arXiv subjects

Sascha R. Valentin

Publications and source records attributed to Sascha R. Valentin.

23 records · Page 2Linked to original sources

arXiv2017

A single eletron-photon pair generation from a single polarization-entangled photon pair

We demonstrate paired generation of a single photo-electron in a quantum dot and a single photon from a single polarization-entangled photon pair that is generated by spontaneous parametric down conversion. The electron is reated in a GaAs quantum dot via inter-band resonantexcitation by irradiating one of the paired photons on the dot, while the remaining photon is detected by a single photon counter. Because the paired photons are generated simultaneously, the photo-electron and the remaining photon should be observed as a coincident event if the traveling distance is equivalent between them. The coincidence is probabilistic due to the probabilistic generation of the paired photon. We observe the probability of finding the photon with the photo-electron detection substantially higher then that without the photo-electron detection and derive the coincident rate comparable to the emission rate of the original photon pairs.

cond-mat.mes-hall↗

arXiv2017

Optical nanoscopy via quantum control

We present a scheme for nanoscopic imaging of a quantum mechanical two-level system using an optical probe in the far-field. Existing super-resolution schemes require more than two-levels and depend on an incoherent response to the lasers. Here, quantum control of the two states proceeds via rapid adiabatic passage. We implement this scheme on an array of semiconductor self-assembled quantum dots. Each quantum dot results in a bright spot in the image with extents down to 30 nm (λ/31). Rapid adiabatic passage is established as a versatile tool in the super-resolution toolbox.

cond-mat.mes-hall↗

arXiv2015

Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning

The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gates. An asymmetric triangular potential in the heterostructure enables ultrawide electrical tuning of ISR which is an order of magnitude higher as compared to the equivalent square well. For a single triangular well, we achieve a coupling strength of 0.52 THz, with a normalized coupling ratio of 0.26.

cond-mat.mes-hall↗

arXiv2015

Single photoelectron spin detection and angular momentum transfer in a gate defined quantum dot

Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interface. The interface would enlarge the concept of quantum information technology, in which single photogenerated electron spins are manipulated with the dots, but this remains a serious challenge. Here, we report the detection of single electron spins generated by polarized single photons via a double QD (DQD) to verify the angular momentum transfer from single photons to single electrons. Pauli spin blockade (PSB) is used to project the photoelectron spin state onto the up or down spin state. Our result promises the realization of coherent quantum state transfer and development of hybrid photon and spin quantum technology.

cond-mat.mes-hall↗

arXiv2014

Infrared transmission spectroscopy of charge carriers in self-assembled InAs quantum dots under surface electric fields

We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epitaxy to voltage-tune the device, while a two dimensional electron gas (2DEG) serves as back contact. Spacings of the hole sublevels are indirectly calculated using the photoluminescence spectroscopy along with FTIR spectroscopy. The observed spacings fit well to the calculated values for both electrons and holes. Additionally, the intersubband resonances of the 2DEG are enhanced due to the QD layer on top of the device.

cond-mat.mes-hall↗