arXiv subjects

Stefano Roddaro

Publications and source records attributed to Stefano Roddaro.

At least 37 records · Page 2Linked to original sources

arXiv2020

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.

cond-mat.mes-hall↗

arXiv2019

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuated polymeric micrometric artificial muscles (MAMs), which we implement onto monolithic synthetic WS2/graphene heterostructures. We show that MAMs are able to induce an in-plane stress to the top WS2 layer of the van der Waals heterostructure and that the latter can slide on the graphene underneath with negligible friction. As a proof of concept for the local strain-induced PL shift experiments, we exploit a two-MAM configuration in order to apply uniaxial tensile stress on well-defined micrometric regions of WS2. Remarkably, our architecture does not require the adoption of fragile suspended microstructures. We observe a spatial modulation of the excitonic PL energy of the WS2 monolayers under stress, which agrees with the expected strain profile and attains a maximum redshift of about 40 meV at the maximum strain intensity point. After the actuation, a time-dependent PL blueshift is observed in agreement with the viscoelastic properties of the polymeric MAMs. Our approach enables inducing local and arbitrary deformation profiles and circumvents some key limitations and technical challenges of alternative strain engineering methods requiring the 2D material transfer and production of suspended membranes.

cond-mat.mes-hall↗

arXiv2019

Investigation of InAs based devices for topological applications

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude.

cond-mat.mes-hall↗

arXiv2019

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit.

cond-mat.mes-hall↗

arXiv2018

Vectorial control of the spin-orbit interaction in suspended InAs nanowires

Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the non-trivial evolution of weak anti-localization (WAL) is tracked through all 3D space, and both the spin-orbit length $l_{SO}$ and coherence length $l_φ$ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for in the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors.

cond-mat.mes-hall↗

arXiv2018

Gate-tunable spatial modulation of localized plasmon resonances

Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting and semimetallic materials since these add the exciting possibility of realizing electrically tunable and/or active nanoplasmonic devices. Here we demonstrate that a suitable design of the doping profile in a semiconductor nanowire (NW) can be used to tailor the plasmonic response and induce localization effects akin to those observed in metal nanoparticles. Moreover, by field-effect carrier modulation, we demonstrate that these localized plasmon resonances can be spatially displaced along the nanostructure body, thereby paving the way for the implementation of spatially tunable plasmonic circuits.

cond-mat.mes-hall↗

arXiv2018

Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate

We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy (EDS).

cond-mat.mtrl-sci↗

arXiv2017

Stretching graphene using polymeric micro-muscles

The control of strain in two-dimensional materials opens exciting perspectives for the engineering of their electronic properties. While this expectation has been validated by artificial-lattice studies, it remains elusive in the case of atomic lattices. Remarkable results were obtained on nanobubbles and nano-wrinkles, or using scanning probes; microscale strain devices were implemented exploiting deformable substrates or external loads. These devices lack, however, the flexibility required to fully control and investigate arbitrary strain profiles. Here, we demonstrate a novel approach making it possible to induce strain in graphene using polymeric micrometric artificial muscles (MAMs) that contract in a controllable and reversible way under an electronic stimulus. Our method exploits the mechanical response of poly-methyl-methacrylate (PMMA) to electron-beam irradiation. Inhomogeneous anisotropic strain and out-of-plane deformation are demonstrated and studied by Raman, scanning-electron and atomic-force microscopy. These can all be easily combined with the present device architecture. The flexibility of the present method opens new opportunities for the investigation of strain and nanomechanics in two-dimensional materials.

cond-mat.mes-hall↗

arXiv2017

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target substrate of choice. We confirm the high crystal quality of this material using various characterisation techniques, including optical and scanning electron microscopy as well as Raman spectroscopy. By performing field effect and quantum Hall effect measurements we demonstrate that the electronic properties of such single-crystals are comparable to those of ideal mechanically exfoliated flakes of graphene. Several applications of this high-quality material are also reviewed.

cond-mat.mtrl-sci↗

arXiv2016

InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration

We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.

cond-mat.mes-hall↗

arXiv2016

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts

Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact.

cond-mat.mes-hall↗

arXiv2016

Anisotropic straining of graphene using micropatterned SiN membranes

We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $ΔP$ over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$ we observe is estimated to be $\approx0.7\%$ for $ΔP = 1\,{\rm bar}$ in graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm μm}$. In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$ which is in good agreement with the calculated anisotropy $Δ\varepsilon \approx 0.6\%$ for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

cond-mat.mtrl-sci↗

arXiv2016

Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis

We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of Josephson junctions based on High-Temperature Superconductors is discussed.

cond-mat.supr-con↗

arXiv2016

Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point.

cond-mat.mes-hall↗

arXiv2015

Nanoscale spin rectifiers controlled by the Stark effect

The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date, however, spin operations in DQDs were observed at sub-Kelvin temperatures, a key reason being that scaling a DQD system while retaining an independent field-effect control on the individual dots is very challenging. Here we show that quantum-confined Stark effect allows an independent addressing of two dots only 5 nm apart with no need for aligned nanometer-size local gating. We thus demonstrate a scalable method to fully control a DQD device, regardless of its physical size. In the present implementation we show InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to 10 K. We also report and discuss an unexpected re-entrant SB lifting as a function magnetic-field intensity.

cond-mat.mes-hall↗

arXiv2015

Nanoscale Mach-Zehnder interferometer with spin-resolved quantum Hall edge states

We realize a nanoscale-area Mach-Zehnder interferometer with co-propagating quantum Hall spin-resolved edge states and demonstrate the persistence of gate-controlled quantum interference oscillations, as a function of an applied magnetic field, at relatively large temperatures. Arrays of top-gate magnetic nanofingers are used to induce a resonant charge transfer between the pair of spin-resolved edge states. To account for the pattern of oscillations measured as a function of magnetic field and gate voltage, we have developed a simple theoretical model which satisfactorily reproduces the data.

cond-mat.mes-hall↗

arXiv2014

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.

cond-mat.mes-hall↗

arXiv2014

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.

cond-mat.mes-hall↗