arXiv subjects

Stuart S. P. Parkin

Publications and source records attributed to Stuart S. P. Parkin.

At least 109 records · Page 6Linked to original sources

arXiv2016

Large anomalous Hall effect driven by non-vanishing Berry curvature in non-collinear antiferromagnetic Mn3Ge

It is well established that the anomalous Hall effect that a ferromagnet displays scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. Here we show that the non-collinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is 500 per ohm per cm at 2 K and 50 per ohm per cm at room temperature. The angular dependence of the anomalous Hall effect measurements confirm that the small residual in-plane magnetic moment has no role in the observed effect. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a non-vanishing Berry curvature that arises from the chiral spin structure, and which also results in a large spin Hall effect, comparable to that of platinum. The present results pave the way to realize room temperature antiferromagnetic spintronics and spin Hall effect based data storage devices.

cond-mat.str-el↗

arXiv2016

Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films

The Gilbert damping of ferromagnetic materials is arguably the most important but least understood phenomenological parameter that dictates real-time magnetization dynamics. Understanding the physical origin of the Gilbert damping is highly relevant to developing future fast switching spintronics devices such as magnetic sensors and magnetic random access memory. Here, we report an experimental study of temperature-dependent Gilbert damping in permalloy (Py) thin films of varying thicknesses by ferromagnetic resonance. From the thickness dependence, two independent contributions to the Gilbert damping are identified, namely bulk damping and surface damping. Of particular interest, bulk damping decreases monotonically as the temperature decreases, while surface damping shows an enhancement peak at the temperature of ~50 K. These results provide an important insight to the physical origin of the Gilbert damping in ultrathin magnetic films.

cond-mat.mtrl-sci↗

arXiv2016

Mesoscopic structural phase progression in photo-excited VO2 revealed by time-resolved x-ray diffraction microscopy

Dynamical phase separation during a solid-solid phase transition poses a challenge for understanding the fundamental processes in correlated materials. Critical information underlying a phase transition, such as localized phase competition, is difficult to reveal by measurements that are spatially averaged over many phase separated regions. The ability to simultaneously track the spatial and temporal evolution of such systems is essential to understanding mesoscopic processes during a phase transition. Using state-of-the-art time-resolved hard x-ray diffraction microscopy, we directly visualize the structural phase progression in a VO2 film upon photoexcitation. Following a homogenous in-plane optical excitation, the phase transformation is initiated at discrete sites and completed by the growth of one lattice structure into the other, instead of a simultaneous isotropic lattice symmetry change. The time-dependent x-ray diffraction spatial maps show that the in-plane phase progression in laser-superheated VO2 is via a displacive lattice transformation as a result of relaxation from an excited monoclinic phase into a rutile phase. The speed of the phase front progression is quantitatively measured, and is faster than the process driven by in-plane thermal diffusion but slower than the sound speed in VO2. The direct visualization of localized structural changes in the time domain opens a new avenue to study mesoscopic processes in driven systems.

cond-mat.mes-hall↗

arXiv2016

Facet-dependent giant spin orbit torque in single crystalline antiferromagnetic Ir-Mn / ferromagnetic permalloy bilayers

There has been considerable interest in spin-orbit torques for the purpose of manipulating the magnetization of ferromagnetic (FM) films or nano-elements for spintronic technologies. Spin-orbit torques are derived from spin currents created from charge currents in materials with significant spin-orbit coupling that diffuse into an adjacent FM material. There have been intensive efforts to search for candidate materials that exhibit large spin Hall angles, i.e. efficient charge to spin current conversion. Here we report, using spin torque ferromagnetic resonance, the observation of a giant spin Hall angle of up to ~0.35 in (100) oriented single crystalline antiferromagnetic (AF) IrMn3 thin films, coupled to ferromagnetic permalloy layers, and a spin Hall angle that is about three times smaller in (111) oriented films. For the (100) oriented samples we show that the magnitude of the spin Hall angle can be significantly changed by manipulating the populations of the various AF domains through field annealing. Using ab-initio calculations we show that the triangular AF structure of IrMn3 gives rise to a substantial intrinsic spin Hall conductivity that is three times larger for the (100) than for the (111) orientations, consistent with our experimental findings.

cond-mat.mtrl-sci↗

arXiv2015

Determination of intrinsic damping of perpendicularly magnetized ultrathin films from time resolved precessional magnetization measurements

