynamics. The role of the solid-state environment in the decoherence of electron spins is discussed. In particular, the limiting effect of the spin-orbit interaction on spin relaxation of conduction electrons is carefully examined in the light of recent theoretical and experimental progress. Most of the proposed spintronic devices involve spin-polarized transport across interfaces in various hybrid structures. The specific example discussed here, of a magnetic semiconductor/superconductor interface, displays many intricacies which a complex spin-dependent interface introduces in the spin-polarized transport. It is proposed that pairs of entangled electrons in a superconductor (Cooper pairs) can be transfered to a non-superconducting region, and consequently separated for a transport study of the spin entanglement. Several important theoretical proposals for quantum computing are based on electronic and nuclear spin entanglement in a solid. Physical requirements for these proposals to be useful are discussed and some alternative views are presented. Finally, a recent discovery of optical control of nuclear spins in semiconductors is reviewed and placed in the context of a long-standing search for electronic control of nuclear dynamics.
We report on resistivity measurements in La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ and Nd$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of quantum phase transition ideas to study the nature of the metal-insulator transition in manganese oxides. Resistivity curves as functions of magnetization for various temperatures show the absence of scaling behavior expected in a continuous quantum phase transition, which leads us to conclude that the observed metal-insulator transition is most likely a finite temperature crossover phenomenon.
We introduce and investigate the stochastic dynamics of the density of local extrema (minima and maxima) of non-equilibrium surface fluctuations. We give a number of exact, analytic results for interface fluctuations described by linear Langevin equations, and for on-lattice, solid-on-solid surface growth models. We show that in spite of the non-universal character of the quantities studied, their behavior against the variation of the microscopic length scales can present generic features, characteristic to the macroscopic observables of the system. The quantities investigated here present us with tools that give an entirely un-orthodox approach to the dynamics of surface morphologies: a statistical analysis from the short wavelength end of the Fourier decomposition spectrum. In addition to surface growth applications, our results can be used to solve the asymptotic scalability problem of massively parallel algorithms for discrete event simulations, which are extensively used in Monte-Carlo type simulations on parallel architectures.
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two dimensionally until they reach a critical size s$_c$, when it is favorable for the islands to become three dimensional. We investigate the mechanism for this transition from two-dimensional(2D) to three-dimensional(3D) growth. Atoms at the edge of 2D islands with the critical size s$_{c}$ become mobile as a result of strain and are promoted to the next level. Edge atoms of the resulting island remain highly strained and are promoted to the higher layers in quick succession. This process of depletion is rapid and occurs at a sharply defined island size. We discuss why this leads to the uniformity seen in self-assembled quantum dots in highly mismatched heteroepitaxy
We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature dependent non-monotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.
We show that spin-polarized electron transmission across semiconductor/superconductor (Sm/S) hybrid structures depends sensitively on the degree of spin polarization as well as the strengths of potential and spin-flip scattering at the interface. We demonstrate that increasing the Fermi velocity mismatch in the Sm and S regions can lead to enhanced junction transparency in the presence of spin polarization. We find that the Andreev reflection amplitude at the superconducting gap energy is a robust measure of the spin polarization magnitude, being independent of the strengths of potential and spin-flip scattering and the Fermi velocity of the superconductor.
We calculate the critical temperature $T_c$ and the superconducting energy gaps $Δ_n$ of a thin film superconductor system, where $Δ_n$ is the superconducting energy gap of the $n$-th subband. Since the quantization of both the electron energy and phonon spectrum arises due to dimensional confinement in one direction, the effective electron-electron interaction mediated by the quantized confined phonons is different from that mediated by the bulk phonon, leading to the modification of $T_c$ in the thin film system. We investigate the dependence of $T_c$ and $Δ_n$ on the film thickness $d$ with this modified interaction.
We present a thorough and quantitative comparison of double-exchange models to experimental data on the colossal magnetoresistance manganese perovskites. Our results settle a controversy by showing that physics beyond double-exchange is important even in La$_{0.7}$Sr$_{0.3}$MnO$_3$, which has been regarded as a conventional double-exchange system. We show that the crucial quantity for comparisons of different calculations to each other and to data is the conduction band kinetic energy $K$, which is insensitive to the details of the band structure and can be experimentally determined from optical conductivity measurements. The seemingly complicated dependence of $T_c$ on the Hund's coupling $J$ and carrier concentration $n$ is shown to reflect the variation of $K$ with $J$, $n$ and temperature. We present results for the optical conductivity which allow interpretation of experiments and show that a feature previously interpreted in terms of the Hund's coupling was misidentified. We also correct minor errors in the phase diagram presented in previous work.
Collective modes of bilayered superconducting superlattices (e.g., YBCO) are investigated within the conserving gauge-invariant ladder diagram approximation including both the nearest interlayer single electron tunneling and the Josephson-type Cooper pair tunneling. By calculating the density-density response function including Coulomb and pairing interactions, we examine the two collective mode branches corresponding to the in-phase and out-of-phase charge fluctuations between the two layers in the unit cell. The out-of-phase collective mode develops a long wavelength plasmon gap whose magnitude depends on the tunneling strength with the mode dispersions being insensitive to the specific tunneling mechanism (i.e., single electron or Josephson). We also show that in the presence of tunneling the oscillator strength of the out-of-phase mode overwhelms that of the in-phase-mode at $k_{\|} = 0$ and finite $k_z$, where $k_z$ and $k_{\|}$ are respectively the mode wave vectors perpendicular and along the layer. We discuss the possible experimental observability of the phase fluctuation modes in the context of our theoretical results for the mode dispersion and spectral weight.
In a bilayer electronic system the layer index may be viewed as the z-component of an isospin-1/2. An XY isospin-ordered ferromagnetic phase was observed in quantum Hall systems and is predicted to exist at zero magnetic field at low density. This phase is a superfluid for opposite currents in the two layers. At B=0 the system is gapless but superfluidity is not destroyed by weak disorder. In the quantum Hall case, weak disorder generates a random gauge field which probably does not destroy superfluidity. Experimental signatures include Coulomb drag and collective mode measurements.
We demonstrate, using well-established nonequilibrium growth models, that mound formation in the dynamical surface growth morphology does not necessarily imply a surface edge diffusion bias (the Schwoebel barrier) as has been almost universally accepted in the literature. We find mounded morphologies in several nonequilibrium growth models which incorporate no Schwoebel barrier. Our work should lead to a critical re-evaluation of recent experimental observations of mounded morphologies which have been theoretically interpreted in terms of Schwoebel barrier effects.
Based on the construction of generalized Halperin wave functions, we predict the possible existence of a large class of broken spin symmetry states in bilayer quantum Hall structures, generalizing the recently suggested canted antiferromgnetic phase to many fractional fillings. We develop the appropriate Chern-Simons theory, and establish explicitly that the low-lying neutral excitation is a Goldstone mode and that the charged excitations are bimerons with continuously tunable (through the canted antiferromagnetic order parameter) electric charge on the individual merons.
We explain quantitatively why resonant Raman scattering spectroscopy, an extensively used experimental tool in studying elementary electronic excitations in doped low dimensional semiconductor nanostructures, always produces an observable peak at the so-called "single particle" excitation although the standard theory predicts that there should be no such single particle peak in the Raman spectra. We have thus resolved an experimental puzzle which dates back more than twenty-five years.