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S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 595 records · Page 33Linked to original sources
arXiv1999

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.

cond-mat.dis-nn↗
arXiv1999

Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition

We consider theoretically the formation and stability of quasi-one dimensional many-body excitons in GaAs quantum wire structures under external photoexcitation conditions by solving the dynamically screened Bethe-Salpeter equation for realistic Coulomb interaction. In agreement with several recent experimental findings the calculated excitonic peak shows very weak carrier density dependence upto (and even above) the Mott transition density, $n_c\sim3\times10^5$ cm$^{-1}$. Above $n_c$ we find considerable optical gain demonstrating compellingly the possibility of one-dimensional quantum wire laser operation.

cond-mat.str-el↗
arXiv1999

Phonon-induced spin relaxation of conduction electrons in aluminum

Spin-flip Eliashberg function $α_S^2F$ and temperature-dependent spin relaxation time $T_1(T)$ are calculated for aluminum using realistic pseudopotentials. The spin-flip electron-phonon coupling constant $λ_S$ is found to be $2.5\times 10^{-5}$. The calculations agree with experiments validating the Elliott-Yafet theory and the spin-hot-spot picture of spin relaxation for polyvalent metals.

cond-mat↗
arXiv1999

A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions

We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also interact strongly with the random positively ionized impurities. At the insulating side the electrons are all bound in pairs to the ions. On the metallic side free electrons exist which are scattered by ions dressed with electron-pairs and therefore alter the bare scattering potential of the ions. The physics at the metallic side of the transition is argued to be controlled by the classical to quantum transport cross-over leading to the observed non-monotonous dependence of the resistivity on temperature. This few electrons per ion scenario appears to be an experimentally realistic and testable scenario, which can also serve as a starting point for further theoretical analysis of the two-dimensional metal-insulator transition.

cond-mat.mes-hall↗
arXiv1999

A Discrete Model for Nonequilibrium Growth Under Surface Diffusion Bias

A limited mobility nonequilibrium solid-on-solid dynamical model for kinetic surface growth is introduced as a simple description for the morphological evolution of a growing interface under random vapor deposition and surface diffusion bias conditions. Simulations using a local coordination dependent instantaneous relaxation of the deposited atoms produce complex surface mound morphologies whose dynamical evolution is inconsistent with all the proposed continuum surface growth equations. For any finite bias, mound coarsening is found to be only an initial transient which vanishes asymptotically, with the asymptotic growth exponent being 0.5 in both 1+1 and 2+1 dimensions. Possible experimental implications of the proposed limited mobility nonequilibrium model for real interface growth under a surface diffusion bias are critically discussed.

cond-mat.stat-mech↗
arXiv1999

Electromodulation of the bilayer $ν$=2 quantum Hall phase diagram

We make a number of precise experimental predictions for observing the various magnetic phases and the quantum phase transitions between them in the $ν$=2 bilayer quantum Ha ll system. In particular, we analyze the effect of an external bias voltage on the quantum phase diagram, finding that a finite bias should readily enable the experimental observation of the recently predicted novel canted antiferromagnetic phase in transport and spin polarization measurements.

cond-mat.mes-hall↗
arXiv1999

Spin relaxation of conduction electrons

Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devoted to the issue of modulating the spin relaxation. It has been shown, for example, that in certain materials doping, alloying, or changing dimensionality can reduce or enhance the spin relaxation by several orders of magnitude. This brief review presents these efforts in the perspective of the current understanding of the spin relaxation of conduction electrons in nonmagnetic semiconductors and metals.

cond-mat↗
arXiv1998

Collective charge density excitations in two-component one-dimensional quantum plasmas: Phase fluctuation mode dispersion and spectral weight in semiconductor quantum wire nanostructures

Collective charge density excitation spectra of both a spatially separated two-component quasi-one dimensional (1D) quantum plasma, as existing in a semiconductor double quantum wire structure, and a 1D homogeneous electron-hole plasma, as appropriate for a photoexcited semiconductor quantum wire system, are calculated within the two-component random-phase-approximation. We also investigate the effect of impurity scattering on the collective mode dispersion and damping, and calculate the collective mode spectral weight by obtaining the dynamical structure factor. We find that both OP and AP modes are overdamped by impurity scattering below some critical wave vector. We find that in the long wavelength limit the spectral weight is carried mostly by the OP, but the spectral weight of the undamped AP mode at finite (but not too large) wave vectors is comparable with that of the OP mode, making it viable to observe the AP mode in semiconductor quantum wire systems. The effect of the interwire electron tunneling in a biwire system on the collective charge density excitation spectra is also studied. We discuss the mode dispersion and damping from an effective Luttinger liquid perspective as well and in some cases include local field corrections in our calculations.

cond-mat.str-el↗
arXiv1998

Band-Structure Effects in the Spin Relaxation of Conduction Electrons

Spin relaxation of conduction electrons in metals is significantly influenced by the Fermi surface topology. Electrons near Brillouin zone boundaries, special symmetry points, or accidental degeneracy lines have spin flip rates much higher than an average electron. A realistic calculation and analytical estimates show that these regions dominate the spin relaxation, explaining why polyvalent metals have much higher spin relaxation rates (up to three orders of magnitude) than similar monovalent metals. This suggests that spin relaxation in metals can be tailored by band-structure modifications like doping, alloying, reducing the dimensionality, etc.

