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arXiv · 1409.4729

Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction

Hongtao Yuan·Xiaoge Liu·Farzaneh Afshinmanesh·Wei Li·Gang Xu·Jie Sun·Biao Lian·Guojun Ye·Yasuyuki Hikita·Zhixun Shen·Shou-Cheng Zhang·Xianhui Chen·Mark Brongersma·Harold Y. Hwang·Yi Cui
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Abstract

The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate a linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field induced by gating in black phosphorus transistors can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the efficiency and performance for linear dichroism photodetection. This provides new functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications.

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Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh, Wei Li, Gang Xu, Jie Sun, Biao Lian, Guojun Ye, Yasuyuki Hikita, Zhixun Shen, Shou-Cheng Zhang, Xianhui Chen, Mark Brongersma, Harold Y. Hwang, Yi Cui. 2015-06-03. Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction. https://doi.org/10.1038/nnano.2015.112

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