arXiv subjects

S. Patnaik

Publications and source records attributed to S. Patnaik.

At least 37 records · Page 2Linked to original sources

arXiv2022

Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2

Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerant ferromagnetism upto 230 K. Here, we study aspects of scattering mechanism in Fe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effect measurements. The quadratic temperature dependence of electrical resistivity below the Curie temperature hints towards the dominance of electron-magnon scattering. A non-saturating positive magnetoresistance (MR) is observed at low temperatures when the magnetic field is applied parallel to the sample plane. The linear negative MR at high fields for T < TC corroborates to the suppression in magnon population due to the damping of spin waves. In the high temperature regime T > TC,MR can be described by the scattering from spin fluctuations using the model described by Khosla and Fischer. Isothermal Hall resistivity curves unveil the presence of anomalous Hall resistivity. Correlation between MR and side jump mechanism further reveals that the electron-magnon scattering is responsible for the side jump contribution to the anomalous Hall effect. Our results provide a clear understanding of the role of electron-magnon scattering on anomalous Hall effect that rules out its origin to be the topological band structure.

cond-mat.str-el↗

arXiv2022

Evidence of Ferromagnetic Clusters and Griffiths Singularity in Magnetic Weyl Semimetal Co$ _{3} $Sn$ _{2} $S$ _{2} $

Cobalt based sulphides of compositional formula Co$ _{3} $A$ _{2} $S$ _{2} $ (A = Sn and In) are endowed with frustrated kagome lattice structure and a plethora of novel phenomena determined from the topological band structure. Here-in, we report on the detailed exploration of anisotropic magnetic properties of single crystals of ferromagnetic compound Co$ _{3} $Sn$ _{2} $S$ _{2} $ under magnetic field $H$ applied along the c-axis $(H\parallel c)$ and the ab-plane $(H\parallel ab)$. A low temperature clustered-glassy magnetic behaviour is revealed in field-cooled and zero field-cooled magnetization and memory effect measurement protocols. The sharp downturn and non-linearity observed in the inverse susceptibility above the critical temperature $T _{\text{C}} $ in the paramagnetic region corroborates to the presence of short-range ferromagnetic clusters above $ T _{\text{C}} $ in Co$ _{3} $Sn$ _{2} $S$ _{2} $. The deviation from linear Curie-Weiss behaviour in the paramagnetic state signifies the strong Griffiths singularity in the material. The slow spin dynamics behaviour and zero spontaneous magnetization above $ T _{\text{C}} $ give an evidence of Griffiths phase owing to the ferromagnetic clusters. The Arrott plots derived from magnetization reveal convex type curvature at low fields and linear positive behavior in the high field region, confirming the second order magnetic phase transition in Co$ _{3} $Sn$ _{2} $S$ _{2} $. The Takahashi spin fluctuation theory analysis provides sufficient evidence for itinerant ferromagnetism in Co$ _{3} $Sn$ _{2} $S$ _{2} $. A large magneto-crystalline anisotropy concomitant with a high anisotropy field suggests the dominance of strong spin orbit coupling phenomenon. Our experimental results emphasize an intuitive understanding of the complex nature of magnetism present in Co-based shandite systems.

cond-mat.str-el↗

arXiv2022

Superconductivity and weak anti-localization in nodal-line semimetal SnTaS_2

Topological semimetals with superconducting properties provide an emergent platform to explore the properties of topological superconductors. We report magnetization, and magneto-transport measurements on high quality single crystals of transition metal dichalcogenide SnTaS2. It is a nodal line semimetal with superconducting transition below Tc = 2.9 K. Moderate anisotropy (3.1) is observed in upper critical fields along H||c and H||ab plane. In the normal state we observe large magneto-resistance and weak anti-localization effect that provide unambiguous confirmation of topological features in SnTaS2. Therefore, genuine topological characteristics can be studied in this material, particularly with regard to microscopic origin of order parameter symmetry.