Magnetization dynamics are strongly influenced by damping. An effective damping constant αeff is often determined experimentally from the spectral linewidth of the free induction decay of the magnetization after the system is excited to its non-equilibrium state. Such an αeff, however, reflects both intrinsic damping as well as inhomogeneous broadening. In this paper we compare measurements of the magnetization dynamics in ultrathin non-epitaxial films having perpendicular magnetic anisotropy using two different techniques, time-resolved magneto optical Kerr effect (TRMOKE) and hybrid optical-electrical ferromagnetic resonance (OFMR). By using an external magnetic field that is applied at very small angles to the film plane in the TRMOKE studies, we develop an explicit closed-form analytical expression for the TRMOKE spectral linewidth and show how this can be used to reliably extract the intrinsic Gilbert damping constant. The damping constant determined in this way is in excellent agreement with that determined from the OFMR method on the same samples. Our studies indicate that the asymptotic high-field approach that is often used in the TRMOKE method to distinguish the intrinsic damping from the effective damping may result in significant error, because such high external magnetic fields are required to make this approach valid that they are out of reach. The error becomes larger the lower is the intrinsic damping constant, and thus may account for the anomalously high damping constants that are often reported in TRMOKE studies. In conventional ferromagnetic resonance (FMR) studies, inhomogeneous contributions can be readily distinguished from intrinsic damping contributions from the magnetic field dependence of the FMR linewidth. Using the analogous approach, we show how reliable values of the intrinsic damping can be extracted from TRMOKE.

cond-mat.mes-hall↗

arXiv2015

Strength of the symmetry spin filtering effect in magnetic tunnel junctions

Strength of the the symmetry spin filtering effect (as defined by the asymptotic behavior of the tunneling magnetoresistance (TMR) at large barrier thicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Based on the analysis of the band structure of bulk Fe and complex band structure of MgO we predict \emph{native} for the symmetry spin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ with increasing number of MgO layers, $N$. \emph{Ab initio} calculations of transmission functions performed for the Fe/MgO/Fe MTJ confirm our theoretical predictions for the strength of the symmetry spin filtering effect in broad range of energies and $N$. Our calculations also show that the \emph{combination} of the symmetry spin filtering effect and small surface transmission function in minority spin channel at the Fe/MgO interface is responsible for large $TMR>10,000\%$ predicted for Fe/MgO/Fe MTJ for $N \geqslant 8$. Proposed analysis of the strength of the symmetry filtering effect derived from the band structure of bulk electrode material could serve as a tool for quick material discovery search of suitable electrodes in context of emerging technologies that require high TMR.

cond-mat.mtrl-sci↗

arXiv2015

Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS

Materials harboring exotic quasiparticles, such as Dirac and Weyl fermions\cite{xu2015discovery,borisenko2015time,weng2015weyl,xu2015observation}, have garnered much attention from the physics and material science communities. These fermions are massless and, in some materials, have shown exceptional physical properties such as ultrahigh mobility and extremely large magnetoresistances \cite{liang2015ultrahigh,ali2014large,du2015unsaturated,shekhar2015large}. Recently, new materials have been predicted to exist which exhibit line nodes of Dirac cones \cite{PhysRevLett.115.036806,xie2015new,burkov2011topological,rhim2015landau}. Here, we show with angle resolved photoemission studies supported by \textit{ab initio} calculations that the highly stable, non-toxic and earth-abundant material, ZrSiS, has an electronic band structure that hosts several Dirac cones which form a Fermi surface with a diamond-shaped line of Dirac nodes. We also experimentally show, for the first time, that the square Si lattice in ZrSiS is an excellent template for realizing the new types of 2D Dirac cones recently predicted by Young and Kane \cite{young2015dirac} and image an unforseen surface state that arises close to the 2D Dirac cone. Finally, we find that the energy range of the linearly dispersed bands is as high as 2\,eV above and below the Fermi level; much larger than of any known Dirac material so far. This makes ZrSiS a very promising candidate to study the exotic behavior of Dirac electrons, or Weyl fermions if a magnetic field is applied, as well as the properties of lines of Dirac nodes

cond-mat.mtrl-sci↗

arXiv2015

Giant thermal spin torque assisted magnetic tunnel junction switching

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal spin torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

cond-mat.mes-hall↗

arXiv2015

Role of transparency of platinum-ferromagnet interface in determining intrinsic magnitude of spin Hall effect