cond-mat↗
arXiv1998

Spin Bose Glass Phase in Bilayer Quantum Hall Systems at $ν=2$

We develop an effective spin theory to describe magnetic properties of the $ν=2$ Quantum Hall bilayer systems. In the absence of disorder this theory gives quantitative agreement with the results of microscopic Hartree-Fock calculations, and for finite disorder it predicts the existence of a novel spin Bose glass phase. The Bose glass is characterized by the presence of domains of canted antiferromagnetic phase with zero average antiferromagnetic order and short range mean antiferromagnetic correlations. It has infinite antiferromagnetic transverse susceptibility, finite longitudinal spin susceptibility and specific heat linear in temperature. Transition from the canted antiferromagnet phase to the spin Bose glass phase is characterized by a universal value of the longitudinal spin conductance.

cond-mat.mes-hall↗
arXiv1998

Sign-time distributions for interface growth

We apply the recently introduced distribution of sign-times (DST) to non-equilibrium interface growth dynamics. We are able to treat within a unified picture the persistence properties of a large class of relaxational and noisy linear growth processes, and prove the existence of a non-trivial scaling relation. A new critical dimension is found, relating to the persistence properties of these systems. We also illustrate, by means of numerical simulations, the different types of DST to be expected in both linear and non-linear growth mechanisms.

cond-mat.stat-mech↗
arXiv1998

Plasmons in coupled bilayer structures

We calculate the collective charge density excitation dispersion and spectral weight in bilayer semiconductor structures {\it including effects of interlayer tunneling}. The out-of-phase plasmon mode (the ``acoustic'' plasmon) develops a long wavelength gap in the presence of tunneling with the gap being proportional to the square root (linear power) of the tunneling amplitude in the weak (strong) tunneling limit. The in-phase plasmon mode is qualitatively unaffected by tunneling. The predicted plasmon gap should be a useful tool for studying many-body effects.

cond-mat.str-el↗
arXiv1998

Spin relaxation of conduction electrons in polyvalent metals: A realistic calculation

Relaxation of electronic spins in metals is significantly enhanced whenever a Fermi surface crosses Brillouin zone boundaries, special symmetry points, or lines of accidental degeneracy. A realistic calculation shows that if aluminum had one valence electron, its spin relaxation would be slower by nearly two orders of magnitude. This not only solves a longstanding experimental puzzle, but also provides a way of tailoring spin dynamics of electrons in a conduction band.

cond-mat↗
arXiv1998

Canted antiferromagnetic and spin singlet quantum Hall states in double-layer systems

We present details of earlier studies (Zheng et al, Phys. Rev. Lett. 78, 310 (1997) and Das Sarma et al, ibid 79, 917 (1997)) and additional new results on double-layer quantum Hall systems at a total filling ν= 2 ν_1, where a single layer at filling ν_1 forms a ferromagnetic, fully spin-polarized, gapped incompressible quantum Hall state. For the case ν_1 = 1, a detailed Hartree-Fock analysis is carried out on a realistic, microscopic Hamiltonian. Apart from the state continuously connected to the ground state of two well separated layers, we find two double-layer quantum Hall phases: one with a finite interlayer antiferromagnetic spin ordering in the plane orthogonal to the applied field (the `canted' state), and the other a spin singlet. The quantum transitions between the various quantum Hall states are continuous, and are signaled by the softening of collective intersubband spin density excitations. For the case of general ν_1, closely related results are obtained by a semi-phenomenological continuum quantum field theory description of the low-lying spin excitations using a non-linear sigma model. Because of its broken symmetry, the canted phase supports a linearly dispersing Goldstone mode and has a finite temperature Kosterlitz-Thouless transition. We present results on the form of the phase diagram, the magnitude of the canted order parameter, the collective excitation dispersions, the specific heat, the form of the dynamic light scattering spectrum at finite temperature, and the Kosterlitz-Thouless critical temperature. Our findings are consistent with recent experimental results.

cond-mat.mes-hall↗
arXiv1998

Noise Reduction and Universality in Limited Mobility Models of Nonequilibrium Growth

We show that a multiple hit noise reduction technique involving the acceptance of only a fraction of the allowed atomistic deposition events could, by significantly suppressing the formation of high steps and deep grooves, greatly facilitate the identification of the universality class of limited mobility discrete solid-on-solid conserved nonequilibrium models of epitaxial growth. In particular, the critical growth exponents of the discrete one dimensional molecular beam epitaxy growth model are definitively determined using the noise reduction technique, and the universality class is established to be that of the nonlinear continuum fourth order conserved epitaxial growth equation.

cond-mat.stat-mech↗
arXiv1998

Extended Self-similarity in Kinetic Surface Roughening

We show from numerical simulations that a limited mobility solid-on-solid model of kinetically rough surface growth exhibits extended self-similarity analogous to that found in fluid turbulence. The range over which scale-independent power-law behavior is observed is significantly enhanced if two correlation functions of different order, such as those representing two different moments of the difference in height between two points, are plotted against each other. This behavior, found in both one and two dimensions, suggests that the `relative' exponents may be more fundamental than the `absolute' ones.

cond-mat.stat-mech↗
arXiv1998

Band gap renormalization in photoexcited semiconductor quantum wire structures in the GW approximation

We investigate the dynamical self-energy corrections of the electron-hole plasma due to electron-electron and electron-phonon interactions at the band edges of a quasi-one dimensional (1D) photoexcited electron-hole plasma. The leading-order $GW$ dynamical screening approximation is used in the calculation by treating electron-electron Coulomb interaction and electron-optical phonon Fröhlich interaction on an equal footing. We calculate the exchange-correlation induced band gap renormalization (BGR) as a function of the electron-hole plasma density and the quantum wire width. The calculated BGR shows good agreement with existing experimental results, and the BGR normalized by the effective quasi-1D excitonic Rydberg exhibits an approximate one-parameter universality.

cond-mat.mes-hall↗