cond-mat.supr-con↗

arXiv2021

SnAs: a 4K weak type-II superconductor with non-trivial band topology

Superconductors with non-trivial band topology are emerging as one of the best avenues to study quantum anomalies and experimental realization of Majorana Fermions. This article reports the successful crystal growth of superconducting SnAs, which can have topologically non-trivial states, as evidenced in DFT (Density Functional Theory) calculations, Z2 invariants, and topologically surface state. Here, we followed a two-step method to grow SnAs crystal. The powder XRD (X-ray Diffractometry) pattern of synthesized crystal ensures that the crystal is grown in a single phase with a NaCl type cubic structure and the EDAX (Energy Dispersive X-ray Analysis) endorses the stoichiometry of the as-grown sample. The DFT calculations performed with and without the inclusion of spin-orbit coupling (SOC) show band inversion at various K symmetry points near the Fermi level. The recorded Raman spectra show two different modes, which are assigned as A1 and ETO vibrations. The ZFC (Zero-Field Cooled) & FC (Field Cooled), as well as the isothermal M-H (Magnetization vs. field) measurements, are also performed for the topological non-trivial SnAs superconductor, which eventually confirms the weak type-II superconductivity at 4K. Various other superconductivity parameters viz. kappa parameter, coherence length, and penetration depth are also calculated to probe the as-grown sample's characteristics.

cond-mat.supr-con↗

arXiv2021

Control of magnetization dynamics by substrate orientation in YIG thin films

Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi0.1Y2.9Fe5O12, BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 Å to 12.401 Å due to orientation dependent distribution of Bi3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert damping which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert damping are found to be (0.54)*10-4, for YIG (100) and (6.27)*10-4, for Bi-YIG (111) oriented films. Angle variation measurements of the Hr are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4πMeff) and extrinsic linewidth (ΔH0) are observed to be dependent on substrate orientation. Hence PLD growth can assist single-crystalline YIG and BYG films with a perfect interface that can be used for spintronics and related device applications.

cond-mat.mtrl-sci↗

arXiv2021

Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2

Topological materials with extremely large magnetoresistance exhibit a prognostic feature of resistivity turn-on behaviour. This occurs when the temperature dependence of resistivity changes from metallic to semiconducting characteristics on application of external magnetic field above a threshold value. Here, we study the magneto-transport properties of type-II Weyl Semimetal WP2. We find that semi-classical theories of magnetoresistance are consistent with our data without the need to invoke topological surface states. Our findings in this work provides an alternative basis to understand the temperature dependence of magnetoresistance in topological materials.

cond-mat.mtrl-sci↗

arXiv2021

Superconductivity with Topological non-trivial surface states in NbC

Quantum materials with non-trivial band topology and bulk superconductivity are considered superior materials to realize topological superconductivity. In this regard, we report detailed Density Functional Theory (DFT) calculations and Z2 invaraints for the NbC superconductor, exhibiting its band structure to be topologically non-trivial. Bulk superconductivity at 8.9K is confirmed through DC magnetization measurements under Field Cooled (FC) and Zero Field Cooled (ZFC) protocols. This superconductivity is found to be of type-II nature as revealed by isothermal M-H measurements and thus calculated the Ginzberg-Landau parameter. A large intermediate state is evident from the phase diagram, showing NbC to be a strong type-II superconductor. Comparing with earlier reports on superconducting NbC, a non-monotonic relationship of critical temperature with lattice parameters is seen. In conclusion, NbC is a type-II around 10K superconductor with topological non-trivial surface states.

cond-mat.supr-con↗

arXiv2021

Effect of magnetic (Nd) doping on electrical and magnetic properties of topological Sb2Te3 single crystal

Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance values under magnetic field of 5Tesla for Sb2Te3 are 75 percent at 2.5K and 60 percent at 20K, but only 40 percent at 5K for Nd0.1Sb1.9Te3. DC magnetic measurements exhibit expected diamagnetic and paramagnetic behaviors for pure and Nd doped crystals respectively. A cusp-like behavior is observed in magneto conductivity of both pure and Nd doped crystals at low magnetic fields below 1 Tesla which is analyzed using Hikami Larkin Nagaoka (HLN) model. For Sb2Te3 the fitted parameters alpha values are -1.02 and -0.58 and the phase coherence lengths are 50.8(6)nm & 34.9(8)nm at temperatures 2.5K and 20K respectively. For Nd0.1Sb1.9Te3, alpha is -0.29 and coherence length is 27.2(1) nm at 5K. The α values clearly show the presence of weak anti localization effect in both, pure and Nd doped samples. Also with Nd doping, the contribution of bulk states increases in addition to conducting surface states in overall conduction mechanism.

cond-mat.mtrl-sci↗

arXiv2021

Structural and WAL analysis of Topological single-crystal SnSb2Te4

Here, we report successful single crystal growth of SnSb2Te4 using the self-flux method. Unidirectional crystal growth is confirmed through X Ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb2Te4 phase. DC resistivity measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to 5T show a nonsaturating low magneto-resistance percentage. V type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb2Te4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb2Te4 single crystal.

cond-mat.mtrl-sci↗

arXiv2020

High Field Magneto-Transport of Mixed Topological Insulators Bi2Se3-xTex (x = 0, 1, 2 & 3)

The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state reaction route via the self-flux method. These MTI are well characterized through XRD (X-ray Diffraction), SEM (Scanning Electron Microscopy), EDAX (Energy Dispersive spectroscopy), and thereby, the physical properties are analyzed through the RT (Resistance vs temperature) down to 10K as well as the magneto-resistance (MR) measurements (at 5K) in a magnetic field of up to 10 Tesla. The MR drastically varies from x=0 to x=3 in MTI, from a huge 400 percent, it goes down to 20 percent and 5 percent and eventually back to 315 percent. This fascinated behaviour of MR is explained in this article through HLN (Hikami-Larkin-Nagaoka) equation and an additional term. This article not only proposed the mesmerizing behavior of MR in MTI but also explains the reason through competing WAL (Weak Anti-Localization) and WL (Weak Localization) conduction processes.

cond-mat.mtrl-sci↗

arXiv2020

Crystal Growth and characterization of possible New Magnetic Topological Insulators FeBi2Te4

Here we report successful single crystal growth of new possible magnetic topological insulator (MTI) FeBi2Te4 by self-flux method via vacuum encapsulation process. The detailed Rietveld analysis of Powder XRD data shows the as grown MTI crystal to be mainly dominated by FeBi2Te4 phase along with minority phases of Bi2Te3 and FeTe. Scanning electron microscope (SEM) image shows the morphology of as grown MTI single crystal to be of layered type laminar structure. Raman spectroscopy of the crystal exhibited three distinct phonon modes at 65, 110, and 132 cm-1 along with two split secondary modes at 90, and 144cm-1. The secondary split modes are result of FeTe intercalation in Bi2Te3 unit cell. Magneto-resistance measurement has been performed at different temperatures i.e. 200K, 20K and 2K in applied magnetic fields up to 12 Tesla, which showed very low MR in comparison to pure Bi2Te3 crystal. Temperature dependence of DC magnetization measurements show the FeBi2Te4 crystal to be mainly of ferromagnetic (FM) or ferri-magnetic nature above 295 K, albeit a secondary weak magnetic transition is seen at 54-46K as well. Detailed isothermal magnetization (MH) results showed that FM saturation moment at 295K is 0.00213emu/g, which is nearly invariant till 400 K. Summary, we had grown an MTI FeBi2Te4 single crystal, which may be a possible entrant for Quantum Anomalous Hall (QAH) effect at room temperature or above.

cond-mat.mtrl-sci↗

arXiv2019

Magneto-dielectric coupling and non-ergodic electrical behaviour in hexagonal Sr0.6Ba0.4MnO3 via local strain driven magnetic ordering

