arXiv subjects

S. Misra

Publications and source records attributed to S. Misra.

13 recordsLinked to original sources

arXiv2025

Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.

physics.app-ph↗

arXiv2019

Chance-Constrained AC Optimal Power Flow -- A Polynomial Chaos Approach

As the share of renewables in the grid increases, the operation of power systems becomes more challenging. The present paper proposes a method to formulate and solve chance-constrained optimal power flow while explicitly considering the full nonlinear AC power flow equations and stochastic uncertainties. We use polynomial chaos expansion to model the effects of arbitrary uncertainties of finite variance, which enables to predict and optimize the system state for a range of operating conditions. We apply chance constraints to limit the probability of violations of inequality constraints. Our method incorporates a more detailed and a more flexible description of both the controllable variables and the resulting system state than previous methods. Two case studies highlight the efficacy of the method, with a focus on satisfaction of the AC power flow equations and on the accurate computation of moments of all random variables.

eess.SY↗

arXiv2017

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation sources. From a thermodynamic standpoint, multilayer growth pits are unexpected in relaxed homoepitaxial growth, whereas oxidation is a known cause for step pinning, roughening, and faceting on elemental surfaces, both with and without growth flux. Not surprisingly, pits are thermodynamically metastable and heal by annealing to recover a smooth periodic step arrangement. STM reveals new details about the pits' atomistic origins and growth dynamics. We give a model for heterogeneous nucleation of pits by preferential adsorption of Å-sized oxide nuclei at intrinsic growth antiphase boundaries, and subsequent step pinning and bunching around the nuclei.

cond-mat.mtrl-sci↗

arXiv2016

AccConF: An Access Control Framework for Leveraging In-Network Cached Data in ICNs

The fast-growing Internet traffic is increasingly becoming content-based and driven by mobile users, with users more interested in data rather than its source. This has precipitated the need for an information-centric Internet architecture. Research in information-centric networks (ICNs) have resulted in novel architectures, e.g., CCN/NDN, DONA, and PSIRP/PURSUIT; all agree on named data based addressing and pervasive caching as integral design components. With network-wide content caching, enforcement of content access control policies become non-trivial. Each caching node in the network needs to enforce access control policies with the help of the content provider. This becomes inefficient and prone to unbounded latencies especially during provider outages. In this paper, we propose an efficient access control framework for ICN, which allows legitimate users to access and use the cached content directly, and does not require verification/authentication by an online provider authentication server or the content serving router. This framework would help reduce the impact of system down-time from server outages and reduce delivery latency by leveraging caching while guaranteeing access only to legitimate users. Experimental/simulation results demonstrate the suitability of this scheme for all users, but particularly for mobile users, especially in terms of the security and latency overheads.

cs.NI↗

arXiv2014

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures.

cond-mat.mtrl-sci↗

arXiv2008

Dynamics of Density Imbalanced Bilayer Holes in the Quantum Hall Regime

We report magnetotransport measurements on bilayer GaAs hole systems with unequal hole concentrations in the two layers. At magnetic fields where one layer is in the integer quantum Hall state and the other has bulk extended states at the Fermi energy, the longitudinal and Hall resistances of the latter are hysteretic, in agreement with previous measurements. For a fixed magnetic field inside this region and at low temperatures ($T\le$ 350 mK), the time evolutions of the longitudinal and Hall resistances show pronounced jumps followed by slow relaxations, with no end to the sequence of jumps. Our measurements demonstrate that the jumps occur simultaneously in pairs of contacts 170 $μ$m apart, and appear to involve changes in the charge configuration of the bilayer. In addition, the jumps can occur with either random or regular periods, excluding thermal fluctuations as a possible origin for the jumps. Finally, while remaining at a fixed field, we warm the sample to above 350 mK, where the jumps disappear. Upon recooling the sample below this temperature, the jumps reappear, indicating that the jumps do not result from nearly dissipationless eddy currents either.

