arXiv subjects

S. Tarucha

Publications and source records attributed to S. Tarucha.

At least 37 records · Page 2Linked to original sources

arXiv2017

Gate tunable parallel double quantum dot in InAs double-nanowire junctions

We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each NW, with a finite electrostatic coupling between each other. With the fabrication technique established in this study, devices proposed for more advanced experiments, such as Cooper-pair splitting and the observation of parafermions, can be realized.

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arXiv2016

Ballistic graphene Josephson junctions from the short to the long regime

We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $δE$ (or $Δ$) and the number of the junction's transversal modes.

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arXiv2016

Low-temperature behavior of transmission phase shift across a Kondo correlated quantum dot

We study the transmission phase shift across a Kondo correlated quantum dot in a GaAs heterostructure at temperatures below the Kondo temperature ($T < T_{\rm K}$), where the phase shift is expected to show a plateau at $π/2$ for an ideal Kondo singlet ground state. Our device is tuned such that the ratio $Γ/U$ of level width $Γ$ to charging energy $U$ is quite large ($\lesssim 0.5$ rather than $\ll 1$). This situation is commonly used in GaAs quantum dots to ensure Kondo temperatures large enough ($\simeq 100$ mK here) to be experimentally accessible; however it also implies that charge fluctuations are more pronounced than typically assumed in theoretical studies focusing on the regime $Γ/U \ll 1$ needed to ensure a well-defined local moment. Our measured phase evolves monotonically by $π$ across the two Coulomb peaks, but without being locked at $π/2$ in the Kondo valley for $T \ll T_{\rm K}$, due to a significant influence of large $Γ/U$. Only when $Γ/U$ is reduced sufficiently does the phase start to be locked around $π/2$ and develops into a plateau at $π/2$. Our observations are consistent with numerical renormalization group calculations, and can be understood as a direct consequence of the Friedel sum rule that relates the transmission phase shift to the local occupancy of the dot, and thermal average of a transmission coefficient through a resonance level near the Fermi energy.

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arXiv2016

Footprints of hyperfine, spin-orbit, and decoherence effects in Pauli spin blockade

We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the blockade efficiency. We find pronounced changes in the behavior of eta upon increasing the magnetic field, with eta increasing, saturating and increasing again. We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.

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arXiv2016

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities.

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arXiv2016

Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise

We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.

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arXiv2015

Measurement of the Transmission Phase of an Electron in a Quantum Two-Path Interferometer

A quantum two-path interferometer allows for direct measurement of the transmission phase shift of an electron, providing useful information on coherent scattering problems. In mesoscopic systems, however, the two-path interference is easily smeared by contributions from other paths, and this makes it difficult to observe the \textit{true} transmission phase shift. To eliminate this problem, multi-terminal Aharonov-Bohm (AB) interferometers have been used to derive the phase shift by assuming that the relative phase shift of the electrons between the two paths is simply obtained when a smooth shift of the AB oscillations is observed. Nevertheless the phase shifts using such a criterion have sometimes been inconsistent with theory. On the other hand, we have used an AB ring contacted to tunnel-coupled wires and acquired the phase shift consistent with theory when the two output currents through the coupled wires oscillate with well-defined anti-phase. Here, we investigate thoroughly these two criteria used to ensure a reliable phase measurement, the anti-phase relation of the two output currents and the smooth phase shift in the AB oscillation. We confirm that the well-defined anti-phase relation ensures a correct phase measurement with a quantum two-path interference. In contrast we find that even in a situation where the anti-phase relation is less well-defined, the smooth phase shift in the AB oscillation can still occur but does not give the correct transmission phase due to contributions from multiple paths. This indicates that the phase relation of the two output currents in our interferometer gives a good criterion for the measurement of the \textit{true} transmission phase while the smooth phase shift in the AB oscillation itself does not.

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arXiv2015

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter

We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD output channels, unlike previous designs where a conventional superconductor was used with tunnel barriers to the quantum dots (QD) of a different material. Superconductivity in graphene is induced via the proximity effect, thus resulting in both a large measured superconducting gap $Δ=0.5$meV, and a long coherence length $ξ=200$nm. The graphene-graphene, flat, two dimensional, superconductor-QD interface lowers the capacitance of the quantum dots, thus increasing the charging energy $E_C$ (in contrast to previous devices). As a result we measure a visibility of up to 96% and a splitting efficiency of up to 62%. Finally, the devices utilize graphene grown by chemical vapor deposition allowing for a standardized device design with potential for increased complexity.

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arXiv2014

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.

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arXiv2014

Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins

We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition, we establish fast z-rotations up to 54 MHz by directly controlling the spin phase. Our findings will significantly facilitate tomography and error correction with electron spins in quantum dots.

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arXiv2014

Transmission Phase in the Kondo Regime Revealed in a Two-Path Interferometer

We report on the direct observation of the transmission phase shift through a Kondo correlated quantum dot by employing a new type of two-path interferometer. We observed a clear $π/2$-phase shift, which persists up to the Kondo temperature $T_{\rm K}$. Above this temperature, the phase shifts by more than $π/2$ at each Coulomb peak, approaching the behavior observed for the standard Coulomb blockade regime. These observations are in remarkable agreement with 2-level numerical renormalization group calculations. The unique combination of experimental and theoretical results presented here fully elucidates the phase evolution in the Kondo regime.

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arXiv2014

Full control of quadruple quantum dot circuit charge states in the single electron regime

We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model.

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arXiv2014

Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots

We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states.

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arXiv2013

Aharonov-Bohm interferometry with a tunnel-coupled wire

Recent experiments [M. Yamamoto et al., Nature Nanotechnology 7, 247 (2012)] used the transport of electrons through an Aharonov-Bohm interferometer and two coupled channels (at both ends of the interferometer) to demonstrate a manipulable flying qubit. Results included in-phase and anti-phase Aharonov-Bohm (AB) oscillations of the two outgoing currents as a function of the magnetic flux, for strong and weak inter-channel coupling, respectively. Here we present new experimental results for a three terminal interferometer, with a tunnel coupling between the two outgoing wires. We show that in some limits, this system is an even simpler realization of the "two-slit" experiment. We also present a simple tight- binding theoretical model which imitates the experimental setup. For weak inter-channel coupling, the AB oscillations in the current which is reflected from the device are very small, and therefore the oscillations in the two outgoing currents must cancel each other, yielding the anti-phase behavior, independent of the length of the coupling regime. For strong inter-channel coupling, whose range depends on the asymmetry between the channels, and for a relatively long coupling distance, all except two of the waves in the coupled channels become evanescent. For the remaining running waves one has a very weak dependence of the ratio between the currents in the two channels on the magnetic flux, implying that these currents are in phase with each other.

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arXiv2013

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.

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arXiv2013

Excitation spectroscopy of few-electron states in artificial diatomic molecules

We study the excitation spectroscopy of few-electron, parallel coupled double quantum dots (QDs). By applying a finite source drain voltage to a double QD (DQD), the first excited states observed in nonequilibrium charging diagrams can be classified into two kinds in terms of the total effective electron number in the DQD, assuming a core filling. When there are an odd (even) number of electrons, one (two)-electron antibonding (triplet) state is observed as the first excited state. On the other hand, at a larger source drain voltage we observe higher excited states, where additional single-particle excited levels are involved. Eventually, we identify the excited states with a calculation using the Hubbard model and, in particular, we elucidate the quadruplet state, which is normally forbidden by the spin blockade caused by the selection rule.

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arXiv2013

Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots

We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.

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arXiv2013

Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots

Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential.

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