arXiv subjects

Shou-Cheng Zhang

Publications and source records attributed to Shou-Cheng Zhang.

At least 55 records · Page 3Linked to original sources

arXiv2015

Metal-to-Insulator Switching in Quantum Anomalous Hall States

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the 6 quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is realized through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. In addition, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

cond-mat.mes-hall↗

arXiv2015

The quantum anomalous Hall effect

The quantum anomalous Hall effect is defined as a quantized Hall effect realized in a system without external magnetic field. Quantum anomalous Hall effect is a novel manifestation of topological structure in many-electron systems, and may have potential applications in future electronic devices. In recent years, quantum anomalous Hall effect has been proposed theoretically and realized experimentally. In this review article, we provide a systematic overview of the theoretical and experimental developments in this field.

cond-mat.mes-hall↗

arXiv2015

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

We propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional $s$-wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance will be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between $e^2/2h$ and $e^2/h$ with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.

cond-mat.supr-con↗

arXiv2015

Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state

Topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e^2/2h$. Here we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of topological insulator film increases. We further propose a device setup to eliminate the non-topological contributions from the side surface.

cond-mat.mes-hall↗

arXiv2015

Helical Spin Order from Topological Dirac and Weyl Semimetals

We study dynamical mass generation and the resultant helical spin orders in topological Dirac and Weyl semimetals, including the edge states of quantum spin Hall insulators, the surface states of weak topological insulators, and the bulk materials of Weyl semimetals. In particular, the helical spin textures of Weyl semimetals manifest the spin-momentum locking of Weyl fermions in a visible manner. The spin-wave fluctuations of the helical order carry electric charge density; therefore, the spin textures can be electrically controlled in a simple and predictable manner.

cond-mat.str-el↗

arXiv2015

Large-Gap Quantum Spin Hall States in Stanene Grown on Substrate

Two-dimensional stanene is a promising candidate material for realizing room-temperature quantum spin Hall (QSH) effect. Monolayer stanene has recently been fabricated by molecular beam epitaxy, but shows metallic features on Bi$_2$Te$_3$(111) substrate, which motivates us to study the important influence of substrate. Based on first-principles calculations, we find that varying substrate conditions considerably tunes electronic properties of stanene. The supported stanene gives either trivial or QSH states, with significant Rashba splitting induced by inversion asymmetry. More importantly, large-gap (up to 0.3 eV) QSH states are realizable when growing stanene on various substrates, like the anion-terminated (111) surfaces of SrTe, PbTe, BaSe and BaTe. These findings provide significant guidance for future research of stanene and large-gap QSH states.

cond-mat.mtrl-sci↗

arXiv2015

Electrically Tunable Magnetism in Magnetic Topological Insulators

The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating magnetic topological insulators. The decrease of band inversion by the application of electric fields results in a reduction of magnetic susceptibility, and hence in the modification of magnetism. Remarkably, the electric field could even induce the magnetic quantum phase transition from ferromagnetism to paramagnetism. We further propose a topological transistor device in which the dissipationless charge transport of chiral edge states is controlled by an electric field. In particular, the field-controlled ferromagnetism in magnetic topological insulator can be used for voltage based writing of magnetic random access memories in magnetic tunnel junctions. The simultaneous electrical control of magnetic order and chiral edge transport in such devices may lead to electronic and spintronic applications for topological insulators.

cond-mat.mes-hall↗

arXiv2015

Quantum anomalous Hall effect in magnetic topological insulators

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimension (2D) and three-dimension (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We present the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. We discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.

cond-mat.mes-hall↗

arXiv2015

Epitaxial Growth of Two-Dimensional Stanene

Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2. Ge-based germanene was realized by mechanical exfoliation3. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations4, or can support enhanced thermoelectric performance5, topological superconductivity6 and the near-room-temperature quantum anomalous Hall (QAH) effect7. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene.

cond-mat.mtrl-sci↗

arXiv2015

Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction

The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate a linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field induced by gating in black phosphorus transistors can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the efficiency and performance for linear dichroism photodetection. This provides new functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications.