The crystal structure of hexagonal-Sr0.6Ba0.4MnO3 allows various competing superexchange interactions, leading to intriguing magnetic properties. Local structural changes modify overlapping between Mn and oxygen ions with temperature. Calculations based on our model spin-Hamiltonian reveal that the dominant linear antiferromagnetic superexchange interaction between the oxygen-linked Mn4+ ions results in short range correlations (SRC), manifesting a smooth drop in magnetization below 325K. Dominance of superexchange interaction changes its allegiance towards the non-linear oxygen-linked Mn-O-Mn interactions, onsetting long-range correlations (LRC) below 225K. Below the SRC-LRC crossover temperature, electrical response arising from the interacting dipoles exhibits power-law divergent behaviour of relaxation time, upon cooling. Non-ergodic character of the dipole-cluster glass state is examined via the indispensable aging and rejuvenation effects, similar to the spin glasses. Competitive-frustration among spin-exchange and local-strain is reckoned as responsible for the electrical glass origin.

cond-mat.mtrl-sci↗

arXiv2019

Hikami-Larkin-Nagaoka (HLN) Fitting of Magneto Transport of Bi2Se3 Single Crystal in Different Magnetic Field Ranges

We report the detailed study of structural micro-structuraland high magnetic field magneto transport propertiesof Bi2Se3single crystal. Bi2Se3 single crystal is grown through conventional solid-state reaction route via the self-flux method. Rietveld analysis on Powder X-ray Diffraction showed that the studied Bi2Se3 crystal is crystallized in single-phase without any impurity. The surface morphology analyzed through Scanning Electron Microscopy study which shows that as-grown single crystal exhibit layered type structure and the quantitative weight of the atomic constituents (Bi and Se) are found to be closeto the stoichiometric amount in energy-dispersive X-ray spectroscopy analysis. Low temperature (2.5K) magneto-resistance (MR) exhibited a v-type cusp around origin at lower magnetic field, which is the sign of weak anti-localization effect. Further, Bi2Se3 single crystal magneto conductivity data is fitted by well-known HLN equation in different magnetic field range of 2Tesla, 4Tesla and 6Tesla and the resultant found that the conduction mechanism of Bi2Se3 is dominated by WAL state.

cond-mat.mtrl-sci↗

arXiv2019

Crystal Growth and basic transport and magnetic properties of MnBi2Te4

We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. The heating schedule basically deals with growth of the crystal from melt at 900C and very slow cooling (1C/hr) to around 600C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated mainly by MnBi2Te4 and minor phases of Bi2Te3 and MnTe. The transport measurements showed a step like behavior at around 150K followed by cusp like structure in resistivity at around 25K (TP) due reported anti-ferromagnetic ordering of Mn. Both the resistivity transitions are seen clearly in dR/dT measurements at 150K and 20K respectively. The 25K transition of the compound is also seen in magnetic susceptibility. Low temperature (5K) magnetoresistance (MR) in applied field of up to 6 Tesla exhibited negative ve MR below 3 Tesla and +ve for higher fields. Also, seen are steps in MR below one Tesla. The studied MnBi2Te4 MTI crystal could be a possible candidate for Quantum Anomalous Hall (QAH) effect.

cond-mat.mtrl-sci↗

arXiv2018

Growth, Characterization and High Field Magneto-Conductivity of Co0.1Bi2Se3 Topological Insulator

We report the crystal growth as well as transport properties of Co added Bi2Se3 single crystals. The values of the lattice parameters a and b for Co added sample were observed to increase as compared to the pure Bi2Se3. The Raman spectroscopy displayed higher Raman shift of corresponding vibrational modes for Co0.1Bi2Se3, and the resistivity curves with and without applied magnetic field shows a metallic behaviour. Both the crystals were subjected to magneto-resistance (MR) measurements under applied fields of 14Tesla. The value of MR is found to decrease from about 380 (5K, 14 Tesla) for Bi2Se3 to 200 degree for Co0.1Bi2Se3. To elaborate the transport properties of pure and Co added Bi2Se3 crystals, the magneto-conductivity is fitted to the HLN (Hikami Larkin Nagaoka) equation and it is found that the charge conduction is mainly dominated by surface driven WAL (weak anti-localization) with negligible bulk WL (weak localization) contribution in both crystals alike. The MH curves of Co0.1Bi2Se3 crystal at different temperatures displayed a combination of both ferromagnetic and diamagnetic behaviour. On the other hand, the Electron Paramagnetic Resonance (EPR) revealed that pure Bi2Se3 is diamagnetic whereas, Co orders ferro-magnetically with resonating field around 3422Oe at room temperature.