The spin Hall effect (SHE) converts charge current to pure spin currents in orthogonal directions in materials that have significant spin-orbit coupling.The efficiency of the conversion is described by the spin Hall Angle (SHA). The SHA can most readily be inferred by using the generated spin currents to excite or rotate the magnetization of ferromagnetic films or nano-elements via spin-transfer torques.Some of the largest spin torque derived spin Hall angles (ST-SHA) have been reported in platinum. Here we show, using spin torque ferromagnetic resonance (ST-FMR) measurements, that the transparency of the Pt-ferromagnet interface to the spin current plays a central role in determining the magnitude of the ST-SHA. We measure a much larger ST-SHA in Pt/cobalt (~0.11) compared to Pt/permalloy (~0.05) bilayers when the interfaces are assumed to be completely transparent. Taking into account the transparency of these interfaces, as derived from spin-mixing conductances, we find that the intrinsic SHA in platinum has a much higher value of 0.19 +- 0.04 as compared to the ST-SHA. The importance of the interface transparency is further exemplified by the insertion of atomically thin magnetic layers at the Pt/permalloy interface that we show strongly modulates the magnitude of the ST-SHA.

cond-mat.mes-hall↗

arXiv2015

Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction

The 'Brillouin zone spin filtering' mechanism of enhanced tunneling magnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) and studied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h-BN) spacer. Our calculations based on local density approximation of density functional theory (LDA-DFT) for Co(0001)/h-BN/Co(0001) MTJ predict high TMR in this device due to Brillouin zone filtering mechanism. Owning to the specific complex band structure of the h-BN the spin-dependent tunneling conductance of the system is ultra-sensitive to small variations of the Fermi energy position inside the BN band gap. Doping of the BN and, consequentially, changing the Fermi energy position could lead to variation of the TMR by several orders of magnitude. We show also that taking into account correlation effects on beyond DFT level is required to accurately describe position of the Fermi level and thus transport propertied of the system. Our study suggests that new MTJ based on hcp Co-Pt or Co-Pd disordered alloy electrodes and p-doped hexagonal BN spacer is a promising candidate for the spin-transfer torque magnetoresistive random-access memory (STT-MRAM).

cond-mat.mtrl-sci↗

arXiv2014

Extreme Ultraviolet Transient Grating Spectroscopy of Vanadium Dioxide

Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO2 film with EUV diffraction from the optically excited sample. The VO2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

physics.optics↗

arXiv2013

Domain wall trajectory determined by its fractional topological edge defects

A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW. Here we show how we can understand and control the trajectory of DWs in magnetic branched networks, composed of connected nanowires, by considering their fractional elementary topological defects and how they interact with those innate to the network. We first develop a highly reliable mechanism for the injection of a DW of a given chirality into a nanowire and show that its chirality determines which branch the DW follows at a symmetric Y-shaped magnetic junction - the fundamental building block of the network. Using these concepts, we unravel the origin of the one-dimensional nature of magnetization reversal of connected artificial spin ice systems that have been observed in the form of Dirac strings.

cond-mat.mes-hall↗

arXiv2013

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature dependence. This behavior and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/STO interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

cond-mat.mtrl-sci↗

arXiv2013

Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films

In this work we are investigating the effect of strain in ultrathin Mn-Ga thin films on the magnetic properties at room temperature. Two different Mn-Ga compositions of which one is furthermore doped with Co were grown on Cr buffered MgO (001) substrates. Films with a thickness below 12nm are highly strained and it was observed that the ratio c/a vs. thickness is depending on composition. Using c/a as an order parameter the PMA is shown to be drastically reduced with increasing strain. These findings should be considered when generalizing and downscaling results obtained from films >20nm. Furthermore it has been shown, that the strain can be reduced by introducing an additional Pt buffer and thus maintaining a high PMA for a thickness as low as 6nm.

cond-mat.mtrl-sci↗

arXiv2013

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ~1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for Spintronics applications including magnetic tunnel junctions and domain wall devices.

cond-mat.mtrl-sci↗

arXiv2012

First-principles study of the structural stability of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds

We investigate the structural stability and magnetic properties of cubic, tetragonal and hexagonal phases of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds using first-principles density-functional theory. We propose that the cubic phase plays an important role as an intermediate state in the phase transition from the hexagonal to the tetragonal phases. Consequently, Mn3Ga and Mn3Ge behave differently from Mn3Sn, because the relative energies of the cubic and hexagonal phases are different. This result agrees with experimental observations from these three compounds. The weak ferromagnetism of the hexagonal phase and the perpendicular magnetocrystalline anisotropy of the tetragonal phase obtained in our calculations are also consistent with experiment.

cond-mat.mtrl-sci↗

arXiv2012

A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k and a narrow indirect band gap of width 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard X-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.

cond-mat.mtrl-sci↗

arXiv2012

Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)

Thin films of the proposed topological insulator PdLuBi - a Heusler compound with the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-quality PdLuBi films was confirmed by X-ray spectrometry and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, although the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the PdLuBi films, observed by hard X-ray photoelectron spectroscopy, correspond perfectly to the ab-initio-calculated density of states.

cond-mat.mtrl-sci↗