cond-mat.mes-hall↗

arXiv2015

Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction under broken time reversal symmetry (TRS). Here we first establish a rigorous framework for understanding the magnetic field dependence of electrostatically gated QSH devices. We then report unexpected edge conduction under broken TRS, using a unique cryogenic microwave impedance microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure. At zero magnetic field and low carrier densities, clear edge conduction is observed in the local conductivity profile of this device but not in the 5.5 nm control device whose band structure is trivial. Surprisingly, the edge conduction in the 7.5 nm device persists up to 9 T with little effect from the magnetic field. This indicates physics beyond simple QSH models, possibly associated with material- specific properties, other symmetry protection and/or electron-electron interactions.

cond-mat.mes-hall↗

arXiv2015

Unified Topological Response Theory for Gapped and Gapless Free Fermions

We derive a scheme for systematically enumerating the responses of gapped as well as gapless systems of free fermions to electromagnetic and strain fields starting from a common parent theory. Using the fact that position operators in the lowest Landau level of a quantum Hall state are canonically conjugate, we consider a massive Dirac fermion in $2n$ spatial dimensions under $n$ mutually orthogonal magnetic fields and reinterpret physical space in the resulting zeroth Landau level as phase space in $n$ spatial dimensions. The bulk topological responses of the parent Dirac fermion, given by a Chern-Simons theory, translate into quantized insulator responses, while its edge anomalies characterize the response of gapless systems. Moreover, various physically different responses are seen to be related by the interchange of position and momentum variables. We derive many well-known responses, and demonstrate the utility of our theory by predicting spectral flow along dislocations in Weyl semimetals.

cond-mat.mes-hall↗

arXiv2015

Observation of the zero Hall plateau in a quantum anomalous Hall insulator

Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has been discovered experimentally in an ultrathin film of the Bi2Te3 family TI with spontaneous ferromagnetic (FM) order. An important question concerning the QAH state is whether it is simply a zero-magnetic-field version of the quantum Hall (QH) effect, or if there is new physics beyond the conventional paradigm. Here we report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a QAH insulator caused by magnetization reversal. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity, consistent with a recent theoretical prediction. The features of the zero Hall plateau are shown to be closely related to that of the QAH effect, but its temperature evolution exhibits quantitative differences from the network model for conventional QH plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a QAH insulator, are responsible for the zero Hall plateau. The rich magnetic domain dynamics makes the QAH effect a distinctive class of quantum phenomenon that may find novel applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2015

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices.

cond-mat.mtrl-sci↗

arXiv2015

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism.Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013+-0.00007h/e2 (~3.35+-1.76 ohm), Hall conductance reaching 0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004degree at T=25mK. Further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field (Hc>1.0T) and a relative high Curie temperature. This realization of robust QAH state in hard FMTIs is a major step towards dissipationless electronic applications without external fields.

cond-mat.mtrl-sci↗

arXiv2014

Quantum Anomalous Hall Effect in Magnetic Insulator Heterostructure

Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a non-zero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3/GdI2 superlattice.

cond-mat.mes-hall↗

arXiv2014

Spin Liquid Condensate of Spinful Bosons

We introduce the concept of a bosonic spin liquid condensate (SLC), where spinful bosons in a lattice form a zero-temperature spin disordered charge condensate that preserves the spin rotation symmetry, but breaks the U(1) symmetry due to a spinless order parameter with charge one. It has an energy gap to all the spin excitations. We show that such SLC states can be realized in a system of spin $S\ge 2$ bosons. In particular, we analyze the SLC phase diagram in the spin 2 case using a mean-field variational wave function method. We show there is a direct analogy between the SLC and the resonating-valence-bond (RVB) state.

cond-mat.quant-gas↗

arXiv2014

Two-dimensional time-reversal-invariant topological superconductivity in a doped quantum spin Hall insulator

Time-reversal-invariant topological superconductors have a full paring gap in the bulk and gapless Majorana states at the edge or on the surface. Here, we theoretically propose topological superconductivity in a doped quantum spin Hall insulator. We study the pairing symmetry of doped Sn$X$ film within a two-orbital model, and show that it realizes a topological superconductor when the intraorbital attractive interaction is stronger than the interorbital interaction, which is generic for a doped quantum spin Hall insulator with strong spin-orbit coupling. Edge channels are studied in a tight-binding model numerically. Finally, we discuss the possible topological superconductivity in Sn$X$ film by comparing to $3d$ superconductivity in bulk Sn.

cond-mat.supr-con↗