cond-mat.mes-hall↗

arXiv2007

Tunneling between Dilute GaAs Hole Layers

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor $ν_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet.

cond-mat.mes-hall↗

arXiv2007

Ferromagnetism in the Mott insulator Ba2NaOsO6

Results are presented of single crystal structural, thermodynamic, and reflectivity measurements of the double-perovskite Ba2NaOsO6. These characterize the material as a 5d^1 ferromagnetic Mott insulator with an ordered moment of ~0.2 Bohr magnetons per formula unit and TC = 6.8(3) K. The magnetic entropy associated with this phase transition is close to Rln2, indicating that the quartet groundstate anticipated from consideration of the crystal structure is split, consistent with a scenario in which the ferromagnetism is associated with orbital ordering.

cond-mat.str-el↗

arXiv2006

Magnetic phase diagram of Ce2Fe17

Rare-earth-based permanent-magnet materials rich in iron have relatively low ferromagnetic ordering temperatures. This is believed to be due to the presence of antiferromagnetic exchange interactions, besides the ferromagnetic interactions responsible for the magnetic order. The magnetic properties of Ce2Fe17 are anomalous. Instead of ferromagnetic, it is antiferromagnetic, and instead of one ordering temperature, it shows two, at the Neel temperature TN ~ 208 K and at TT ~ 124 K. Ce2Fe17, doped by 0.5% Ta, also shows two ordering temperatures, one to an antiferromagnetic phase, at TN ~ 214 K, and one to a ferromagnetic phase, at T0 ~ 75 K. In order to clarify this behavior, single-crystalline samples were prepared by solution growth, and characterized by electron microscopy, single crystal x-ray diffraction, temperature-dependent specific heat, and magnetic field and temperature-dependent electrical resistivity and magnetization. From these measurements, magnetic H-T phase diagrams were determined for both Ta-doped Ce2Fe17 and undoped Ce2Fe17. These phase diagrams can be very well described in terms of a theory that gives magnetic phase diagrams of systems with competing antiferro- and ferromagnetism.

cond-mat.mtrl-sci↗

arXiv2005

Observation of Quantum Hall Valley Skyrmions

We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor $ν$ = 1. The gap has a finite value even at zero strain and, with strain, rises much faster than expected from a single-particle picture, suggesting that the lowest energy charged excitations at $ν=1$ are "valley Skyrmions".

cond-mat.mes-hall↗

arXiv2004

Failure of Scattering Interference in the Pseudogap State of Cuprate Superconductors

We calculate scattering interference patterns for various electronic states proposed for the pseudogap regime of the cuprate superconductors. The scattering interference models all produce patterns whose wavelength changes as a function of energy, in contradiction to the energy-independent wavelength seen by scanning tunneling microscopy (STM) experiments in the pseudogap state. This suggests that the patterns seen in STM local density of states measurements are not due to scattering interference, but are rather the result of some form of ordering.

cond-mat.supr-con↗

arXiv2002

Atomic Scale Imaging and Spectroscopy of a CuO_2 Plane at the Surface of Bi_2Sr_2CaCu_2O_{8+delta}

We have used a scanning tunneling microscope to demonstrate that a single CuO_2 plane can form a stable and atomically ordered layer at the surface of Bi_2Sr_2CaCu_2O_{8+delta}. In contrast to previous studies on high-T_c surfaces, the CuO_2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO_2 plane's electronic states affects the tunneling process.

cond-mat.supr-con↗

arXiv1998

Evolution of the quasiparticle spectral function in cuprates

We analyzed photoemssion data for several doping levels of the Bi_2Sr_2CaCu_2O_{8+x} compounds, ranging from overdoped to underdoped. We show that the high frequency part of the spectra near (0,π) can be described by Fermi liquid theory in the overdoped regime, but exhibits a non-Fermi liquid behavior in the underdoped regime. We further demonstrate that this novel behavior fits reasonably well to a 1/\sqrtω behavior suggested for systems with strong spin fluctuations.

cond-mat.supr-con↗