arXiv subjects

Shota Kita

Publications and source records attributed to Shota Kita.

5 recordsLinked to original sources

arXiv2026

Silicon photonic optical-electrical-optical converters based on load-resistor and current-injection operation

Optical-electrical-optical (OEO) converters are key primitives for low-latency, energy-efficient photonic computing because they enable nonlinear activation and optical signal regeneration on chip. We report two monolithically integrated silicon-photonic OEO converters-load-resistor (high-speed variant) and current-injection (high-gain variant) types-fabricated at a silicon photonics foundry. Each device combines a germanium photodetector with a micro-ring modulator (MRM). The converters exhibit reconfigurable nonlinear transfer functions and measurable on-chip RF OEO gain. The RF OEO gain scales linearly with the MRM bias power, with slopes of 0.10 mW^-1 (load-resistor of 10 kΩ) and 1.4 mW^-1 (current-injection), enabling a gain > 1 region at practical bias powers (~10 mW and ~1 mW, respectively). Eye diagrams confirm clear openings up to 4 Gb/s for a high-speed load-resistor variant with a 500-Ω load. To the best of our knowledge, this is the first experimental demonstration of a monolithically integrated, foundry-fabricated silicon-photonic load-resistor type OEO converter exhibiting reconfigurable nonlinear transfer and on-chip RF OEO gain. In the carrier-injection device, the activation slope exceeds unity, yielding 3.9 dB extinction-ratio regeneration. Short-pulse measurements yield 3-dB bandwidths of 1.49 GHz, 160 MHz (load-resistor of 500 Ω and 10 kΩ), and 76 MHz (current-injection), consistent with the RF data. Energy analysis shows an energy-bandwidth trade-off (RC-limited for load-resistor vs. lifetime-limited for injection) and outline routes to sub-pJ/bit operation via reduced capacitance and improved EO efficiency. These results establish silicon-photonic OEO converters as compact, foundry-compatible building blocks for scalable optoelectronic computing and optical neural networks.

physics.optics↗

arXiv2024

Optoelectronic recurrent neural network using optical-electrical-optical converters with RC delay

Optical neural network (ONN) has been attracting intense attention owing to their low latency and low-power consumption. Among the ONNs, optical recurrent neural network (RNN) enables low-power and high-speed time-series data processing using a compact loop structure. The loop losses need to be efficiently compensated so that the time-series information is maintained in the RNN operation. For this purpose, we focus on the optoelectronic RNN (OE-RNN) with optical-electrical-optical (OEO) converters to compensate for the loop losses. However, the effect of resistive-capacitive (RC) delay of OEO converters on the RNN performance is unclear. Here, we study in simulation an OE-RNN equipped with OEO converters with RC delay. We confirm that our modeled OE-RNN achieves the high training accuracy of time-series data classification even when RC delay is comparably large to the time interval of time-series data. Our analyses reveal that the accumulation of time-series data by RC delay does not degrade the RNN performance but rather can compensate for the degraded RNN performance due to loop losses. From the theoretical analysis referring to the gradient explosion and vanishing problems, we find the region related to loss and RC delay where the high training accuracy can be achieved. In simulation, we confirm this compensation effect in the large OE-RNN circuit up to 32$\times$32 scale. Our proposed scheme opens a new way of time-series data processing by utilizing RC delay for the optical computing and optical communication.

physics.optics↗

arXiv2020

Observing exceptional point degeneracy of radiation with electrically pumped photonic crystal coupled-nanocavity lasers

Controlling gain and loss of coupled optical cavities can induce non-Hermitian degeneracies of eigenstates, called exceptional points (EPs). Various unconventional phenomena around EPs have been reported, and expected to incorporate extra functionalities into photonic devices. The eigenmode exactly under the EP degeneracy is also predicted to exhibit enhanced radiation. However, such responses have yet to be observed in on-chip lasers, because of both the limited controllability of their gain and loss and the lifting of degeneracy by pump-induced cavity detuning. Here, we report the first non-Hermitian nanophotonic platform based on two electrically pumped photonic crystal lasers and its spontaneous emission at an EP degeneracy. Systematically tuned and independent current injection to our wavelength-scale active heterostructure cavities enables us to demonstrate the clear EP phase transition of their spontaneous emission, accompanied with the spectral coalescence of coupled modes and reversed pump dependence of the intensity. Furthermore, we find experimentally and confirm theoretically the peculiar squared Lorentzian emission spectrum very near the exact EP, which indicates the four-fold enhancement of the photonic local density of states induced purely by the degeneracy. Our results open a new pathway to engineer the light-matter interaction by non-Hermiticity and explore larger reconfigurable laser arrays for further non-Hermitian features and physics.

physics.optics↗

arXiv2016

Monolithic CMOS-compatible zero-index metamaterials

Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design is achieved through a Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.

physics.optics↗

arXiv2016

On-chip all-dielectric fabrication-tolerant zero-index metamaterials

Zero-index metamaterials (ZIMs) offer unprecedented ways to manipulate the flow of light, and are of interest for wide range of applications including optical cloaking, super-coupling, and unconventional phase-matching properties in nonlinear optics. Impedance-matched ZIMs can be obtained through a photonic Dirac-cone (PDC) dispersion induced by an accidental degeneracy of two linear bands - typically an electric monopole mode and a transverse magnetic dipole mode - at the center of the Brillouin zone. Consequently, PDC can only be achieved for a particular combination of geometric parameters of the metamaterial, and hence is sensitive to fabrication imperfections. These fabrication imperfections may limit the usefulness in practical applications. In this work we overcome this obstacle and demonstrate robust all-dielectric (AD) ZIM that supports PDC dispersion over wide parameter space. Our structure, consisting of an array of Si pillars on silica substrate, is fabricated in silicon-oninsulator (SOI) platform and operates at telecom wavelengths.

physics.optics↗