arXiv subjects

S. Mangin

Publications and source records attributed to S. Mangin.

31 records · Page 2Linked to original sources

arXiv2015

Spin transport in molybdenum disulfide multilayer channel

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2015

Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well

Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications.

cond-mat.mes-hall↗

arXiv2014

Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers

In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $Δm_{AFM}$. In the training effect, the $Δm_{AFM}$ changes continuously. This work highlights the fundamental role of the $Δm_{AFM}$ in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2014

Large exchange-dominated domain wall velocities in antiferromagnetically coupled nanowires

Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for new methods of information storage and processing. A major obstacle for their practical use is the domainwall velocity, which is traditionally limited due to the Walker breakdown occurring when the forcing field or current reaches a critical threshold value. We show through numerical and analytical modeling that the Walker breakdown limit can be extended or completely eliminated in antiferromagnetically coupled magnetic nanowires. These coupled nanowires allow for giant domain-wall velocities driven by field and/or current via spin transfer torque as compared to conventional nanowires.

cond-mat.mes-hall↗

arXiv2014

Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.

cond-mat.mtrl-sci↗

arXiv2013

Spin-transfer assisted thermally activated switching distributions in perpendicularly magnetized spin valve nanopillars

We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally-induced switching model breaks down for currents exceeding the critical threshold.

cond-mat.mes-hall↗

arXiv2013

Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer

We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation and annihilation to explain the temperature dependence of the switching fields. Interestingly, low temperature (<30 K) step changes in resistance that we associate with domain nucleation, have a bimodal switching field and resistance step distribution, attributable to two competing nucleation pathways.

cond-mat.mes-hall↗

arXiv2013

Temperature dependence of the switching field distributions in all-perpendicular spin-valve nanopillars

We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and switching variance) from 20 K up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model thats fit the experimental data in which we take a $T^{3/2}$ dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

cond-mat.mes-hall↗

arXiv2012

Time-Resolved Magnetic Relaxation of a Nanomagnet on Subnanosecond Time Scales

We present a two-current-pulse temporal correlation experiment to study the intrinsic subnanosecond nonequilibrium magnetic dynamics of a nanomagnet during and following a pulse excitation. This method is applied to a model spin-transfer system, a spin valve nanopillar with perpendicular magnetic anisotropy. Two-pulses separated by a short delay (< 500 ps) are shown to lead to the same switching probability as a single pulse with a duration that depends on the delay. This demonstrates a remarkable symmetry between magnetic excitation and relaxation and provides a direct measurement of the magnetic relaxation time. The results are consistent with a simple finite temperature Fokker-Planck macrospin model of the dynamics, suggesting more coherent magnetization dynamics in this short time nonequilibrium limit than near equilibrium.

cond-mat.mes-hall↗

arXiv2012

A universal scaling law of exchange bias training effect

Exchange bias training effect in ferromagnetic/antiferromagnetic bilayers is investigated. In some systems the evolution of the exchange bias field $H_E$ with the number of cycle $n$ cannot be fitted by the empirical $1/\sqrt{n}$ function. A unified expression is derived from a discretized Landau-Khalatnikov equation in the framework of the thermodynamics model which is proposed by Ch.\ Binek. This generalized model describes well training effect independent of the magnetization reversal mechanism in the ferromagnetic layers.

cond-mat.mtrl-sci↗

arXiv2010

Spin-transfer pulse switching: From the dynamic to the thermally activated regime

The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short time large pulse amplitude regime, in which the switching probability is determined by the spin angular momentum in the current pulse.

cond-mat.mes-hall↗

arXiv2009

Distortion of the Stoner-Wohlfarth astroid by a spin-polarized current

The Stoner-Wohlfarth astroid is a fundamental object in magnetism. It separates regions of the magnetic field space with two stable magnetization equilibria from those with only one stable equilibrium and it characterizes the magnetization reversal of nano-magnets induced by applied magnetic fields. On the other hand, it was recently demonstrated that transfer of spin angular momentum from a spin-polarized current provides an alternative way of switching the magnetization. Here, we examine the astroid of a nano-magnet with uniaxial magnetic anisotropy under the combined influence of applied fields and spin-transfer torques. We find that spin-transfer is most efficient at modifying the astroid when the external field is applied along the easy-axis of magnetization. On departing from this situation, a threshold current appears below which spin-transfer becomes ineffective yielding a current-induced dip in the astroid along the easy-axis direction. An extension of the Stoner-Wohlfarth model is outlined which accounts for this phenomenon.

cond-mat.other↗

arXiv1999

Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals

The low-doped magnetic perovskite La_{7/8}Sr_{1/8}MnO_3 undergoes within the paramagnetic-semiconducting phase a first-order structural transition due to antiferrodistorsive ordering of Jahn-Teller deformed MnO_6 octahedra. This allows to study not only the influence of the spin configuration on the magneto-transport properties (CMR effect) but also the role of orbital order and disorder. The orbital ordering transition (at 269 K in zero magnetic field) causes a doubling of the resistivity (regardless of the CMR effect in applied magnetic fields) and a drop of the paramagnetic susceptibility. The latter might be interpreted in terms of a shrinking of spin polarons. External magnetic fields shift the ordering transition to lower temperatures according to the field-induced decrease of the carrier localization. The magnetic field - temperature phase boundary line was investigated by means of magnetoresistance (up to 12 T) and pulsed-fields magnetization measurements up to 50 T. The pronounced magnetization anomalies, associated with the phase transition, vanish for fields exceeding 20 T. This behaviour has been attributed to a field-induced crossover from antiferrodistorsive order to a nondistorsive/ferromagnetic orbital configuration.

cond-mat.str-el↗