cond-mat.mtrl-sci↗

arXiv2018

Novel Superconductivity in Endohedral Gallide Mo8Ga41

We report on synthesis and characterization of gallide cluster based Mo8Ga41 superconductor. Transport and magnetization measurements confirm the superconducting transition temperature to be 9.8 K. The upper critical field, lower critical field, Ginzburg-Landau coherence length and penetration depth are estimated to be 11.8T, 150G, 5.2nm, 148nm respectively. The electronic band structure, density of states and phonon dispersion curve calculations are obtained by using Density Functional Theory. The core level X-ray Photoelectron Spectroscopy (XPS) reveals the binding energy information of the constituting elements Mo and Ga in Mo8Ga41. The valence band spectra from XPS is in good agreement with calculated density of states (DOS). The zero field critical current density (Jc) at T = 2 K is ~ 3*10^5 A/cm^2 which is indicative of efficient flux pinning in the as grown compound. About two fold enhancement in critical current density with application of external pressure (1.1 GPa) is observed with marginal decrease in transition temperature. The fitting of current density to double exponential model confirms possibility of two gap superconductivity in Mo8Ga41.

cond-mat.supr-con↗

arXiv2018

High Field Magneto-Conductivity Analysis of Bi2Se3 Single Crystal

We report the high field (up to 14Tesla) magneto-conductivity analysis of Bi2Se3 topological insulator grown via the self flux method. The detailed experimental investigations including crystal growth as well as the electrical, thermal and spectroscopic characterizations of the resultant Bi2Se3 single crystal are already reported by some of us. The current letter deals with high field magneto-conductivity analysis in terms of Hikami Larkin Nagaoka (HLN) model, which revealed that the electronic conduction is dominated by both surface states driven weak anti localization (WAL), as well the bulk WL (weak localization) states. Further, by applying the HLN equation we have extracted the fitting parameters i.e., phase coherence length and the pre-factor. The HLN equation exhibited values of [pre factor close to -1.0, indicating both WAL and WL contributions. On the other hand, the extracted phase coherence length is seen to decrease from 11.125 nm to 5.576 nm as the temperature is increased from 5K to 200K respectively. Summarily, the short letter discusses primarily the temperature dependent magneto-conductivity analysis of pristine Bi2Se3 single crystal by the HLN model.

cond-mat.mtrl-sci↗

arXiv2018

Hikami-Larkin-Nagaoka (HLN) treatment of the Magneto Conductivity of Bi2Te3 Topological Insulator

We report the magneto-conductivity analysis at different temperatures under magnetic field of up to 5Tesla of a well characterized Bi2Te3 crystal. Details of crystal growth and various physical properties including high linear magneto resistance are already reported by some of us. To elaborate upon the transport properties of Bi2Te3 crystal, the magneto conductivity is fitted to the known HLN (Hikami Larkin Nagaoka) equation and it is found that the conduction mechanism is dominated by both surface driven WAL (weak anti localization) and the bulk WL states. The value of HLN equation coefficient signifying the type of localization (WL, WAL or both WL and WAL) falls within the range of -0.5 to -1.5. In our case, the low field (0.25Tesla) fitting of studied crystal exhibited value close to -0.86 for studied temperatures of up to 50K, indicating both WAL and WL contributions. The phase coherence length is found to decrease from 98.266 to 40.314nm with increasing temperature. Summarily, the short letter reports the fact that bulk Bi2Te3 follows the HLN equation and quantitative analysis of the same facilitates to know the quality of studied crystal in terms of WAL to WL contributions and thus the surface to bulk conduction ratio.

cond-mat.mtrl-sci↗